Datasheet

SSF2418EB
DESCRIPTION
The SSF2418EB uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 0.5V. This
device is suitable for use as a load switch. It is ESD
protected.
GENERAL FEATURES
Schematic diagram
● VDS = 20V,ID =6A
RDS(ON) < 30mΩ @ VGS=2.5V
RDS(ON) < 26mΩ @ VGS=3.1V
RDS(ON) < 22mΩ @ VGS=4.0V
RDS(ON) < 21mΩ @ VGS=4.5V
ESD Rating:2500V HBM
Marking and pin Assignment
● High Power and current handling capability
● Lead free product is acquired
● Surface Mount Package
Application
●Battery protection
●Load switch
●Power management
SOT23-6
top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
2418EB
SSF2418EB
SOT23-6
Ø330mm
12mm
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
ID
6
A
IDM
30
A
PD
1.3
W
TJ,T STG
-55 To 150
℃
RθJA
95
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
BVDSS
VGS=0V ID=250μA
20
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
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SSF2418EB
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±10V,VDS=0V
±10
uA
VGS(th)
VDS=VGS,ID=250μA
1
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(ON)
gFS
0.5
VGS=4.5V, ID=6A
18
21
mΩ
VGS=4.0V, ID=5.5A
19
22
mΩ
VGS=3.1V, ID=5A
21
26
mΩ
VGS=2.5V, ID=4A
25
30
mΩ
VDS=5V,ID=6A
7
S
650
PF
170
PF
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=10V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
150
PF
Turn-on Delay Time
td(on)
20
nS
Turn-on Rise Time
tr
50
nS
64
nS
40
nS
8
nC
1.5
nC
2
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
VDD=10V,ID=1A
VGS=4.5V,RGEN=10Ω
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=10V,ID=6A,
VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1A
0.76
1.1
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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SSF2418EB
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
V dd
Rl
V in
V gs
R gen
D
V out
G
S
Figure 2:Switching Waveform
r(t),Normalized Effective
Transient Thermal Impedance
Figure 1:Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3 Normalized Maximum Transient Thermal Impedance
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SSF2418EB
SOT23-6 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
NOTES:
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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SSF2418EB
ATTENTION:
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