Datasheet

SSFN2220
DESCRIPTION
The SSFN2220 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a Battery protection or in other Switching
application.
Schematic diagram
GENERAL FEATURES
● VDS = 20V,ID = 6A
RDS(ON) < 39mΩ @ VGS=2.5V
RDS(ON) < 25mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
Pin Assignment
Pb
●Battery protection
●Load switch
●Power management
DFN2X2-8L bottom view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
2220
SSFN2220
DFN2X2-8L
-
-
-
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
ID
6
A
IDM
40
A
PD
1.3
W
TJ,TSTG
-55 To 150
℃
RθJA
100
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=1mA
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±10V,VDS=0V
±10
μA
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SSFN2220
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
Drain-Source On-State Resistance
RDS(ON)
Forward Transconductance
VDS=VGS,ID=1mA
gFS
0.5
1.3
V
VGS=4.5V, ID=3A
20
25
mΩ
VGS=2.5V, ID=1.5A
30
39
mΩ
VDS=10V,ID=3A
4
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=10V,VGS=0V,
F=1.0MHz
600
PF
100
PF
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
70
PF
Turn-on Delay Time
td(on)
300
nS
Turn-on Rise Time
tr
1000
nS
3000
nS
2200
nS
6.5
nC
0.8
nC
2
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
VDD=10V,ID=3A
VGS=4.5V,RGEN=20kΩ
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=10V,ID=6A,
VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=6A
0.8
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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SSFN2220
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Vgs
Rgen
D
VOUT
Vout
toff
tf
td(off)
90%
Rl
Vin
ton
tr
td(on)
90%
INVERTED
10%
10%
G
90%
VIN
S
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
Figure 1:Switching Test Circuit
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SSFN2220
DFN2X2-8L PACKAGE INFORMATION
NOTES:
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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SSFN2220
ATTENTION:
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