Datasheet

SSF32E0E
GENERAL FEATURES
● VDS =30V,ID = 0.1A
RDS(ON) < 8Ω @ VGS=4V
RDS(ON) < 13Ω @ VGS=2.5V
ESD Rating:1000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Schematic diagram
APPLICATION
●Direct Logic-Level Interface: TTL/CMOS
●Drivers: Relays, Solenoids, Lamps,
Hammers,Display, Memories, Transistors, etc.
●Battery Operated Systems
●Solid-State Relays
Marking and pin Assignment
SOT-523 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
S32E
SSF32E0E
SOT-523
Tape width
Quantity
8 mm
3000 units
Ø180mm
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
ID
0.1
ID (70℃)
0.07
IDM
0.4
A
PD
0.2
W
TJ,TSTG
-55 To 150
℃
RθJA
400
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
A
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
©Silikron Semiconductor CO.,LTD.
VGS=0V ID=250μA
BVDSS
1
30
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SSF32E0E
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate-Source Breakdown Voltage
IDSS
IGSS
VDS=30V,VGS=0V
1
μA
VGS=±5V,VDS=0V
100
nA
VGS=±10V,VDS=0V
150
nA
VGS=±20V,VDS=0V
10
uA
BVGSO
VDS=0V, IG=±250uA
±20
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
0.8
Drain-Source On-State Resistance
RDS(ON)
V
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
1.5
VGS=4V, ID=0.01A
5
8
VGS=2.5V, ID=0.001A
7
13
VDS=3V,ID=0.01A
V
Ω
0.02
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=5V,VGS=0V,
F=1.0MHz
45
PF
12
PF
7
PF
15
nS
75
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
Turn-Off Delay Time
td(off)
VDD=5V,VGS=5V,
RGEN=10Ω,RL=500Ω
ID=0.01A
VSD
VGS=0V,IS=0.01A
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
1.3
V
NOTES:
1.
2.
3.
4.
Repetitive Rating: Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board, t ≤ 10 sec.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
Guaranteed by design, not subject to production testing.
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SSF32E0E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Vgs
R gen
td(on)
Rl
Vin
D
ton
tr
td(off)
Vout
90%
VOUT
G
toff
tf
90%
INVERTED
10%
10%
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
Figure 2:Switching Waveforms
Square Wave Pluse Duration(sec)
Figure 3 Normalized Maximum Transient Thermal Impedance
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SSF32E0E
SOT-523 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Symbol
A
A1
A2
b1
b2
c
D
E
E1
e
e1
Dimensions in Millimeters
MIN.
MAX.
0.700
0.900
0.000
0.100
0.700
0.800
0.150
0.250
0.250
0.350
0.100
0.200
1.500
1.700
0.700
0.900
1.450
1.750
0.500TYP
0.900
1.100
L
L1
0.400REF
0.260
0.460
θ
0°
8°
NOTES
1.
2.
3.
4.
5.
All dimensions are in millimeters.
Tolerance ±0.10mm (4 mil) unless otherwise specified
Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
Dimension L is measured in gauge plane.
Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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SSF32E0E
ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can
be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
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functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
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cannot be evaluated in an independent device, the customer should always evaluate and test devices
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This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.
©Silikron Semiconductor CO.,LTD.
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