Datasheet

SSF2637E
DESCRIPTION
The SSF2637E uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as -0.5V.
GENERAL FEATURES
● VDS = -20V,ID =-5.4A
RDS(ON) < 52mΩ @ VGS=-2.5V
RDS(ON) < 43mΩ @ VGS=-4.5V
Schematic diagram
ESD Rating:3000V HBM
D
D D
8
7
D
6 5
2637E
4414
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
1
3 4
2
S S S G
Marking and pin Assignment
Application
●Battery protection
●Load switch
●Power management
SOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
2637E
SSF2637E
SOP-8
Reel Size
Tape width
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Quantity
Limit
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±12
V
ID
-5.4
A
IDM
-30
A
PD
1.9
W
TJ,TSTG
-55 To 150
℃
RθJA
40
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
©Silikron Semiconductor CO.,LTD.
BVDSS
VGS=0V ID=-250μA
1
-20
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V
v1.0
SSF2637E
Zero Gate Voltage Drain Current
IDSS
VDS=-16V,VGS=0V
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±8V,VDS=0V
±10
uA
VGS(th)
VDS=VGS,ID=-250μA
-0.55
-1
V
VGS=-4.5V, ID=-4A
37
43
mΩ
VGS=-2.5V, ID=-4A
45
52
mΩ
VGS=-1.8V, ID=-2A
56
73
mΩ
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(ON)
gFS
VDS=-5V,ID=-4A
-0.3
4
8
S
1450
PF
200
PF
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=-10V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
160
PF
Turn-on Delay Time
td(on)
9.5
nS
Turn-on Rise Time
tr
17
nS
90
nS
30
nS
17
nC
1.3
nC
4.5
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
VDD=-10V,ID=-1A
VGS=-4.5V,RGEN=3Ω
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=-10V,ID=-4A,
VGS=-4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-1A
-0.76
-1
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
©Silikron Semiconductor CO.,LTD.
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SSF2637E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Vgs
Rgen
td(on)
Rl
Vin
D
ton
tr
td(off)
Vout
90%
VOUT
G
toff
tf
90%
INVERTED
10%
10%
S
90%
VIN
50%
50%
10%
PULSE WIDTH
Figure 1: Switching Test Circuit
ZthJA Normalized Transient
Thermal Resistance
Figure 2:Switching Waveforms
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedance
©Silikron Semiconductor CO.,LTD.
3
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v1.0
SSF2637E
SOP-8 PACKAGE INFORMATION
NOTES:
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
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v1.0
SSF2637E
ATTENTION:
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©Silikron Semiconductor CO.,LTD.
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