High-reliability discrete products and engineering services since 1977 MCR100 SERIES SILICON CONTROLLED RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS. Rating Symbol Peak repetitive off-state voltage(1) (TJ = -40 to +110°C, sine wave, 50 to 60Hz, gate open) MCR100-3 MCR100-4 MCR100-5 MCR100-6 MCR100-7 MCR100-8 VDRM VRRM On-state RMS current (180° conduction angles, TC = 80°C) IT(RMS) Value Unit 100 200 300 400 500 600 V 0.8 A Peak non-repetitive surge current (half-cycle, sine wave, 60Hz, TJ = 25°C) ITSM Circuit fusing consideration (t = 8.3ms) I2t 0.415 A2s Forward peak gate power (pulse width ≤ 1.0µs, TA = 25°C) PGM 0.1 W Forward average gate power (t = 8.3ms, TA = 25°C) A 10 PG(AV) 0.10 W Forward peak gate current (pulse width ≤ 1.0µs, TA = 25°C) IGM 1.0 A Reverse peak gate voltage (pulse width ≤ 1.0µs, T A = 25°C) VGRM 5.0 V Operating junction temperature range @ rated VRRM and VDRM TJ -40 to +110 °C Storage temperature range Tstg -40 to +150 °C Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Symbol Maximum Unit Thermal resistance, junction to case Characteristic RӨJC 75 °C/W Thermal resistance, junction to ambient RӨJA 200 °C/W Lead solder temperature (lead length < 1/16” from case, 10s max) TL 260 °C Rev. 20130109 High-reliability discrete products and engineering services since 1977 MCR100 SERIES SILICON CONTROLLED RECTIFIERS ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Characteristic Symbol Min Typ Max Unit - - 10 100 µA - - 1.7 - 40 200 - 0.5 - 5.0 10 - 0.6 - 10 15 OFF CHARACTERISTICS Peak forward or reverse blocking current(2) (VAK = Rated VDRM or VRRM, RGK = 1kΩ) TC = 25°C TC = 110°C IDRM, IRRM ON CHARACTERISTICS Peak forward on-state voltage* (ITM = 1.0A peak, @ TA = 25°C) VTM Gate trigger current (continuous dc)(3) (VAK = 7V, RL = 100Ω, T C = 25°C) IGT Holding current (2) (VAK = 7V, initiating current = 20mA) TC = 25°C TC = -40°C IH Latch current (VAK = 7V, Ig = 200µA) TC = 25°C TC = -40°C IL Gate trigger voltage (continuous dc) (3) (VAK = 7V, RL = 100Ω) TC = 25°C TC = -40°C V µA mA mA VGT V - 0.62 - 0.8 1.2 20 35 - - - 50 DYNAMIC CHARACTERISTICS Critical rate of rise of off-state voltage (VD = rated VDRM, exponential waveform, RGK = 1000Ω, T J = 110°C) dv/dt Critical rate of rise of on-state current (IPK = 20A, PW = 10µsec, diG/dt = Igt = 20mA) di/dt V/µs A/µs Note 2: RGK = 1000Ω included in measurement. Note 3: Does not include RGK in measurement. * Pulse test: pulse width ≤ 1.0ms, duty cycle ≤ 1%. Rev. 20130109 High-reliability discrete products and engineering services since 1977 MCR100 SERIES SILICON CONTROLLED RECTIFIERS MECHANICAL CHARACTERISTICS Case: TO-92 Marking: Body painted, alpha-numeric Pin out: See below Rev. 20130109 High-reliability discrete products and engineering services since 1977 MCR100 SERIES SILICON CONTROLLED RECTIFIERS Rev. 20130109