Datasheet

SSF8521
DESCRIPTION
The SSF8521 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge . A
Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch,
or for DC-DC conversion applications.
Schematic diagram
GENERAL FEATURES
● MOSFET
VDS = -20V,ID = -4.4A
RDS(ON) < 170mΩ @ VGS=-1.8V
RDS(ON) < 110mΩ @ VGS=-2.5V
RDS(ON) < 80mΩ @ VGS=-4.5V
SCHOTTKY
VR = 20V, IF = 4.1A, VF<0.575V @ 1.0A
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●DC-DC conversion applications
●Load switch
●Power management
DFN3X2-8L Bottom View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
8521
SSF8521
DFN3X2-8L
-
-
-
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
MOSFET
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8
V
ID
-4.4
A
IDM
-13
A
Drain Current-Continuous@ Current-Pulsed (Note 1)
Schottky
Unit
Schottky reverse voltage
VR
20
V
Continuous Forward Current
IF
4.1
A
Maximum Power Dissipation
PD
2.1
TJ,TSTG
-55 To 150
Operating Junction and Storage Temperature Range
W
-55 To 150
℃
THERMAL CHARACTERISTICS
©Silikron Semiconductor CO.,LTD
2008.12.1
Version : 1.1
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SSF8521
MOSFET
Thermal Resistance, Junction-to-Ambient (Note 2)
RθJA
100
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
℃/W
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-20
V
Zero Gate Voltage Drain Current
IDSS
VDS=-16V,VGS=0V
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±8V,VDS=0V
±100
nA
VGS(th)
VDS=VGS,ID=-250μA
-1.2
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
RDS(ON)
Forward Transconductance
gFS
-0.45
VGS=-4.5V, ID=-3.2A
64
80
VGS=-2.5V, ID=-2.2A
85
110
VGS=-1.8V, ID=-1.0A
120
170
VDS=-10V,ID=-2.9A
8
S
680
PF
100
PF
mΩ
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
70
PF
Turn-on Delay Time
td(on)
5.8
nS
Turn-on Rise Time
tr
11.7
nS
16
nS
VDS=-10V,VGS=0V,
F=1.0MHz
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
td(off)
VDD=-10V,ID=-3.2A
VGS=-4.5V,RGEN=2.4Ω
Turn-Off Fall Time
tf
12.4
nS
Total Gate Charge
Qg
7.4
nC
Gate-Source Charge
Qgs
1.4
nC
Gate-Drain Charge
Qgd
2.5
nC
VDS=-10V,ID=-3.2A,VGS=-4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-2.5A
-0.8
Reverse Recovery Time
Trr
13.5
nS
Reverse Recovery Charge
Qrr
VGS = 0 V, IS = −1.0 A ,
dIS/dt = 100 A/us
6.5
nC
©Silikron Semiconductor CO.,LTD
2008.12.1
Version : 1.1
-1.2
V
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SSF8521
SCHOTTKY DIODE PARAMETERS
Forward Voltage Drop
VF
IF=1.0A
Maximum reverse leakage current
Irm
VR=20V
0.51
0.575
V
5
uA
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
Vdd
td(on)
Vin
Vgs
Rgen
td(off)
Rl
D
Vout
toff
tf
90%
VOUT
90%
INVERTED
10%
10%
G
90%
VIN
S
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
ZθJA Normalized Transient
Thermal Resistance
Figure1:Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedanc
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2008.12.1
Version : 1.1
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SSF8521
DFN3X2-8L PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
COMMON DIMENSIONS(MM)
PKG.
W:VERY VERY THIN
REF.
MIN.
NOM.
MAX.
A
0.70
0.75
0.80
A1
0.00
—
0.05
A3
0.2 REF.
D
2.95
3.00
3.05
E
1.95
2.00
2.05
b
0.25
0.30
0.35
L
0.28
0.35
0.43
D2
0.77
0.92
1.02
E2
0.20
0.30
0.40
e
0.65 BCS.
NOTES:
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exac
©Silikron Semiconductor CO.,LTD
2008.12.1
Version : 1.1
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SSF8521
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©Silikron Semiconductor CO.,LTD
2008.12.1
Version : 1.1
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