Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D891
BOTTOM VIEW
BAT54L
Schottky barrier diode
Product data sheet
2003 Jun 23
NXP Semiconductors
Product data sheet
Schottky barrier diode
BAT54L
FEATURES
DESCRIPTION
• Low forward voltage
Planar Schottky barrier diode encapsulated in a SOD882
leadless ultra small plastic package.
• Leadless ultra small plastic package
(1 mm × 0.6 mm × 0.5 mm)
• Boardspace 1.17 mm2 (approx. 10% of SOT23)
• Power dissipation comparable to SOT23.
handbook, halfpage
APPLICATIONS
• Ultra high-speed switching
Bottom view
• Voltage clamping
MDB391
Marking code: S3.
The marking bar indicates the cathode.
• Protection circuits
• Mobile communication, digital (still) cameras, PDAs and
PCMCIA cards.
Fig.1 Simplified outline (SOD882) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
−
30
V
IF
continuous forward current
−
200
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ ≤ 0.5
−
300
mA
IFSM
non-repetitive peak forward current
tp < 10 ms
−
600
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Refer to SOD882 standard mounting conditions (footprint), FR4 printed-circuit board with 60 μm copper strip line.
2003 Jun 23
2
NXP Semiconductors
Product data sheet
Schottky barrier diode
BAT54L
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
CONDITIONS
forward voltage
MAX.
UNIT
see Fig.2
IF = 0.1 mA
240
mV
IF = 1 mA
320
mV
IF = 10 mA
400
mV
IF = 30 mA
500
mV
IF = 100 mA
800
mV
IR
continuous reverse current
VR = 25 V; see Fig.3; note 1
2
μA
Cd
diode capacitance
VR = 1 V; f = 1 MHz; see Fig.4
10
pF
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
500
K/W
Note
1. Refer to SOD882 standard mounting conditions (footprint), FR4 printed-circuit board with 60 μm copper strip line.
Soldering
Reflow soldering is the only recommended soldering method.
2003 Jun 23
3
NXP Semiconductors
Product data sheet
Schottky barrier diode
BAT54L
GRAPHICAL DATA
MSA892
IF
I
R
(μA)
(1) (2) (3)
(mA)
10
MSA893
10 3
3
10halfpage
handbook,
(1)
10 2
2
(2)
10
10
1
10 1
(1)
(2) (3)
1
(3)
10 1
0
0.4
0.8
VF (V)
0
1.2
10
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.2
Fig.3
Forward current as a function of forward
voltage; typical values.
MSA891
15
handbook, halfpage
Cd
(pF)
10
5
0
0
10
20
VR (V)
30
f = 1 MHz; Tamb = 25 °C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2003 Jun 23
4
20
VR (V)
30
Reverse current as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
Schottky barrier diode
BAT54L
PACKAGE OUTLINE
Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm
L
SOD882
L
1
2
b
e1
A
A1
E
D
(2)
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
A1
max.
b
D
E
e1
L
mm
0.50
0.46
0.03
0.55
0.47
0.62
0.55
1.02
0.95
0.65
0.30
0.22
Notes
1. Including plating thickness
2. The marking bar indicates the cathode
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
ISSUE DATE
03-04-16
03-04-17
SOD882
2003 Jun 23
EUROPEAN
PROJECTION
5
NXP Semiconductors
Product data sheet
Schottky barrier diode
BAT54L
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
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does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2003 Jun 23
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
613514/01/pp7
Date of release: 2003 Jun 23
Document order number: 9397 750 11307