SSF1502D Main Product Characteristics:
VDSS
170V(typ)
RDS(on)
0.15Ω(typ)
ID
8A
DPAK Assignment Features and Benefits:
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Schematic diagram Marking and pin
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
8
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
5
IDM
Pulsed Drain Current②
32
Power Dissipation③
33
W
Linear Derating Factor
0.18
W/°C
VDS
Drain-Source Voltage
150
V
VGS
Gate-to-Source Voltage
± 20
V
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 175
°C
PD @TC = 25°C
©Silikron Semiconductor CO.,LTD.
2011.05.25
www.silikron.com Version : 1.0
A
page 1 of 8
SSF1502D Thermal Resistance
Symbol
Characterizes
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case③
—
4.5
℃/W
Junction-to-Ambient (t ≤ 10s) ④
—
70
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
53
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Min.
Typ.
Max.
150
170
—
0.15
0.2
—
0.32
—
2
—
4
—
2.7
—
—
—
1
—
—
50
Gate-to-Source forward leakage
100
Gate-to-Source reverse leakage
‐100 - 37
Units
V
Ω
V
μA
A
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 3A
TJ = 125℃
VDS = VGS, ID = 250μA
TJ = 125℃
VDS = 150,Vgs=10V
TJ = 125°C
VGS =20V
VGS = -20V
Qg
Total gate charge
Qgs
Gate-to-Source charge
7.5
Qgd
Gate-to-Drain("Miller") charge
13.
VGS = 10V
td(on)
Turn-on delay time
32
VGS=10V, VDD=24.6V,
tr
Rise time
51.5
td(off)
Turn-Off delay time
157
tf
Fall time
67
ID=3.00A
Ciss
Input capacitance
1524
VGS = 0V
Coss
Output capacitance
171
Crss
Reverse transfer capacitance
77
ID = 6A
nC
ns
pF
VDD=120V
RL=8.2Ω,
RGEN=2.55Ω
VDS = 25V
ƒ = 800KHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Conditions
—
—
8
A
—
—
32
A
1.5
V
IS=6.00A, VGS=0V,TJ= 25°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
0.82
trr
Reverse Recovery Time
90
ns
TJ = 25°C, IF =6.00A, di/dt =
Qrr
Reverse Recovery Charge
105
nC
25.0A/μs
©Silikron Semiconductor CO.,LTD.
2011.05.25
www.silikron.com Version : 1.0
page 2 of 8
SSF1502D Test circuits and Waveforms
Switch Waveforms:
Notes: ①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
⑥ The maximum current rating is limited by bond-wires.
©Silikron Semiconductor CO.,LTD.
2011.05.25
www.silikron.com Version : 1.0
page 3 of 8
SSF1502D Typical electrical and thermal characteristics
Figure 1: Typical Output Characteristics Figure 3. Drain-to-Source Breakdown Voltage vs.
Temperature
©Silikron Semiconductor CO.,LTD.
Figure 2. Gate to source cut‐off voltage
2011.05.25
www.silikron.com Figure 4: Normalized On-Resistance Vs. Case
Temperature
Version : 1.0
page 4 of 8
SSF1502D Typical electrical and thermal characteristics Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2011.05.25
www.silikron.com Version : 1.0
page 5 of 8
SSF1502D Mechanical Data：
DPAK PACKAGE OUTLINE DIMENSION_CD
Symbol
A
A1
B
B1
C
D
D1
D2
E
E1
e
H
F
K
V2
Dimension In Millimeters
Min
Nom
Max
2.200
2.300
2.380
0.910
1.010
1.110
0.710
0.760
0.810
5.130
5.330
5.460
0.460
0.510
0.560
6.000
6.100
6.200
5.350 (REF)
2.900 (REF)
6.500
6.600
6.700
4.83 (REF)
2.186
2.286
2.386
9.800
10.100
10.400
1.400
1.500
1.700
1.600 (REF)
©Silikron Semiconductor CO.,LTD.
0
Min
0.087
0.036
0.028
0.202
0.018
0.236
0.256
0.086
0.386
0.055
Dimension In Inches
Nom
0.091
0.040
0.030
0.210
0.020
0.240
0.211 (REF)
0.114 (REF)
0.260
0.190 (REF)
0.090
0.398
0.059
0.063 (REF)
Max
0.094
0.044
0.032
0.215
0.022
0.244
0.264
0.094
0.409
0.067
0
8 (REF)
8 (REF)
2011.05.25
www.silikron.com Version : 1.0
page 6 of 8
SSF1502D Ordering and Marking Information
Device Marking: SSF1502D
Package (Available)
DPAK
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Packag
e Type
Units/Tu Tubes/Inner
be
Box
DPAK
80
50
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Units/Inner Inner
Box
Boxes/Carton
Box
4000
10
Duration
Sample Size
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2011.05.25
www.silikron.com Version : 1.0
Units/Carton
Box
40000
page 7 of 8
SSF1502D ATTENTION:
■
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
safe design, redundant design, and structural design.
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Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for
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implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
Silikron product that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change
without notice.
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©Silikron Semiconductor CO.,LTD.
2011.05.25
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