Datasheet

SSIG20N135H
Main Product Characteristics:
VCES
1350V
VCE(sat)
1.9V (typ.)
ID
20A @ TC = 100°C
TO-247
Schematic diagram
Features and Benefits:


Advanced Trench-FS Process Technology
Low Collector-Emitter Saturation Voltage, Typical
Data is [email protected]
Fast Switching
High Input Impedance
Pb- Free Product
Power Switch Circuit of Induction Cooker




Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces VCE(sat) rating. These
features combine to make this design an extremely efficient and reliable device for use in power switching
application of induction cooker and a wide variety of other applications.
Absolute max Rating:
Symbol
Parameter
Max.
Units
IC @ TC = 25°C
Continuous Collector Current
40
IC @ TC = 100°C
Continuous Collector Current
20
ICM
Pulsed Collector Current
60
Power Dissipation@ TC = 25°C
310
W
Power Dissipation@ TC = 100°C
155
W
VCES
Collector-Emitter Voltage
1350
V
VGES
Gate-to-Emitter Voltage
± 30
V
TJ
Operating Junction Temperature Range
-55 to +175
°C
TSTG
Storage Temperature Range
-55 to +175
°C
TL
Maximum Temperature of Solding
260
°C
PD @TC = 25°C
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2015.03.09
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SSIG20N135H
Thermal Resistance
Symbol
Characterizes
Typ.
Max.
Units
RθJC
Junction-to-case①
—
0.4
℃/W
RθJA
Junction-to-ambient ②
—
40
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
V(BR)CES
VCE(sat)
Parameter
Collector-to-Emitter breakdown
voltage
Min.
Typ.
Max.
Units
1350
—
—
V
—
1.9
2.1
V
—
2.05
—
V
Collector-Emitter Saturation voltage
Conditions
VGE = 0V, IC = 0.5mA
VGE=15V,
IC=20A,TC=25°C
VGE=15V,
IC=20A,TC=125°C
VGE(th)
Gate threshold voltage
4.8
5.8
6.8
V
VGE= VCE, ID = 0.4mA
ICES
Zero gate voltage collector current
—
—
100
μA
VCE = 1350V
IGES
Gate-to-Emitter forward leakage
—
—
200
—
—
-100
Qg
Total gate charge
—
192
—
Qge
Gate-to-Emitter charge
—
16
—
Qgc
Gate-to-Collector("Miller") charge
—
78
—
td(off)
Turn-Off delay time
—
190
—
tf
Fall time
—
100
—
Eoff
Turn-Off delay time
—
0.9
—
Cies
Input capacitance
—
2040
—
Coes
Output capacitance
—
70
—
Cres
Reverse transfer capacitance
—
42
—
trr
Reverse Recovery Time
—
240
—
ns
TJ = 25°C, IF =20A, di/dt =
Qrr
Reverse Recovery Charge
—
3050
—
nC
20A/μs
μA
VGE =30V
VGE = -30V
Ic = 20A,
nC
VCE= 600V,
VGE = 15V
ns
mJ
VGE=15V, Vcc=600V,
Rg=10Ω
IC=20A, TJ = 25°C
VGE = 0V
pF
VCE = 25V
ƒ = 1MHz
Notes:
①These curves are based on the junction-to-case thermal impedance which is measured with the
device mounted to a large heat sink, assuming maximum junction temperature of TJ(MAX)=175°C.
②The R JA is the sum of the thermal impedance from junction to case RJC and case to ambient.
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SSIG20N135H
Typical electrical and thermal characteristics
O
Figure 1: Typical Output Characteristics(TJ=25 C)
Figure 3.Typical Transfer Characteristics
O
Figure 2: Typical Output Characteristics(TJ=175 C)
Figure 4: Gate to Emitter threshold Voltage
as a function of TJ
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SSIG20N135H
Typical electrical and thermal characteristics
Figure 5: Typical Diode Forward Characteristics
Figure 7. Typical VCE(sat) as a Function of TJ
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2015.03.09
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Figure 6. Forward Voltage as a Function of TJ
Figure 8: Capacitance Characteristics
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SSIG20N135H
Typical electrical and thermal characteristics
Figure 9: Switching Time Vs Rg
Figure 10: Switching Loss Vs Rg
Figure11: Switching Loss Vs IC
Figure 12: Gate Charge Characteristics
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SSIG20N135H
Typical electrical and thermal characteristics
Figure 13. Maximum Forward Biased Safe
Figure 14. Turn Off Safe Operating Area
Operating Area
Case Temperature
Figure15. Normalized Maximum Transient Thermal Impedance
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SSIG20N135H
Mechanical Data:
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SSIG20N135H
Ordering and Marking Information
Device Marking: SSIG20N135H
Package (Available)
TO247
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
TO247
30
8
240
1200
5
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃@ 100% of
Max VGES
168 hours
500 hours
1000 hours
3 lots x 77 devices
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2015.03.09
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SSIG20N135H
ATTENTION:
■
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■
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Consult with your Silikron representative nearest you before using any Silikron products described or contained
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[email protected]
Technical Support:
[email protected]
Suzhou Silikron Semiconductor Corp.
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TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
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