Datasheet

SSF4703DC
DESCRIPTION
The SSF4703DC uses advanced trench technology
to provide excellent RDS(ON) and low gate charge . A
Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch,
or for DC-DC conversion applications.
GENERAL FEATURES
Schematic diagram
● MOSFET
VDS = -20V,ID = -3.4A
RDS(ON) < 160mΩ @ VGS=-1.8V
RDS(ON) < 120mΩ @ VGS=-2.5V
RDS(ON) < 90mΩ @ VGS=-4.5V
●SCHOTTKY
VR = 20V, IF = 1A, VF<0.5V @ 0.5A
Pin Assignment
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●DC-DC conversion applications
●Load switch
●Power management
DFN3X2-8L Bottom View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
4703DC
SSF4703DC
DFN3X2-8L
-
-
-
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
MOSFET
Schottky
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8
V
ID
-3.4
A
IDM
-15
A
Drain Current-Continuous@ Current-Pulsed (Note 1)
Schottky reverse voltage
VR
20
V
Continuous Forward Current
IF
1.9
A
Pulsed Forward Current
IFM
7
A
Maximum Power Dissipation
PD
1.7
0.96
W
TJ,TSTG
-55 To 150
-55 To 150
℃
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
MOSFET
Thermal Resistance, Junction-to-Ambient (Note 2)
©Silikron Semiconductor CO.,LTD.
RθJA
1
75
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℃/W
v2.0
SSF4703DC
Schottky
Thermal Resistance, Junction-to-Ambient (Note 2)
RθJA
80
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
℃/W
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-20
V
Zero Gate Voltage Drain Current
IDSS
VDS=-16V,VGS=0V
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±8V,VDS=0V
±100
nA
VGS(th)
VDS=VGS,ID=-250μA
-0.7
-1
V
VGS=-4.5V, ID=-3.4A
73
90
VGS=-2.5V, ID=-2.5A
99
120
VGS=-1.8V, ID=-1.5A
133
160
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
RDS(ON)
gFS
VDS=-5V,ID=-3.4A
-0.45
4
mΩ
7
S
540
PF
70
PF
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=-10V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
50
PF
Turn-on Delay Time
td(on)
10
nS
Turn-on Rise Time
tr
12
nS
44
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
VDD=-10V,ID=-3.4A
VGS=-4.5V,RGEN=3Ω
td(off)
Turn-Off Fall Time
tf
22
nS
Total Gate Charge
Qg
6.1
nC
Gate-Source Charge
Qgs
0.6
nC
Gate-Drain Charge
Qgd
1.6
nC
VDS=-10V,ID=-3.4A,VGS=-4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
Diode Forward Current (Note 2)
IS
VGS=0V,IS=-1A
-0.83
-1
V
-2
A
0.5
V
0.1
mA
SCHOTTKY PARAMETERS
Forward Voltage Drop
VF
IF=0.5A
0.39
Maximum reverse leakage current
Irm
VR=16V
Junction Capacitance
CT
VR=10V
34
Schottky Reverse Recovery Time
trr
IF=1A, dI/dt=100A/μs
5.2
Schottky Reverse Recovery Charge
Qrr
IF=1A, dI/dt=100A/μs
0.8
pF
10
ns
nC
NOTES:
©Silikron Semiconductor CO.,LTD.
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v2.0
SSF4703DC
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS(MOSFET)
ton
tr
Vdd
td(on)
Vgs
Rgen
td(off)
Rl
Vin
90%
Vout
D
toff
tf
VOUT
90%
INVERTED
10%
10%
G
90%
VIN
S
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
Figure1:Switching Test Circuit
8
10
-55 OC
Vgs=5V
Vgs=3V
Vgs=2.5V
6
Id Drain Current(A)
Id - Drain Current(A)
8
6
Vgs=2V
4
25 OC
4
2
2
125 OC
Vgs=1.5V
0
0
0.5
1
1.5
2
2.5
3
3.5
0
4
0
0.5
1
1.5
2
Vgs Gate-to-Source Voltage(V)
Vds - Drain-to Source Voltage(V)
Figure 3:Output Characteristics
Figure 4:Transfer Characteristics
0.3
800
700
0.25
Vgs=1.8V
0.2
C - Capacitance(pF)
Rdson - On-Resisitance(Ohm)
2.5
Vgs=2.5V
0.15
Vgs=4.5V
0.1
0.05
Ciss
600
500
400
300
Coss
200
100
Crss
0
0
0
2
4
6
8
Id - Drain Current(A)
10
0
Figure 5:On-Resistance vs. Drain Current
©Silikron Semiconductor CO.,LTD.
5
10
15
Vds - Drain-to-Source Voltage(V)
20
Figure 6: Capacitance
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ZθJA Normalized Transient
Thermal Resistance
SSF4703DC
Square Wave Pluse Duration(sec)
Figure 7: Normalized Maximum Transient Thermal Impedanc
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS(SCHOTTKY)
10
10
0.1
If - Forward Current(A)
Ir - Reverse Current(A)
1
20V
10V
0.01
Tj=150oC
1
Tj=25oC
0.001
0.0001
0
25
50
75
100
125
0.1
150
0
Tj - Juction Temperature(oC)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Vf - Forward Drop(V)
Figure 8:
Reverse Current vs. Junction Temperature
©Silikron Semiconductor CO.,LTD.
0.1
Figure 9: Forward Voltage Drop
4
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SSF4703DC
DFN3X2-8L PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Top View
Bottom View
SYMBOL
Side View
COMMON DIMENSIONS(MM)
MIN.
NOM.
MAX.
A
0.70
0.75
0.80
A1
—
0.02
0.05
b
0.25
0.30
0.35
c
0.18
0.20
0.25
D
2.90
3.00
3.10
e
0.65 BCS.
Nd
1.95 BCS.
E
L
h
1.90
2.00
2.10
0.28
0.35
0.42
0.15X45°
NOTES:
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
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v2.0
SSF4703DC
ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
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functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test devices
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This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.
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