Datasheet

SSIG15N135H
Main Product Characteristics:
VCES
1350V
VCE(sat)
1.9V (typ.)
ID
15A @ TC = 100°C
TO-247
Schematic diagram
Features and Benefits:


Advanced Trench-FS Process Technology
Low Collector-Emitter Saturation Voltage, Typical
Data is [email protected]
Fast Switching
High Input Impedance
Pb- Free Product
Power Switch Circuit of Induction Cooker




Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces VCE(sat) rating. These
features combine to make this design an extremely efficient and reliable device for use in power switching
application of induction cooker and a wide variety of other applications.
Absolute max Rating:
Symbol
Parameter
Max.
Units
IC @ TC = 25°C
Continuous Collector Current
30
IC @ TC = 100°C
Continuous Collector Current
15
ICM
Pulsed Collector Current
45
Power Dissipation@ TC = 25°C
260
W
Power Dissipation@ TC = 100°C
130
W
VCES
Collector-Emitter Voltage
1350
V
VGES
Gate-to-Emitter Voltage
± 30
V
TJ
Operating Junction Temperature Range
-55 to +175
°C
TSTG
Storage Temperature Range
-55 to +175
°C
TL
Maximum Temperature of Solding
260
°C
PD @TC = 25°C
©Silikron Semiconductor CO.,LTD.
2015.03.09
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SSIG15N135H
Thermal Resistance
Symbol
Characterizes
Typ.
Max.
Units
RθJC
Junction-to-case①
—
0.6
℃/W
RθJA
Junction-to-ambient ②
—
40
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
V(BR)CES
VCE(sat)
Parameter
Collector-to-Emitter breakdown
voltage
Min.
Typ.
Max.
Units
1350
—
—
V
—
1.9
2.2
V
—
2.05
—
V
Collector-Emitter Saturation voltage
Conditions
VGE = 0V, IC = 0.5mA
VGE=15V,
IC=15A,TC=25°C
VGE=15V,
IC=15A,TC=125°C
VGE(th)
Gate threshold voltage
4.8
5.8
6.8
V
VGE= VCE, ID = 0.4mA
ICES
Zero gate voltage collector current
—
—
100
μA
VCE = 1350V
IGES
Gate-to-Emitter forward leakage
—
—
300
—
—
-300
Qg
Total gate charge
—
165
—
Qge
Gate-to-Emitter charge
—
12
—
Qgc
Gate-to-Collector("Miller") charge
—
55
—
td(off)
Turn-Off delay time
—
190
—
tf
Fall time
—
100
—
Eoff
Turn-Off delay time
—
0.8
—
Cies
Input capacitance
—
1250
—
Coes
Output capacitance
—
40
—
Cres
Reverse transfer capacitance
—
32
—
trr
Reverse Recovery Time
—
230
—
ns
TJ = 25°C, IF =15A, di/dt =
Qrr
Reverse Recovery Charge
—
2450
—
nC
20A/μs
μA
VGE =30V
VGE = -30V
Ic = 20A,
nC
VCE= 600V,
VGE = 15V
ns
mJ
VGE=15V, Vcc=600V,
Rg=10Ω
IC=15A, TJ = 25°C
VGE = 0V
pF
VCE = 25V
ƒ = 1MHz
Notes:
①These curves are based on the junction-to-case thermal impedance which is measured with the
device mounted to a large heat sink, assuming maximum junction temperature of TJ(MAX)=175°C.
②The R JA is the sum of the thermal impedance from junction to case RJC and case to ambient.
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SSIG15N135H
Typical electrical and thermal characteristics
45
45
Tj=25° C
40
VGE=15V
40
VGE=18V
IC,Collector Current(A)
30
VGE=12V
25
VGE=10V
20
15
10
VGE=8V
VGE=15V
VGE=18V
35
35
IC,Collector Current(A)
Tj=175° C
VGE=12V
30
25
VGE=10V
20
15
VGE=8V
10
5
5
0
0
2
4
6
8
0
10
0
2
VCE,Collector to Emitter Voltage(V)
4
6
8
10
VCE,Collector to Emitter Voltage(V)
O
Figure 1: Typical Output Characteristics(TJ=25 C)
O
Figure 2: Typical Output Characteristics(TJ=175 C)
45
7
35
VGE, Gate-Emitter Voltage (V)
IC, Collector Current(A)
40
30
25
20
15
O
175 C
10
5
O
25 C
6
5
4
3
2
0
4
6
8
10
1
12
0
VGE, Gate-Emitter Voltage (V)
Figure 3.Typical Transfer Characteristics
25
50
75
100
125
150
O
TJ, Junction Temperature ( C)
Figure 4: Gate to Emitter threshold Voltage
as a function of TJ
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175
SSIG15N135H
Typical electrical and thermal characteristics
2.7
45
IC=30A
40
2.4
O
IF, Forward current (A)
35
VF,Forward Voltage (V)
TJ=25 C
30
25
O
TJ=175 C
20
15
10
2.1
IC=15A
1.8
1.5
IC=7.5A
1.2
5
0
2.0
0.9
2.5
3.0
3.5
4.0
4.5
5.0
0
o
50
75
100
125
150
175
o
TJ,Junction Temperature ( C)
TJ,Junction Temperature ( C)
Figure 5: Typical Diode Forward Characteristics
Figure 6. Forward Voltage as a Function of TJ
4.0
10000
3.5
CAP,Capacitance(pF)
VCE,Collector-Emitter Voltage (V)
25
IC=30A
3.0
IC=15A
2.5
2.0
IC=7.5A
1.5
1.0
0
25
50
75
100
125
150
175
o
1000
100
Coss
Crss
10
0
10
20
VCE, Collector-Emitter Voltage (V)
TJ,Junction Temperature ( C)
Figure 7. Typical VCE(sat) as a Function of TJ
©Silikron Semiconductor CO.,LTD.
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2015.03.09
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Figure 8: Capacitance Characteristics
Version : 1.0
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30
SSIG15N135H
Typical electrical and thermal characteristics
1000
4
td(on)
10
VCE=600V
VGE=± 15V
IC=15A
TC=25°C
3
tf
100
Switching Loss(mJ)
Switching Time(ns)
td(off)
tr
VCE=600V
VGE=± 15V
IC=40A
TC=25°C
Eon
2
Eoff
1
1
0
10
20
30
40
50
60
70
0
0
Rg,Gate Resistance(Ω )
10
20
30
40
Rg,Gate resistence(Ω)
Figure 9: Switching Time Vs Rg
Figure 10: Switching Loss Vs Rg
3.0
15
VGE,Gate to Emitter Voltage(V)
2.5
Switching Loss(mJ)
Eon
VCE=600V
VGE=± 15V
TC=25° C
Rg=10ohm
2.0
Eoff
1.5
1.0
0.5
12
9
6
IC =15A
VCE=600V
VGE =15V
3
0.0
5
10
15
20
25
30
35
40
45
0
IC,Collector Current(A)
5
10
15
20
QG, Gate charge(nC)
Figure11: Switching Loss Vs IC
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Figure 12: Gate Charge Characteristics
2015.03.09
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25
SSIG15N135H
Typical electrical and thermal characteristics
100
100
50μs
100μs
10
1ms
DC Operation
1
IC,Collector Current(A)
IC,Collector Current(A)
Max Current Limited
10
1
0.1
1
10
100
1000
1
VCE,Collector to Emitter Volgate(V)
10
100
1000
VCE,Collector to Emitter Voltage(V)
Figure 13. Maximum Forward Biased Safe
Figure 14. Turn Off Safe Operating Area
Operating Area
Case Temperature
Figure15. Normalized Maximum Transient Thermal Impedance
©Silikron Semiconductor CO.,LTD.
2015.03.09
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SSIG15N135H
Mechanical Data:
©Silikron Semiconductor CO.,LTD.
2015.03.09
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SSIG15N135H
Ordering and Marking Information
Device Marking: SSIG15N135H
Package (Available)
TO247
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
TO247
30
8
240
1200
5
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃@ 100% of
Max VGES
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2015.03.09
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SSIG15N135H
ATTENTION:
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
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Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Suzhou Silikron Semiconductor Corp.
11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China
TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
©Silikron Semiconductor CO.,LTD.
2015.03.09
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