Datasheet

SSF2429
DESCRIPTION
D
The SSF2429 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V.
G
GENERAL FEATURES
S
● VDS = -20V,ID =-5A
RDS(ON) < 35mΩ @ VGS=-4.5V
RDS(ON) < 48mΩ @ VGS=-2.5V
Schematic diagram
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●Battery protection
●Load switch
●Power management
SOT23-6 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
2429
SSF2429
SOT23-6
Ø180mm
8mm
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±12
V
ID
-5
A
IDM
-20
A
PD
1.4
W
TJ,TSTG
-55 To 150
℃
RθJA
90
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
©Silikron Semiconductor CO.,LTD.
BVDSS
VGS=0V ID=-250μA
1
-20
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V
v1.0
SSF2429
Zero Gate Voltage Drain Current
IDSS
VDS=-20V,VGS=0V
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±12V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-0.7
-1
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-4.5V, ID=-5A
29
35
mΩ
VGS=-2.5V, ID=-3A
37
48
mΩ
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
VDS=-10V,ID=-3A
-0.5
4
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=-10V,VGS=0V,
F=1.0MHz
1450
PF
200
PF
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
160
PF
Turn-on Delay Time
td(on)
5
nS
Turn-on Rise Time
tr
13
nS
80
nS
35
nS
17
nC
4
nC
4.5
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
VDD=-10V,ID=-1A
VGS=-4.5V,RGEN=6Ω
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=-10V,ID=-4.5A,
VGS=-5V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-1.3A
-1.3
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
©Silikron Semiconductor CO.,LTD.
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SSF2429
ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Rl
Vin
Vgs
Rgen
D
ton
tr
td(on)
td(off)
90%
Vout
toff
tf
VOUT
90%
INVERTED
10%
10%
G
90%
VIN
S
50%
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
R(t),Normalized Effective
Transient Thermal Impedance
Figure 2:Switching Waveforms
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedance
©Silikron Semiconductor CO.,LTD.
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SSF2429
SOT23-6 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
NOTES:
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
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SSF2429
ATTENTION:
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extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can
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