Datasheet

SSF1090A Main Product Characteristics:
VDSS
100V
RDS(on)
72mΩ(typ)
ID
15A ①
D2PAK Assignment Features and Benefits:
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
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„
„
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„
Schematic diagram Marking and pin
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications Absolute max Rating:
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V ①
15
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V ①
10
IDM
Pulsed Drain Current ②
60
Units
A
Power Dissipation ③
41.7
W
Linear Derating Factor
0.28
W/°C
VDS
Drain-Source Voltage
100
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=30mH
135
mJ
IAS
Avalanche Current @ L=30mH
3
A
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 175
°C
PD @TC = 25°C
©Silikron Semiconductor CO.,LTD.
2011.07.25
www.silikron.com Version : 1.0
page 1 of 8
SSF1090A Thermal Resistance
Symbol
Characterizes
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case ③
—
3.6
℃/W
Junction-to-Ambient (t ≤ 10s)④
—
60
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
42
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Min.
Typ.
Max.
Units
V
100
— — —
72
90
—
122.3
—
2
—
4
—
2.76
—
—
—
1
—
—
50
Gate-to-Source forward leakage
— — 100
Gate-to-Source reverse leakage
‐100 — — — 20.5
— mΩ
V
μA
A
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 2A
TJ = 125℃
VDS = VGS, ID = 250μA
TJ = 125℃
VDS = 30V, VGS =0V
TJ = 125℃
VGS =20V
VGS = -20V
Qg
Total gate charge
Qgs
Gate-to-Source charge
— 4.6
— Qgd
Gate-to-Drain("Miller") charge
— 8.4
— VGS = 10V
td(on)
Turn-on delay time
— 12.2
— VGS=10V, VDD=50V,
tr
Rise time
— 36.5
— td(off)
Turn-Off delay time
— 52.3
— tf
Fall time
— 31.4
— Ciss
Input capacitance
— 720
— Coss
Output capacitance
— 72
— Crss
Reverse transfer capacitance
— 49
— ID = 9.2A
nC
ns
VDD=80V
RL=5.4Ω,
RGEN=18Ω
ID=9.2A
VGS = 0V
pF
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
15 ①
A
—
—
60
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.85
1.5
V
IS=3A, VGS=0V,TJ= 25°C
trr
Reverse Recovery Time
—
35.1
—
ns
TJ = 25°C, IF =9.2A, di/dt =
Qrr
Reverse Recovery Charge
—
68.6
—
nC
100A/μs
©Silikron Semiconductor CO.,LTD.
2011.07.25
www.silikron.com Version : 1.0
page 2 of 8
SSF1090A Test circuits and Waveforms
Switch Waveforms:
Notes: ①Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
②Repetitive rating; pulse width limited by max junction temperature.
③The power dissipation PD is based on max junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
©Silikron Semiconductor CO.,LTD.
2011.07.25
www.silikron.com Version : 1.0
page 3 of 8
SSF1090A Typical electrical and thermal characteristics
Figure 1: Typical Output Characteristics Figure 3. Drain-to-Source Breakdown Voltage vs.
Temperature
©Silikron Semiconductor CO.,LTD.
Figure 2. Gate to source cut-off voltage
2011.07.25
www.silikron.com Figure 4: Normalized On-Resistance Vs. Case
Temperature
Version : 1.0
page 4 of 8
SSF1090A Typical electrical and thermal characteristics Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2011.07.25
www.silikron.com Version : 1.0
page 5 of 8
SSF1090A Mechanical Data:
D2PAK PACKAGE OUTLINE DIMENSION
Symbol
A
B
C
D1
D2
D3
E
F
G
H
I
K
a1
a2
Dimension In Millimeters
Min
Max
9.660
10.280
1.020
1.320
8.590
9.400
1.140
1.400
0.700
0.950
5.080 (TYP)
15.090
15.390
1.150
1.400
4.300
4.700
2.290
2.790
0.250 (TYP)
1.300
1.600
0.450
0.650
©Silikron Semiconductor CO.,LTD.
00
80
2011.07.25
www.silikron.com Dimension In Inches
Min
Max
0.380
0.405
0.040
0.052
0.338
0.370
0.045
0.055
0.028
0.037
0.200 (TYP)
0.594
0.606
0.045
0.055
0.169
0.185
0.090
0.110
0.010 (TYP)
0.051
0.063
0.018
0.026
10
Version : 1.0
80
page 6 of 8
SSF1090A Ordering and Marking Information
Device Marking: SSF1090A
Package (Available)
D2PAK
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package
Type
D2PAK
Units/
Tube
Tubes/Inner
Box
50
20
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Units/Inner Inner
Box
Boxes/Carton
Box
1000
6
Duration
Sample Size
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2011.07.25
www.silikron.com Version : 1.0
Units/Carton
Box
6000
page 7 of 8
SSF1090A ATTENTION:
■
■
■
■
■
■
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Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
safe design, redundant design, and structural design.
In the event that any or all Silikron products(including technical data, services) described or contained herein are
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without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical,
including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior
written permission of Silikron Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for
volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or
implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
Silikron product that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change
without notice.
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Worldwide Sales and Service:
[email protected]
Technical Support:
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E-mail: [email protected]
©Silikron Semiconductor CO.,LTD.
2011.07.25
www.silikron.com Version : 1.0
page 8 of 8
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