Datasheet

SSF8205A
DESCRIPTION
D1
The SSF8205A uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 0.65V. This device is
suitable for use as a Battery protection or in other
Switching application.
D2
G1
G2
S1
S2
● VDS = 20V,ID = 6A
RDS(ON) < 37.5mΩ @ VGS=2.5V
RDS(ON) < 27.5mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
D1
S1
S1
G1
4 3 2 1
GENERAL FEATURES
5 6 7 8
Schematic diagram
8205A
D2
S2
S2
G2
Marking and pin Assignment
Application
●Battery protection
●Load switch
●Power management
TSSOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
8205A
SSF8205A
TSSOP-8
Ø330mm
12mm
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
Unit
20
V
±10
V
6
A
25
A
1.5
W
-55 To 150
℃
83
℃/W
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
VGS=0V ID=250μA
BVDSS
20
V
Zero Gate Voltage Drain Current
IDSS
VDS=18V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±10V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
0.65
1.2
V
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=4.5A
21
27.5
mΩ
VGS=2.5V, ID=3.5A
30
37.5
mΩ
ON CHARACTERISTICS (Note 3)
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SSF8205A
Forward Transconductance
gFS
VDS=5V,ID=4.5A
10
S
600
PF
330
PF
PF
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
140
Turn-on Delay Time
td(on)
10
20
nS
Turn-on Rise Time
tr
11
25
nS
35
70
nS
30
60
nS
10
15
nC
VDS=8V,VGS=0V,
F=1.0MHz
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
VDD=10V,ID=1A
VGS=4.5V,RGEN=6Ω
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=10V,ID=6A,
VGS=4.5V
2.3
nC
3
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
Diode Forward Current (Note 2)
IS
VGS=0V,IS=1.7A
0.72
1.2
V
1.7
A
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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SSF8205A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
V dd
V gs
R gen
D
VOUT
V out
toff
tf
td(off)
90%
Rl
V in
ton
tr
td(on)
90%
INVERTED
10%
10%
G
90%
VIN
S
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
PD Power(W)
ID- Drain Current (A)
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
ID- Drain Current (A)
Rdson On-Resistance(mΩ )
Figure 4 Drain Current
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
©Silikron Semiconductor CO.,LTD.
Figure 6 Drain-Source On-Resistance
3
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ID- Drain Current (A)
Normalized On-Resistance
SSF8205A
TJ-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(mΩ )
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Is- Reverse Drain Current (A)
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
©Silikron Semiconductor CO.,LTD.
Figure 12 Source- Drain Diode Forward
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ID- Drain Current (A)
SSF8205A
Vds Drain-Source Voltage (V)
Safe Operation Area
r(t),Normalized Effective
Transient Thermal Impedance
Figure 13
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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SSF8205A
TSSOP-8 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
NOTES:
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
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SSF8205A
ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
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This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.
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