SSF3416 D DESCRIPTION The SSF3416 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =9A RDS(ON) < 30mΩ @ VGS=4.5V RDS(ON) < 18.5mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOT23-6 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape width Quantity 3416 SSF3416 SOT23-6 Ø180mm 8mm 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V ID（25℃） 9 ID（70℃） 7 IDM 40 A PD 2.5 W TJ,TSTG -55 To 150 ℃ RθJA 62.5 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range A THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage ©Silikron Semiconductor CO.,LTD. BVDSS VGS=0V ID=250μA 1 30 http://www.silikron.com V v1.0 SSF3416 Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.9 3 V Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=7A 21 30 mΩ VGS=10V, ID=9A 16 18.5 mΩ VDS=15V,ID=9A 10 S 600 PF 75 PF ON CHARACTERISTICS (Note 3) Forward Transconductance gFS 1 DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=15V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 45 PF Turn-on Delay Time td(on) 4 nS Turn-on Rise Time tr 12 nS 22 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time td(off) VDS=15V,VGS=10V,RGEN=6Ω ID=1A Turn-Off Fall Time tf 4 nS Total Gate Charge Qg 12 nC Gate-Source Charge Qgs 1.2 nC Gate-Drain Charge Qgd 3.8 nC Body Diode Reverse Recovery Time Trr 13 nS Body Diode Reverse Recovery Charge Qrr 7 nC VDS=15V,ID=9A,VGS=10V IF=9A, dI/dt=100A/µs DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=3A 0.7 1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. ©Silikron Semiconductor CO.,LTD. 2 http://www.silikron.com v1.0 SSF3416 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Rl Vin Vgs Rgen D ton tr td(on) Vout 90% VOUT G toff tf td(off) 90% INVERTED 10% 10% 90% VIN S 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 3 Power Dissipation ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 4 Drain Current ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS ©Silikron Semiconductor CO.,LTD. Figure 6 Drain-Source On-Resistance 3 http://www.silikron.com v1.0 ID- Drain Current (A) Normalized On-Resistance SSF3416 TJ-Junction Temperature(℃) Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds Is- Reverse Drain Current (A) Vgs Gate-Source Voltage (V) Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Figure 11 Gate Charge ©Silikron Semiconductor CO.,LTD. Figure 12 Source- Drain Diode Forward 4 http://www.silikron.com v1.0 ID- Drain Current (A) SSF3416 Vds Drain-Source Voltage (V) Safe Operation Area ZthJA Normalized Transient Thermal Resistance Figure 13 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance ©Silikron Semiconductor CO.,LTD. 5 http://www.silikron.com v1.0 SSF3416 SOT23-6 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) NOTES： 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ©Silikron Semiconductor CO.,LTD. 6 http://www.silikron.com v1.0 SSF3416 ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice. ©Silikron Semiconductor CO.,LTD. 7 http://www.silikron.com v1.0