Datasheet

SSF4414
D
DESCRIPTION
The SSF4414 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
G
S
Schematic diagram
GENERAL FEATURES
● VDS = 30V,ID = 8.5A
RDS(ON) < 40mΩ @ VGS=4.5V
RDS(ON) < 26mΩ @ VGS=10V
● High Power and current handling capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
SSF4414
SSF4414
SOP-8
Ø330mm
12mm
2500 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
ID(25℃)
8.5
A
ID(70℃)
7
A
IDM
50
A
PD
3
W
TJ,TSTG
-55 To 150
℃
RθJA
40
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=24V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
±100
nA
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SSF4414
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
Forward Transconductance
gFS
1.9
3
V
VGS=4.5V, ID=5A
31
40
mΩ
VGS=10V, ID=8.5A
20
26
mΩ
VDS=5V,ID=5A
1
4
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
680
VDS=15V,VGS=0V,
F=1.0MHz
820
PF
100
PF
Crss
75
PF
Turn-on Delay Time
td(on)
4.5
6.5
nS
Turn-on Rise Time
tr
4.2
6.3
nS
20
30
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
td(off)
VDS=15V,VGS=10V,RGEN=3Ω
RL=1.8Ω
Turn-Off Fall Time
tf
4.9
7.5
nS
Total Gate Charge
Qg
13.8
17
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Body Diode Reverse Recovery Time
Trr
IF=8.5A, dI/dt=100A/µs
17.2
21
nS
Body Diode Reverse Recovery Charge
Qrr
IF=8.5A, dI/dt=100A/µs
8.6
10
nC
0.76
1
V
VDS=15V,ID=8.5A,VGS=10V
1.8
nC
3.3
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1A
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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SSF4414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Rl
V in
Vgs
Rgen
D
Vout
G
S
Figure 1: Switching Test Circuit
ZthJA Normalized Transient
Thermal Resistance
Figure 2:Switching Waveforms
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedance
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SSF4414
SOP-8 PACKAGE INFORMATION
NOTES:
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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SSF4414
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