Datasheet

SSF7504A7
Main Product Characteristics:
VDSS
75V
RDS(on)
2.5mΩ(typ.)
ID
220A ①
1, Gate
2~3,5~7 Source
4,8 Drain
TO-263-7L
Schematic Diagram
Pin Assignment
Features and Benefits:


Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature



Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Parameter
Max.
ID @ TC = 25°C
Symbol
Continuous Drain Current, VGS @ 10V ①
220
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V ①
170
IDM
Pulsed Drain Current ②
880
Power Dissipation ③
333
W
Linear Derating Factor
2.2
W/°C
VDS
Drain-Source Voltage
75
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=2mH
1936
mJ
IAS
Avalanche Current @ L=2mH
44
A
-55 to +175
°C
PD @TC = 25°C
TJ
TSTG
Operating Junction and Storage Temperature Range
©Silikron Semiconductor CO.,LTD.
2013.07.25
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Version : 1.0
Units
A
page 1 of 8
SSF7504A7
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case ③
—
0.45
℃/W
Junction-to-ambient (t ≤ 10s)④
—
62
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
℃/W
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
V(BR)DSS
Drain-to-Source breakdown voltage
75
—
—
V
RDS(on)
Static Drain-to-Source on-resistance
—
2.5
4.0
—
4.1
—
VGS(th)
Gate threshold voltage
2
—
4
—
2.17
—
IDSS
Drain-to-Source leakage current
—
—
1
—
—
50
IGSS
Gate-to-Source forward leakage
—
—
100
—
—
-100
Qg
Total gate charge
—
282
—
Qgs
Gate-to-Source charge
—
51
—
Qgd
Gate-to-Drain("Miller") charge
—
110
—
VGS = 10V
td(on)
Turn-on delay time
—
29
—
VGS=10V, VDS =38V,
tr
Rise time
—
85
—
td(off)
Turn-Off delay time
—
93
—
tf
Fall time
—
81
—
ID =40A
Ciss
Input capacitance
—
10747
—
VGS = 0V
Coss
Output capacitance
—
833
—
Crss
Reverse transfer capacitance
—
788
—
VGS = 0V, ID = 250μA
VGS=10V,ID = 40A
mΩ
TJ = 125°C
VDS = VGS, ID = 250μA
V
TJ = 125°C
VDS =75V,VGS = 0V
μA
TJ = 125°C
VGS =20V
nA
VGS = -20V
ID = 40A,
nC
VDS=60V,
RL=0.95Ω,
nS
RGEN=1.2Ω
pF
VDS = 25V
ƒ = 600KHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
220 ①
A
—
—
880
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.81
1.3
V
IS=40A, VGS=0V
trr
Reverse Recovery Time
—
53
—
nS
TJ = 25°C, IF =40A, di/dt =
Qrr
Reverse Recovery Charge
—
114
—
nC
100A/μs
©Silikron Semiconductor CO.,LTD.
2013.07.25
www.silikron.com
Version : 1.0
page 2 of 8
SSF7504A7
Test circuits and Waveforms
EAS Test Circuit:
Gate charge test circuit:
Switching Time Test Circuit:
Switching Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2013.07.25
www.silikron.com
Version : 1.0
page 3 of 8
SSF7504A7
Typical electrical and thermal characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage vs.
Temperature
©Silikron Semiconductor CO.,LTD.
Figure 4: Normalized On-Resistance Vs. Case
Temperature
2013.07.25
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SSF7504A7
Typical electrical and thermal characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure8. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2013.07.25
www.silikron.com
Version : 1.0
page 5 of 8
SSF7504A7
Mechanical Data:
TO-263-7L Package Outline Dimension (Unit: mm)
©Silikron Semiconductor CO.,LTD.
2013.07.25
www.silikron.com
Version : 1.0
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SSF7504A7
Ordering and Marking Information
Device Marking: SSF7504A7
Package (Available)
TO-263-7L
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
TO-263-7L
50
20
1000
6000
6
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=125℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2013.07.25
www.silikron.com
Version : 1.0
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SSF7504A7
ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
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Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
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even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
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[email protected]
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FAX: (86-512) 65160705
E-mail: [email protected]
©Silikron Semiconductor CO.,LTD.
2013.07.25
www.silikron.com
Version : 1.0
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