Datasheet

SSF3745
D
DESCRIPTION
The SSF3745 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
G
S
Schematic diagram
GENERAL FEATURES
● VDS =-30V,ID =-6.2A
RDS(ON) < 50mΩ @ VGS=-10V
RDS(ON) < 100mΩ @ VGS=-4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
3745
SSF3745
SOT-223
-
-
-
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
ID(25℃)
-6.2
A
ID(70℃)
-5
A
IDM
-20
A
PD
2.7
W
TJ,TSTG
-55 To 175
℃
RθJA
45
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
©Silikron Semiconductor CO.,LTD.
BVDSS
VGS=0V ID=-250μA
1
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V
v1.0
SSF3745
Zero Gate Voltage Drain Current
IDSS
VDS=-30V,VGS=0V
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±25V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-3
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-5.3A
50
mΩ
VGS=-4.5V, ID=-4.2A
100
mΩ
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
VDS=-5V,ID=-20A
-1
5
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=-15V,VGS=0V,
F=1.0MHz
554
PF
246
PF
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
170
PF
Turn-on Delay Time
td(on)
14
nS
Turn-on Rise Time
tr
10
nS
24
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
td(off)
VDS=-30V,VGS=-10V,RGEN=3Ω
ID=1A
Turn-Off Fall Time
tf
19
nS
Total Gate Charge
Qg
11.7
nC
Gate-Source Charge
Qgs
3.5
nC
Gate-Drain Charge
Qgd
7.2
nC
Body Diode Reverse Recovery Time
Trr
32
nS
Body Diode Reverse Recovery Charge
Qrr
21
nC
VDS=-30V,ID=-20A,VGS=-10V
IF=-20A, dI/dt=100A/µs
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-1A
-1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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SSF3745
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
td(on)
toff
tf
td(off)
90%
VOUT
90%
INVERTED
10%
10%
90%
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
ZthJA Normalized Transient
Thermal Resistance
Figure 1:Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3 Normalized Maximum Transient Thermal Impedanc
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SSF3745
SOT-223 PACKAGE INFORMATION
NOTES:
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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SSF3745
ATTENTION:
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