Datasheet

SSF3615
D
DESCRIPTION
The SSF3615 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
G
S
Schematic diagram
GENERAL FEATURES
● VDS =- 30V,ID =-10A
RDS(ON) < 25mΩ @ VGS=-4.5V
RDS(ON) < 14mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
SSF3615
SSF3615
SOP-8
Ø330mm
12mm
2500 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±25
V
ID(25℃)
-8
A
ID(70℃)
-6
A
IDM
-80
A
PD
3.1
W
TJ,TSTG
-55 To 150
℃
RθJA
40
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
©Silikron Semiconductor CO.,LTD.
BVDSS
VGS=0V ID=-250μA
1
-30
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V
v2.1
SSF3615
Zero Gate Voltage Drain Current
IDSS
VDS=-30V,VGS=0V
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±25V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-2.2
-3
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-4.5V, ID=-7.5A
20
25
mΩ
VGS=-10V, ID=-10A
12
14
mΩ
VDS=-5V,ID=-10A
18
S
1200
PF
240
PF
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
-1.7
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=-15V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
150
PF
Turn-on Delay Time
td(on)
9
nS
Turn-on Rise Time
tr
8.5
nS
20
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
td(off)
VDS=-15V,VGS=-10V,RGEN=3Ω
ID=1A
Turn-Off Fall Time
tf
8
nS
Total Gate Charge
Qg
18
nC
Gate-Source Charge
Qgs
5
nC
Gate-Drain Charge
Qgd
3.5
nC
Body Diode Reverse Recovery Time
Trr
24
nS
Body Diode Reverse Recovery Charge
Qrr
12
nC
VDS=-15V,ID=-10A,VGS=-10V
IF=-10A, dI/dt=100A/µs
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-1A
-0.74
-1
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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SSF3615
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
td(on)
toff
tf
td(off)
90%
VOUT
90%
INVERTED
10%
10%
90%
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
PD Power(W)
-ID- Drain Current (A)
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
-ID- Drain Current (A)
Rdson On-Resistance(mΩ)
Figure 4 Drain Current
-ID- Drain Current (A)
-Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
©Silikron Semiconductor CO.,LTD.
Figure 6 Drain-Source On-Resistance
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-ID- Drain Current (A)
Normalized On-Resistance
SSF3615
TJ-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(mΩ)
-Vgs Gate-Source Voltage (V)
-Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
-Is- Reverse Drain Current (A)
-Vgs Gate-Source Voltage (V)
-Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
-Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
©Silikron Semiconductor CO.,LTD.
Figure 12 Source- Drain Diode Forward
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v2.1
-ID- Drain Current (A)
SSF3615
Vds Drain-Source Voltage (V)
Safe Operation Area
ZthJA Normalized Transient
Thermal Resistance
Figure 13
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
©Silikron Semiconductor CO.,LTD.
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SSF3615
SOP-8 PACKAGE INFORMATION
NOTES:
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
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v2.1
SSF3615
ATTENTION:
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