BSC0924NDI

BSC0924NDI
Dual N-Channel OptiMOS™ MOSFET
Product Summary
Features
Q1
Q2
30
30
V
VGS=10 V
5
3.7
mW
VGS=4.5 V
7
5.2
40
40
• Dual N-channel OptiMOS™ MOSFET
VDS
• Integrated monolithic Schottky-like diode
RDS(on),max
• Optimized for high performance Buck converter
• Logic level (4.5V rated)
ID
A
• 100% avalanche tested
• Qualified according to JEDEC1) for target applications
VPhase
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-22
Type
Package
Marking
PG-TISON-8
BSC0924NDI
0924NDI
Maximum ratings, at T j=25 °C, unless otherwise specified 2)
Parameter
Value
Symbol Conditions
Continuous drain current
ID
T C=70 °C, VGS=10V
Unit
Q1
Q2
40
40
3)
17
32
3)
T A=70 °C, VGS=4.5V
T A=25 °C, VGS=10V4)
14
25
10
13
I D,pulse
T C=70 °C
160
160
Avalanche energy, single pulse
E AS
Q1: I D=20 A,
Q2: I D=20 A,
R GS=25 W
9
10
Gate source voltage
V GS
Power dissipation
P tot
T A=25 °C, VGS=4.5V
Pulsed drain current
5)
±20
T A=25 °C2)
T A=25 °C, minimum
footprint3)
Operating and storage temperature
T j, T stg
2.5
1.0
1.0
W
°C
55/150/56
IEC climatic category; DIN IEC 68-1
1)
mJ
V
2.5
-55 ... 150
A
J-STD20 and JESD22
2)
One transistor active
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is
vertical in still air.
3)
4)
5)
Device mounted on a minimum pad (one layer, 70 µm thick). One transistor active
See figure 3 for more detailed information.
Rev.2.0
page 1
2013-07-30
BSC0924NDI
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction case
Q1 R thJC
-
-
4.2
Q2
-
-
3.4
Thermal resistance, junction ambient1)
Q1 R thJA
6 cm2 cooling area2)
-
-
50
minimal footprint,
steady state3)
-
-
125
30
-
-
V
-
15
-
mV/K
V DS=V GS, I D=250 µA
1.2
-
2
V
V DS=24 V, V GS=0 V,
T j=25 °C
-
-
1
µA
-
-
500
V DS=24 V, V GS=0 V,
T j=150 °C
-
-
0.1
-
3
-
V GS=20 V, V DS=0 V
-
-
100
nA
-
5.4
7.0
mW
-
4.2
5.2
-
3.8
5.0
-
2.8
3.7
Q1 R G
1.3
2.6
5.2
Q2
0.5
0.9
1.8
32
65
-
36
71
-
K/W
Q2
Q1
Q2
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Q1
V (BR)DSS V GS=0 V, I D=10 mA
Q2
Breakdown voltage temperature
coefficient
Q1 dV (BR)DSS I D=10 mA, referenced
to 25 °C
Q2 /dT j
Gate threshold voltage
Q1
V GS(th)
Q2
Zero gate voltage drain current
Q1 I DSS
Q2
Q1
Q2
Gate-source leakage current
Q1 I GSS
mA
Q2
Drain-source on-state
resistance
Q1 R DS(on)
V GS=4.5 V, I D=20 A
Q2
Q1
V GS=10 V, I D=20 A
Q2
Gate resistance
Transconductance
Q1 g fs
Q2
Rev.2.0
|V DS|>2|I D|R DS(on)max,
I D=20 A
page 2
W
S
2013-07-30
BSC0924NDI
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
Q1 C iss
-
870
1160
Q2
-
1100
1470
-
330
439
-
460
612
Q1 Crss
-
49
-
Q2
-
64
-
Q1 t d(on)
-
4.7
Q2
-
3.3
-
-
3.8
-
-
2.8
-
-
17
-
Q2
-
15
-
Q1 t f
-
3.0
-
Q2
-
2.2
-
Q1 Q gs
-
2.4
3.2
Gate to drain charge
Q gd
-
2.2
2.9
Gate charge total
Qg
-
6.7
10
Gate plateau voltage
V plateau
-
2.8
-
-
2.9
3.9
-
2.9
3.8
12.8
Dynamic characteristics
Input capacitance
Output capacitance
Q1 C oss
Q2
Reverse transfer capacitance
Turn-on delay time
Rise time
Q1 t r
Q2
Turn-off delay time
Fall time
Q1 t d(off)
V GS=0 V,
V DS= 15 V, f =1 MHz
V DD=15 V,
V GS=10 V, R G=1.6 W,
I D=20 A
pF
ns
Gate Charge Characteristics
Gate to source charge
Gate to source charge
Q2 Q gs
V DD=15 V,
I D=30 A,
V GS=0 to 4.5 V
Gate to drain charge
Q gd
Gate charge total
Qg
8.5
Gate plateau voltage
V plateau
2.7
Output charge
Q1 Q oss
V
nC
V
-
9
12
-
12
16
nC
V DD=15 V, V GS=0 V
Q2
Rev.2.0
nC
page 3
2013-07-30
BSC0924NDI
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
30
Reverse Diode
Diode continuous forward current Q1 I S
Q2
A
40
T C=25 °C
Diode pulse current
Diode forward voltage
Reverse recovery charge
Q1 I S,pulse
-
-
160
Q2
-
-
160
Q1 V SD
V GS=0 V, I F=20 A,
T j=25 °C
-
0.86
1
Q2
V GS=0 V, I F=3 A,
T j=25 °C
-
0.56
0.7
-
5
-
-
5
-
Q1 Q rr
Q2
V R=15 V, I F=I S,
di F/dt =100 A/µs
V
nC
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
device mounted on a minimum pad (one layer, 70 µm thick)
Rev.2.0
page 4
2013-07-30
BSC0924NDI
1 Power dissipation (Q1)
P tot=f(T A)3)
1.2
1.2
1
1
0.8
0.8
Ptot [W]
Ptot [W]
P tot=f(T A)
2 Power dissipation (Q2)
3)
0.6
0.6
0.4
0.4
0.2
0.2
0
0
0
40
80
120
0
160
40
TA [°C]
80
120
160
120
160
TA [°C]
3 Drain current (Q1)
4 Drain current (Q2)
I D=f(T C)
I D=f(T C)
parameter: V GS≥10 V
parameter: V GS≥10 V
40
40
30
30
ID [A]
50
ID [A]
50
20
20
10
10
0
0
0
40
80
120
160
TC [°C]
Rev.2.0
0
40
80
TC [°C]
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BSC0924NDI
5 Safe operating area (Q1)
6 Safe operating area (Q2)
I D=f(V DS); T C=25 °C; D =0
I D=f(V DS); T C=25 °C; D =0
parameter: t p
parameter: t p
103
103
1 µs
102
102
1 µs
10 µs
10 µs
100 µs
100 µs
1 ms
101
ID [A]
ID [A]
1 ms
10 ms
101
10 ms
DC
DC
100
100
10-1
10-1
10-1
100
101
102
10-1
100
VDS [V]
101
102
VDS [V]
7 Max. transient thermal impedance (Q1)
8 Max. transient thermal impedance (Q2)
Z thJC=f(t p)
Z thJC=f(t p)
parameter: D =t p/T
parameter: D =t p/T
101
101
0.5
100
ZthJC [K/W]
ZthJC [K/W]
0.5
0.2
100
0.1
0.2
0.1
0.05
0.02
0.01
0.05
10-1
single pulse
0.02
0.01
single pulse
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
tp [s]
Rev.2.0
10-5
10-4
10-3
10-2
10-1
100
tp [s]
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BSC0924NDI
9 Typ. output characteristics (Q1)
10 Typ. output characteristics (Q2)
I D=f(V DS); T j=25 °C
I D=f(V DS); T j=25 °C
parameter: V GS
parameter: V GS
160
400
10 V
10 V
4.5 V
120
300
4V
4.5 V
ID [A]
ID [A]
3.5 V
80
3.3 V
4V
200
3.5 V
3V
40
100
3.3 V
2.8 V
3V
2.8 V
0
0
0
1
2
3
0
1
VDS [V]
2
3
VDS [V]
11 Typ. drain-source on resistance (Q1)
12 Typ. drain-source on resistance (Q2)
R DS(on)=f(I D); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
15
10
3V
12
8
3.3 V
3.3 V
3V
3.5 V
RDS(on) [mW]
RDS(on) [mW]
3.5 V
9
4V
6
4.5 V
6
4V
4.5 V
5V
4
5V
10 V
10 V
3
2
0
0
0
20
40
60
80
ID [A]
Rev.2.0
0
20
40
60
80
ID [A]
page 7
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BSC0924NDI
I D=f(V GS); |V DS |>2 | I D| R DS(on)max
I D=f(V GS); |V DS |>2 | I D| R DS(on)max
parameter: T j
parameter: T j
160
160
120
120
ID [A]
14 Typ. transfer characteristics (Q2)
ID [A]
13 Typ. transfer characteristics (Q1)
80
40
80
40
150 °C
25 °C
25 °C
150 °C
0
0
0
1
2
3
4
0
1
2
VGS [V]
3
4
VGS [V]
15 Drain-source on-state resistance (Q1)
16 Drain-source on-state resistance (Q2)
R DS(on)=f(T j); I D=20 A; V GS=10 V
R DS(on)=f(T j); I D=20 A; V GS=10 V
9
5
8
4
7
6
RDS(on) [mW]
RDS(on) [mW]
typ
5
typ
4
3
2
3
2
1
1
0
0
-60
-20
20
60
100
140
180
Tj [°C]
Rev.2.0
-60
-20
20
60
100
140
180
Tj [°C]
page 8
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BSC0924NDI
18 Typ. gate threshold voltage (Q2)
V GS(th)=f(T j); V GS=V DS; I D=250 µA
V GS(th)=f(T j); V GS=V DS; I D=10 mA
2.8
2.8
2.4
2.4
2
2
1.6
1.6
VGS(th) [V]
VGS(th) [V]
17 Typ. gate threshold voltage (Q1)
1.2
1.2
0.8
0.8
0.4
0.4
0
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
19 Typ. capacitances (Q1)
20 Typ. capacitances (Q2)
C =f(V DS); V GS=0 V; f =1 MHz
C =f(V DS); V GS=0 V; f =1 MHz
104
104
Ciss
103
Ciss
103
C [pF]
C [pF]
Coss
Coss
102
102
Crss
Crss
101
101
0
10
20
30
VDS [V]
Rev.2.0
0
10
20
30
VDS [V]
page 9
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BSC0924NDI
21 Forward characteristics of reverse diode (Q1)
22 Forward characteristics of reverse diode (Q2)
I F=f(V SD)
I F=f(V SD)
parameter: T j
parameter: T j
103
103
102
102
150 °C
25 °C
25 °C
IF [A]
IF [A]
150 °C
101
100
100 °C
100
10-1
10-1
0
0.2
0.4
0.6
0.8
1
1.2
0
0.2
0.4
VSD [V]
0.6
0.8
24 Avalanche characteristics (Q2)
I AS=f(t AV); R GS=25 W
I AS=f(t AV); R GS=25 W
parameter: T j(start)
parameter: T j(start)
102
102
25 °C
IAV [A]
IAV [A]
1
VSD [V]
23 Avalanche characteristics (Q1)
101
101
25 °C
100 °C
100 °C
125 °C
125 °C
100
100
100
101
102
103
tAV [µs]
Rev.2.0
-55 °C
101
100
101
102
103
tAV [µs]
page 10
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BSC0924NDI
25 Typ. gate charge (Q1)
26 Typ. gate charge (Q2)
V GS=f(Q gate); I D=20 A pulsed
V GS=f(Q gate); I D=20 A pulsed
parameter: V DD
parameter: V DD
10
10
15 V
8
8
15 V
6V
6V
24 V
24 V
VGS [V]
6
VGS [V]
6
4
4
2
2
0
0
0
2
4
6
8
10
12
14
0
12
Qgate [nC]
24
Qgate [nC]
27 Drain-source breakdown voltage (Q1)
28 Typ. drain-source leakage current (Q2)
V BR(DSS)=f(T j); I D=1 mA
I DSS=f(V DS ); V GS=0 V
parameter: T j
35
10-2
34
33
10-3
125 °C
31
IDSS [A]
VBR(DSS) [V]
32
30
10-4
100 °C
29
75 °C
28
10-5
27
25 °C
26
10-6
25
-60
-20
20
60
100
140
180
5
10
15
20
25
VDSj [V]
Tj [°C]
Rev.2.0
0
page 11
2013-07-30
BSC0924NDI
PG-TISON
Rev.2.0
page 12
2013-07-30
BSC0924NDI
PG-TISON
Rev.2.0
page 13
2013-07-30
BSC0924NDI
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.2.0
page 14
2013-07-30
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