SSF1006A
Feathers:
ID =200A
Advanced trench process technology
avalanche energy, 100% test
Fully characterized avalanche voltage and current
BV=100V
Rdson=4.7mΩ（Typ.）
Description:
The SSF1006A is a new generation of high voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF1006A is
assembled in high reliability and qualified assembly house.
Application:
Power switching application
SSF1006A TOP View (D2PAK)
Absolute Maximum Ratings
Parameter
Max.
ID@Tc=25 ْC
Continuous drain current,VGS@10V
200
ID@Tc=100ْC
Continuous drain current,VGS@10V
130
IDM
Pulsed drain current ①
800
Power dissipation
326
W
Linear derating factor
1.5
W/ ْC
Gate-to-Source voltage
±20
V
960
mJ
PD@TC=25ْC
VGS
EAS
Single pulse avalanche energy
②
Units
A
EAR
Repetitive avalanche energy
TBD
mJ
dv/dt
Peak diode recovery voltage
31
v/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
ْC
–55 to +175
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
0.46
—
RθJA
Junction-to-ambient
—
—
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min.
Typ.
Drain-to-Source breakdown voltage
100
—
—
V
VGS=0V,ID=250μA
RDS(on) Static Drain-to-Source on-resistance
—
4.7
5.5
mΩ
VGS=10V,ID=30A
VGS(th)
2.0
—
4.0
V
VDS=VGS,ID=250μA
—
—
2
—
—
10
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
BVDSS
IDSS
IGSS
Gate threshold voltage
Drain-to-Source leakage current
©Silikron Semiconductor Corporation
2010.12.10
Max. Units
Test Conditions
VDS=100V,VGS=0V
μA
VDS=100V,
VGS=0V,TJ=150ْC
nA
VGS=20V
VGS=-20V
Version: 1.0
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SSF1006A
Qg
Total gate charge
—
108
Qgs
Gate-to-Source charge
—
24
—
Qgd
Gate-to-Drain("Miller") charge
—
37
—
td(on)
Turn-on delay time
—
18.2
tr
Rise time
—
15.6
td(off)
Turn-Off delay time
—
70.5
nC
ID=30A,VGS=10V
VDD=30V
VDD=30V
nS
ID=2A ,RL=15Ω
RG=2.5Ω
tf
Fall time
—
13.8
VGS=10V
Ciss
Input capacitance
—
3150
VGS=0V
Coss
Output capacitance
—
350
Crss
Reverse transfer capacitance
—
240
pF
VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ①
Min.
Typ.
Max.
—
—
160
Units
MOSFET symbol
A
—
—
520
Test Conditions
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.3
V
TJ=25ْC,IS=60A,VGS=0V ③
trr
Reverse Recovery Time
—
57
—
nS
TJ=25ْC,IF=75A
Qrr
Reverse Recovery Charge
—
107
—
μC
di/dt=100A/μs ③
ton
Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, VDD = 50V,Id=80A
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C
EAS Test Circuit:
©Silikron Semiconductor Corporation
Gate Charge Test Circuit:
2010.12.10
Version: 1.0
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SSF1006A
Switch Time Test Circuit:
Switch Waveform:
Transfer Characteristic
Capacitance
On Resistance vs. Junction Temperature
©Silikron Semiconductor Corporation
Breakdown Voltage vs. Junction Temperature
2010.12.10
Version: 1.0
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SSF1006A
Gate Charge
Source-Drain Diode Forward Voltage
Safe Operation Area
Max Drain Current vs. Junction
Transient Thermal Impedance Curve
©Silikron Semiconductor Corporation
2010.12.10
Version: 1.0
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SSF1006A
D2PAK MECHANICAL DATA:
©Silikron Semiconductor Corporation
2010.12.10
Version: 1.0
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