SSF1016D
Feathers:
ID =60A
Advanced trench process technology
avalanche energy, 100% test
Fully characterized avalanche voltage and current
BV=100V
Rdson=16mΩ (Max.)
Description:
The SSF1016D is a new generation of high voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF1016D is
assembled in high reliability and qualified assembly house.
Application:
Power switching application
SSF1016D TOP View (DPAK)
Absolute Maximum Ratings
Parameter
Max.
ID@Tc=25 ْC
Continuous drain current,VGS@10V
60
ID@Tc=100ْC
Continuous drain current,VGS@10V
50
IDM
Pulsed drain current ①
240
Power dissipation
144
W
Linear derating factor
1.5
W/ ْC
Gate-to-Source voltage
±20
V
380
mJ
31
v/ns
PD@TC=25ْC
VGS
EAS
Single pulse avalanche energy
dv/dt
Peak diode recovery voltage
TJ
Operating Junction and
TSTG
Storage Temperature Range
②
Units
A
ْC
–55 to +175
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
0.52
—
RθJA
Junction-to-ambient
—
—
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min.
Typ.
Drain-to-Source breakdown voltage
100
—
—
V
VGS=0V,ID=250μA
RDS(on) Static Drain-to-Source on-resistance
—
11
16
mΩ
VGS=10V,ID=30A
VGS(th)
2.0
—
4.0
V
VDS=VGS,ID=250μA
—
—
2
—
—
10
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
Total gate charge
—
90
BVDSS
IDSS
IGSS
Qg
Gate threshold voltage
Drain-to-Source leakage current
©Silikron Semiconductor Corporation
2011.2.21
Max. Units
Test Conditions
VDS=100V,VGS=0V
μA
VDS=100V,
VGS=0V,TJ=150ْC
nA
VGS=20V
VGS=-20V
nC
Version: 1.1
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SSF1016D
ID=30A,VGS=10V
Qgs
Gate-to-Source charge
—
20
—
Qgd
Gate-to-Drain("Miller") charge
—
31
—
td(on)
Turn-on delay time
—
18.2
tr
Rise time
—
15.6
td(off)
Turn-Off delay time
—
70.5
tf
Fall time
—
13.8
VGS=10V
Ciss
Input capacitance
—
3150
VGS=0V
Coss
Output capacitance
—
350
Crss
Reverse transfer capacitance
—
240
VDD=30V
VDD=30V
ID=2A ,RL=15Ω
nS
RG=2.5Ω
VDS=25V
pF
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ①
Min.
Typ.
Max.
—
—
75
Units
MOSFET symbol
A
—
—
300
Test Conditions
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.3
V
TJ=25ْC,IS=60A,VGS=0V ③
trr
Reverse Recovery Time
－
57
—
nS
TJ=25ْC,IF=75A
Qrr
Reverse Recovery Charge
－
107
—
μC
di/dt=100A/μs ③
ton
Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, VDD = 50V,Id=37A
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω
Starting TJ = 25°C
EAS Test Circuit:
Switch Time Test Circuit:
©Silikron Semiconductor Corporation
Gate Charge Test Circuit:
Switch Waveform:
2011.2.21
Version: 1.1
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SSF1016D
Capacitance
Transfer Characteristic
On Resistance vs. Junction Temperature
©Silikron Semiconductor Corporation
Breakdown Voltage vs. Junction Temperature
2011.2.21
Version: 1.1
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SSF1016D
Gate Charge
Source-Drain Diode Forward Voltage
Safe Operation Area
Max Drain Current vs. Junction
Transient Thermal Impedance Curve
©Silikron Semiconductor Corporation
2011.2.21
Version: 1.1
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SSF1016D
DPAK MECHANICAL DATA:
©Silikron Semiconductor Corporation
2011.2.21
Version: 1.1
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