Datasheet

SSF8822
D1
DESCRIPTION
The SSF8822 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 0.8V. This device is suitable
for use as a uni-directional or bi-directional load switch,
facilitated by its common-drain configuration.
D2
G1
G2
S1
S2
Marking and pin Assignment
GENERAL FEATURES
● VDS = 20V,ID = 7A
RDS(ON) < 21mΩ @ VGS=10V
RDS(ON) < 24mΩ @ VGS=4.5V
RDS(ON) < 28mΩ @ VGS=3.6V
RDS(ON) < 32mΩ @ VGS=2.5V
RDS(ON) < 50mΩ @ VGS=1.8V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Schematic diagram
Application
●Battery protection
●Load switch
●Power management
TSSOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
SSF8822
SSF8822
TSSOP-8
Ø330mm
12mm
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
ID
7
A
IDM
30
A
PD
1.5
W
TJ,TSTG
-55 To 150
℃
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
℃/W
83
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=16V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±10V,VDS=0V
±100
nA
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SSF8822
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VGS(th)
VDS=VGS,ID=1mA
RDS(ON)
gFS
0.5
0.8
1
V
VGS=10V, ID=7A
16.4
21
VGS=4.5V, ID=6.6A
19
24
VGS=3.6V, ID=6A
21.7
28
VGS=2.5V, ID=5.5A
25
32
VGS=1.8V, ID=2A
36
50
VDS=5V,ID=7A
24
S
630
PF
160
PF
mΩ
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=10V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
135
PF
Turn-on Delay Time
td(on)
5.7
nS
Turn-on Rise Time
tr
11.5
nS
31.5
nS
9.7
nS
9.3
nC
0.6
nC
3.6
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
VDS=10V, RL=1.4Ω
VGS=5V,RGEN=3Ω
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
VDS=10V,ID=7A,
VGS=4.5V
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Body Diode Reverse Recovery Time
trr
IF=7A, dI/dt=100A/µs
15.2
nS
Body Diode Reverse Recovery Charge
Qrr
IF=7A, dI/dt=100A/µs
6.3
nC
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1A
0.7
Diode Forward Current (Note 2)
IS
DRAIN-SOURCE DIODE CHARACTERISTICS
1
V
2.5
A
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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SSF8822
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
V dd
td(on)
Rl
V in
V gs
R gen
toff
tf
td(off)
D
90%
V out
VOUT
G
90%
INVERTED
10%
10%
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
Figure 1:Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedance
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SSF8822
TSSOP-8 PACKAGE INFORMATION
NOTES:
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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SSF8822
ATTENTION:
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