Data Sheet

1PSxSB17
4 V, 30 mA low Cd Schottky barrier diode
Rev. 06 — 4 April 2005
Product data sheet
1. Product profile
1.1 General description
Planar low capacitance Schottky barrier diode encapsulated in a very small SMD plastic
package.
Table 1:
Product overview
Type number
Package
Configuration
Philips
JEITA
1PS66SB17
SOT666
-
triple isolated diode
1PS76SB17
SOD323
SC-76
single diode
1PS79SB17
SOD523
SC-79
single diode
1.2 Features
■ Very low diode capacitance
■ Very low forward voltage
■ Very small SMD plastic packages
1.3 Applications
■ Digital applications:
◆ Ultra high-speed switching
◆ Clamping circuits.
■ RF applications:
◆ Diode ring mixer
◆ RF detector
◆ RF voltage doubler
1.4 Quick reference data
Table 2:
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF
continuous forward current
-
-
30
mA
VR
continuous reverse voltage
-
-
4
V
Cd
diode capacitance
-
0.8
1
pF
1PSxSB17
Philips Semiconductors
4 V, 30 mA low Cd Schottky barrier diode
2. Pinning information
Table 3:
Pinning
Pin
Description
Simplified outline
Symbol
SOD323 (SC-76); SOD523 (SC-79)
1
cathode
2
anode
[1]
1
1
2
2
sym001
001aab540
SOT666
1
anode (diode 1)
2
anode (diode 2)
3
anode (diode 3)
4
cathode (diode 3)
5
cathode (diode 2)
6
cathode (diode 1)
[1]
6
5
1
2
4
6
5
1
2
4
3
sym046
3
The marking bar indicates the cathode.
3. Ordering information
Table 4:
Ordering information
Type number
Package
Name
Description
Version
1PS66SB17
-
plastic surface mounted package; 6 leads
SOT666
1PS76SB17
SC-76
plastic surface mounted package; 2 leads
SOD323
1PS79SB17
SC-79
plastic surface mounted package; 2 leads
SOD523
4. Marking
Table 5:
Marking codes
Type number
Marking code
1PS66SB17
N2
1PS76SB17
S7
1PS79SB17
T2
5. Limiting values
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Max
Unit
VR
continuous reverse voltage
-
4
V
IF
continuous forward current
-
30
mA
9397 750 14587
Product data sheet
Min
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 06 — 4 April 2005
2 of 8
1PSxSB17
Philips Semiconductors
4 V, 30 mA low Cd Schottky barrier diode
Table 6:
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
6. Thermal characteristics
Table 7:
Thermal characteristics
Symbol
Parameter
Rth(j-a)
Conditions
thermal resistance from junction to
ambient;
Min
Typ
Max
Unit
[1]
in free air
SOD323
[2]
-
-
450
K/W
SOD523
[3]
-
-
450
K/W
SOT666
[4]
-
-
700
K/W
[1]
For Schottky barrier diodes, thermal run-away has to be considered as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating will be available on request.
[2]
Refer to SOD323 (SC-76) standard mounting conditions.
[3]
Refer to SOD523 (SC-79) standard mounting conditions.
[4]
Refer to SOT666 standard mounting conditions.
7. Characteristics
Table 8:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
VF
Parameter
Conditions
forward voltage
Min
Typ
Max
Unit
IF = 0.1 mA
-
300
350
mV
IF = 1 mA
-
360
450
mV
IF = 10 mA
-
470
600
mV
-
-
250
nA
VR = 0 V; f = 1 MHz
-
0.8
1
pF
VR = 0.5 V; f = 1 MHz
-
0.65
-
pF
see Figure 1;
IR
reverse current
VR = 3 V; see Figure 2
Cd
diode
capacitance
see Figure 3;
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
9397 750 14587
Product data sheet
[1]
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 06 — 4 April 2005
3 of 8
1PSxSB17
Philips Semiconductors
4 V, 30 mA low Cd Schottky barrier diode
006aaa077
102
IR
(nA)
IF
(mA)
006aaa078
105
(1)
104
103
10
(2)
102
(1)
(2)
(3)
(4)
(3)
10
1
1
(4)
10−1
10−1
10−2
10−3
10−2
0
0.2
0.4
0.6
0
0.8
1
2
3
4
VR (V)
VF (V)
(1) Tamb = 150 °C
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(3) Tamb = 25 °C
(4) Tamb = −40 °C
(4) Tamb = −40 °C
Fig 1. Forward current as a function of forward
voltage; typical values.
Fig 2. Reverse current as a function of reverse
voltage; typical values.
mlc797
0.8
Cd
(pF)
0.7
0.6
0.5
0.4
0
1
2
3
VR (V)
4
Tamb = 25 °C; f = 1 MHz
Fig 3. Diode capacitance as a function of reverse voltage; typical values.
9397 750 14587
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 06 — 4 April 2005
4 of 8
1PSxSB17
Philips Semiconductors
4 V, 30 mA low Cd Schottky barrier diode
8. Package outline
0.85
0.75
1.35
1.15
0.65
0.58
1
1.1
0.8
0.45
0.15
1
2.7
2.3
1.65 1.25
1.55 1.15
1.8
1.6
2
2
0.34
0.26
0.40
0.25
0.17
0.11
Dimensions in mm
02-12-13
Fig 4. Package outline SOD523 (SC-79)
0.25
0.10
Dimensions in mm
03-12-17
Fig 5. Package outline SOD323 (SC-76)
1.7
1.5
6
0.6
0.5
5
4
0.3
0.1
1.7
1.5
1.3
1.1
pin 1 index
1
2
3
0.18
0.08
0.27
0.17
0.5
1
Dimensions in mm
04-11-08
Fig 6. Package outline SOT666
9. Packing information
Table 9:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number
Package
Description
Packing quantity
3000
4000
-115
10000
1PS66SB17
SOT666
4 mm pitch, 8 mm tape and reel
-
1PS76SB17
SOD323
4 mm pitch, 8 mm tape and reel
-115
-135
1PS79SB17
SOD523
4 mm pitch, 8 mm tape and reel
-115
-135
[1]
-
For further information and the availability of packing methods, see Section 14.
9397 750 14587
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 06 — 4 April 2005
5 of 8
1PSxSB17
Philips Semiconductors
4 V, 30 mA low Cd Schottky barrier diode
10. Revision history
Table 10:
Revision history
Document ID
Release date Data sheet status
Change notice Doc. number
1PSXSB17_6
20050404
-
9397 750 14587 1PS76SB17_1
PS79SB17_5
Modifications:
•
Product data sheet
Supersedes
Type number 1PS66SB17 added
1PS76SB17_1PS79SB17_5
20041028
Product data sheet
-
9397 750 13733 1PS76SB17_4
1PS76SB17_4
20040126
Product data sheet
-
9397 750 12618 1PS76SB17_3
1PS76SB17_3
20020809
Product data sheet
-
9397 750 10174 1PS76SB17_2
1PS76SB17_2
19990525
Preliminary data sheet -
9397 750 05893 1PS76SB17_1
1PS76SB17_1
19961014
Preliminary data sheet -
9397 750 01342 -
9397 750 14587
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 06 — 4 April 2005
6 of 8
1PSxSB17
Philips Semiconductors
4 V, 30 mA low Cd Schottky barrier diode
11. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 14587
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 06 — 4 April 2005
7 of 8
1PSxSB17
Philips Semiconductors
4 V, 30 mA low Cd Schottky barrier diode
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
General description. . . . . . . . . . . . . . . . . . . . . .
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . .
Quick reference data. . . . . . . . . . . . . . . . . . . . .
Pinning information . . . . . . . . . . . . . . . . . . . . . .
Ordering information . . . . . . . . . . . . . . . . . . . . .
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal characteristics. . . . . . . . . . . . . . . . . . .
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . .
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
Packing information. . . . . . . . . . . . . . . . . . . . . .
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Contact information . . . . . . . . . . . . . . . . . . . . .
1
1
1
1
1
2
2
2
2
3
3
5
5
6
7
7
7
7
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 4 April 2005
Document number: 9397 750 14587
Published in The Netherlands
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