Datasheet

SSF4604
DESCRIPTION
The SSF4604 uses advanced trench
technology MOSFET to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFET may be used
in power inverters, and other applications.
P-channel
N-channel
Schematic diagram
GENERAL FEATURES
D1 D1 D2 D2
●N-Channel
8
VDS = 30V,ID = 6.9A
RDS(ON) < 44mΩ @ VGS=4.5V
RDS(ON) < 28mΩ @ VGS=10V
●P-Channel
VDS = -30V,ID = -5A
RDS(ON) < 87mΩ @ VGS=-4.5V
RDS(ON) < 52mΩ @ VGS=-10V
7
6
5
4604
1
2
3
4
S1 G1 S2 G2
Marking and pin Assignment
●High Power and current handing capability
●Lead free product is acquired
●Surface Mount Package
SOP-8
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
4604
SSF4604
SOP-8
Ø330mm
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
top view
Tape width
Quantity
12mm
2500 units
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
30
-30
V
Gate-Source Voltage
VGS
±20
±20
V
6.9
-5
6.0
-4.0
30
-20
2.0
2.0
1.35
1.44
-55 To 150
-55 To 150
N-Ch
62.5
P-Ch
62.5
Continuous Drain Current
TA=25℃
ID
TA=70℃
Pulsed Drain Current (Note 1)
Maximum Power Dissipation
IDM
TA=25℃
PD
TA=70℃
Operating Junction and Storage Temperature Range
TJ,TSTG
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note2)
RθJA
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
©Silikron Semiconductor CO.,LTD.
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Min
Typ
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℃/W
Max
Unit
v1.0
SSF4604
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
VGS=0V ID=250μA
N-Ch
30
VGS=0V ID=-250μA
P-Ch
-30
VDS=24V,VGS=0V
N-Ch
1
VDS=-24V,VGS=0V
P-Ch
-1
N-Ch
±100
P-Ch
±100
VGS=±20V,VDS=0V
V
μA
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
N-Ch
1
1.9
3
VDS=VGS,ID=-250μA
P-Ch
-1
-1.8
-3
VGS=10V, ID=6.9A
N-Ch
22.5
28
VGS=-10V, ID=-5.0A
P-Ch
46
52
VGS=4.5V, ID=5A
N-Ch
40
44
VGS=-4.5V, ID=-4A
P-Ch
65
87
VDS=5V,ID=6.9A
N-Ch
10
15.4
VDS=-5V,ID=-5A
P-Ch
6
8.6
V
mΩ
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Clss
N-Ch
VGS=0V, VDS=15V, f=1MHz
Coss
P-Ch
VGS=0V, VDS=-15V, f=1MHz
Reverse Transfer Capacitance
Crss
N-Ch
680
P-Ch
700
N-Ch
100
P-Ch
120
N-Ch
77
P-Ch
75
N-Ch
4.6
P-Ch
8.3
N-Ch
4.1
P-Ch
5
N-Ch
20.6
P-Ch
29
N-Ch
5.2
P-Ch
14
N-Ch
14
P-Ch
14.5
N-Ch
1.8
P-Ch
2
N-Ch
3.2
P-Ch
3.8
pF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
©Silikron Semiconductor CO.,LTD.
Qgd
N-Ch
VDD=15V, RL=2.2Ω
VGEN=10V,RGEN=3Ω
P-Ch
VDD=-15V, RL=3Ω
VGEN=-10V,RGEN=3Ω
N-Ch
VDS=15V,ID=6.9A,
VGS=10V
P-Ch
VDS=-15V,ID=-5A,
VGS=-10V
2
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nS
nS
nS
nS
nC
nC
nC
v1.0
SSF4604
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1A
N-Ch
0.76
1
V
VGS=0V,IS=-1A
P-Ch
-0.77
-1
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
r(t),Normalized Effective
Transient Thermal Impedance
N-Channel THERMAL CHARACTERISTICS
Square Wave Pluse Duration(sec)
Figure 1: Normalized Maximum Transient Thermal Impedance
r(t),Normalized Effective
Transient Thermal Impedance
P-Channel THERMAL CHARACTERISTICS
Square Wave Pluse Duration(sec)
Figure 2: Normalized Maximum Transient Thermal Impedance
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SSF4604
SOP-8 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
NOTES:
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
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SSF4604
ATTENTION:
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