Datasheet

SSF8421
GENERAL FEATURES
●N-Channel
VDS = 20V,ID = 4.5A
RDS(ON) < 40mΩ @ VGS=2.5V
RDS(ON) < 30mΩ @ VGS=4.5V
Schematic diagram
●P-Channel
VDS = -20V,ID = -3.5A
RDS(ON) < 85mΩ @ VGS=-2.5V
RDS(ON) < 50mΩ @ VGS=-4.5V
Marking and pin Assignment
●High Power and current handing capability
●Lead free product is acquired
●Surface Mount Package
TSSOP-8
top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
8421
SSF8421
TSSOP-8
Ø330mm
12mm
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
20
-20
V
Gate-Source Voltage
VGS
±12
±12
V
Drain [email protected]
(Note 1)
ID
4.5
-3.5
A
IDM
30
-30
A
Maximum Power Dissipation
PD
1.0
1.0
W
TJ,TSTG
-55 To 150
-55 To 150
℃
N-Ch
83
P-Ch
100
Operating Junction and Storage Temperature
Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note2)
RθJA
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
©Silikron Semiconductor CO.,LTD
2008.12.1
Version : 1.0
page 1 of 4
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SSF8421
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
VGS=0V ID=250μA
N-Ch
20
VGS=0V ID=-250μA
P-Ch
-20
VDS=20V,VGS=0V
N-Ch
1
VDS=-20V,VGS=0V
P-Ch
-1
N-Ch
±100
P-Ch
±100
VGS=±12V,VDS=0V
V
μA
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
N-Ch
0.6
VDS=VGS,ID=-250μA
P-Ch
-0.6
VGS=4.5V, ID=4.5A
N-Ch
23
30
VGS=-4.5V, ID=-3.5A
P-Ch
40
50
VGS=2.5V, ID=3.9A
N-Ch
30
40
VGS=-2.5V, ID=-2.7A
P-Ch
60
85
VDS=10V,ID=4.5A
N-Ch
20
VDS=-10V,ID=-3.5A
P-Ch
10
N-Ch
22
50
P-Ch
27
50
N-Ch
40
80
P-Ch
30
60
N-Ch
50
100
P-Ch
55
100
N-Ch
20
40
P-Ch
21
40
N-Ch
10
20
P-Ch
14
25
N-Ch
2.5
P-Ch
3.5
N-Ch
3.0
P-Ch
3.5
V
mΩ
S
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
©Silikron Semiconductor CO.,LTD
Qgd
2008.12.1
N-Ch
VDD=10 V,ID=1A
VGEN=10V,RGEN=6Ω
P-Ch
VDD=-10V,ID=-1A
VGEN=-10V,RGEN=6Ω
N-Ch
VDS=15V,ID=4.5A,VGS=4.5V
P-Ch
VDS=-15V,ID=-4.5A,VGS=-3.5V
Version : 1.0
nS
nS
nS
nS
nC
nC
nC
page 2 of 4
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SSF8421
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1.25A
N-Ch
1.2
V
VGS=0V,IS=-1.25A
P-Ch
-1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
r(t),Normalized Effective
Transient Thermal Impedance
N-Channel THERMAL CHARACTERISTICS
Square Wave Pluse Duration(sec)
Figure 1: Normalized Maximum Transient Thermal Impedance
r(t),Normalized Effective
Transient Thermal Impedance
P-Channel THERMAL CHARACTERISTICS
Square Wave Pluse Duration(sec)
Figure 2: Normalized Maximum Transient Thermal Impedance
©Silikron Semiconductor CO.,LTD
2008.12.1
Version : 1.0
page 3 of 4
A Good-Ark Company
SSF8421
TSSOP-8 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
NOTES:
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD
2008.12.1
Version : 1.0
page 4 of 4
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