Datasheet

SSF3055
D
DESCRIPTION
The SSF3055 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a Battery protection or in
other Switching application.
G
S
Schematic diagram
GENERAL FEATURES
● VDS = 25V,ID = 12A
RDS(ON) < 120mΩ @ VGS=5V
RDS(ON) < 90mΩ @ VGS=10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
S
3
2
D
1
G
Marking and pin Assignment
Application
●Battery protection
●Load switch
●Power management
TO-252(DPAK) top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
3055
Device
SSF3055
Device Package
To-252(DPAK)
Reel Size
-
Tape width
-
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain [email protected] Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Quantity
-
Limit
Unit
25
±20
12
45
48
-55 To 150
V
V
A
A
W
℃
75
℃/W
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250µA
25
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
25
µA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
±250
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250µA
1.2
2.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=5V, ID=12A
70
120
mΩ
VGS=10V, ID=12A
50
90
mΩ
ON CHARACTERISTICS (Note 3)
©Silikron Semiconductor CO.,LTD.
2008.7.29
0.8
Version : 1.0
page 1 of 3
SSF3055
Forward Transconductance
gFS
VDS=15V,ID=12A
16
S
450
PF
200
PF
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=15V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
60
PF
Turn-on Delay Time
td(on)
6
nS
Turn-on Rise Time
tr
6
nS
20
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
td(off)
VDS=15V,ID=12A
VGS=10V,RGEN=2.5Ω
RL=1Ω
Turn-Off Fall Time
tf
5
nS
Total Gate Charge
Qg
15
nC
Gate-Source Charge
Qgs
2.0
nC
Gate-Drain Charge
Qgd
7.0
nC
VDS=12.5V,ID=6A,VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
Diode Forward Current (Note 2)
IS
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
VGS=0V,IS=12A
IF = IS, dlF/dt = 100A / µS
1.5
V
12
A
30
nS
43
nC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
Vdd
td(on)
Rgen
td(off)
Rl
Vin
Vgs
toff
tf
D
Vout
90%
VOUT
90%
INVERTED
G
10%
10%
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 1: Switching Test Circuit
©Silikron Semiconductor CO.,LTD.
2008.7.29
Figure 2:Switching Waveforms
Version : 1.0
page 2 of 3
SSF3055
TO-252 PACKAGE INFORMATION
NOTES:
1. No current JEDEC outline for this package.
2. L3 and b3 dimensions establish a minimum mounting surface for terminal 3.
3. Dimension (without solder).
4. Add typically 0.002 inches (0.05mm) for solder plating.
5. L1 is the terminal length for soldering.
6. Position of lead to be measured 0.090 inches (2.28mm) from bottom of dimension D.
7. Controlling dimension: Inch.
©Silikron Semiconductor CO.,LTD.
2008.7.29
Version : 1.0
page 3 of 3