Datasheet

SSF2610E
DESCRIPTION
The SSF2610E uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V.
GENERAL FEATURES
● VDS = 20V,ID = 8A
RDS(ON) < 23mΩ @ VGS=1.8V
RDS(ON) < 18mΩ @ VGS=2.5V
RDS(ON) < 14mΩ @ VGS=4.5V
Schematic diagram
ESD Rating:2000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●Battery protection
●Load switch
●Power management
SOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
SSF2610E
SSF2610E
SOP-8
Ø330mm
12mm
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
ID(25℃)
8
A
ID(70℃)
6.2
A
IDM
25
A
PD
2
W
TJ,TSTG
-55 To 150
℃
RθJA
83
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
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SSF2610E
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
20
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±4.5V,VDS=0V
±100
nA
VGS=±10V,VDS=0V
±10
uA
0.75
1
V
VGS=4.5V, ID=8A
11
14
mΩ
VGS=2.5V, ID=6.5A
14
18
mΩ
VGS=1.8V, ID=6A
20
23
mΩ
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VGS(th)
VDS=VGS,ID=250μA
RDS(ON)
gFS
VDS=10V,ID=6.5A
0.6
5
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=8V,VGS=0V,
F=1.0MHz
600
PF
330
PF
PF
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
140
Turn-on Delay Time
td(on)
10
20
nS
Turn-on Rise Time
tr
11
25
nS
35
70
nS
30
60
nS
10
15
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
VDD=10V,ID=1A
VGS=4.5V,RGEN=6Ω
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=10V,ID=8A,
VGS=4.5V
2.3
nC
3
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1.5A
0.84
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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SSF2610E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Vgs
Rgen
D
VOUT
Vout
toff
tf
td(off)
90%
Rl
Vin
ton
tr
td(on)
90%
INVERTED
10%
10%
G
90%
VIN
S
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 1:Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3 Normalized Maximum Transient Thermal Impedance
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SSF2610E
SOP-8 PACKAGE INFORMATION
NOTES:
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exa
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SSF2610E
ATTENTION:
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