Datasheet

SSBD15L50H
Main Product Characteristics:
IF
15A
VRRM
50V
Tj(max)
150℃
Vf(max)
0.52V
TO-277
Schematic Diagram
SSBD15L50H
Features and Benefits:



High Junction Temperature
High ESD Protection
High Forward & Reverse Surge capability
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC
convertors; this product special design for high forward and reverse surge capability.
Absolute Rating:
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
50
V
RMS Reverse Voltage
35
V
IF(AV)
Average Forward Current
15
A
IFSM
Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
200
A
IRRM
Peak Repetitive Reverse Surge Current(Tp=2us)
2
A
TJ
Maximum operation Junction Temperature Range
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃
Value
Unit
4
℃/W
VRRM
VR(RMS)
Characterizes
Thermal Resistance
Symbol
RθJC
Characterizes
Maximum Thermal Resistance Junction To Case (per leg)
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Characterizes
Min
VR
Reverse Breakdown Voltage
VF
Forward Voltage Drop
IR
Leakage Current
©Silikron Semiconductor CO., LTD.
Typ
Max
50
V
0.45
0.52
0.4
0.47
0.2
50
2013.8.15
www.silikron.com
Unit
V
mA
Version: 1.1
Test Condition
IR=0.5mA
IF=15A, TJ=25℃
IF=15A, TJ=125℃
VR=50V, TJ=25℃
VR=50V, TJ=125℃
page
1of5
SSBD15L50H
I-V Curves:
Figure 1:Typical Forward Characteristics
Figure 2:Typical Capacitance Characteristics
Figure 3:Typical Reverse Characteristics
©Silikron Semiconductor CO., LTD.
2013.8.15
www.silikron.com
Version: 1.1
page
2of5
SSBD15L50H
Mechanical Data:
TO-277 package outline dimension
Unit(mm):
©Silikron Semiconductor CO., LTD.
2013.8.15
www.silikron.com
Version: 1.1
page
3of5
SSBD15L50H
Ordering and Marking Information
Device Marking: SSBD15L50H
Package (Available)
TO-277
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/ Tubes/
Tube Inner
Box
Units/Inner
Box
Inner
Boxes/Carton
Box
Units/
Carton
Box
TO-277
3000
6000
6
36000
2
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO., LTD.
2013.8.15
www.silikron.com
Version: 1.1
page
4of5
SSBD15L50H
ATTENTION:
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should
always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO., LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
safe design, redundant design, and structural design.
In the event that any or all Silikron products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported
without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical,
including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior
written permission of Silikron Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for
volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or
implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
Silikron product that you intend to use.
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Suzhou Silikron Semiconductor Corp.
11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China
TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
©Silikron Semiconductor CO., LTD.
2013.8.15
www.silikron.com
Version: 1.1
page
5of5
Similar pages