MCR64 SERIES.aspx?ext=

High-reliability discrete products
and engineering services since 1977
MCR64 SERIES
SILICON CONTROLLED RECTIFIER
FEATURES

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Peak repetitive forward and reverse blocking voltage(1)
(TJ = 25 to +125°C, gate open)
MCR64-1
MCR64-2
MCR64-3
MCR64-4
MCR64-5
MCR64-6
MCR64-7
MCR64-8
MCR64-9
MCR64-10
Symbol
VRRM, VDRM
Value
25
50
100
200
300
400
500
600
700
800
Unit
Volts
Non-repetitive peak reverse blocking voltage
(t ≤ 5ms) (1)
MCR64-1
MCR64-2
MCR64-3
MCR64-4
MCR64-5
MCR64-6
MCR64-7
MCR64-8
MCR64-9
MCR64-10
Forward current RMS
VRSM
IT(RMS)
Peak surge current
(one cycle, 60Hz, TC = -40 to +125°C)
ITSM
Circuit fusing considerations
(t = 8.3ms)
I2t
35
75
150
300
400
500
600
700
800
900
55
550
1255
Volts
Amps
Amps
A2s
Peak gate power
PGM
20
Watts
Average gate power (Pulse width ≤ 2µs)
PG(AV)
0.5
Watts
Peak forward gate current
IGM
2
Amps
Forward peak gate voltage
Reverse peak gate voltage
VGFM
VGRM
10
Volts
Operating junction temperature range
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
30
In. lb.
Mounting torque
Note 1: VDRM and VRRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied
to the gate concurrently with a negative potential on the anode.
Rev. 20150306
MCR64 SERIES
SILICON CONTROLLED RECTIFIER
High-reliability discrete products
and engineering services since 1977
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Pressfit
Symbol
Maximum
RӨJC
Unit
°C/W
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Peak forward or reverse blocking current
(VAK = Rated VDRM or VRRM, gate open)
TC = 25°C
TC = 125°C
Symbol
IDRM, IRRM
Forward “on” voltage
(ITM = 175A peak)
VTM
Gate trigger current (continuous dc)
(VD = 12V, RL = 50Ω)
TC = 25°C
TC = -40°C
IGT
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 50Ω)
TC = 25°C
TC = -40°C
(VD = Rated VDRM, RL = 1000Ω, TJ = 125°C)
Holding current
(VD = 12V, RL = 50Ω, gate open)
Forward voltage application rate
(VD = rated VDRM, TJ = 125°C)
VGT
IH
dv/dt
Min.
Max.
Unit
-
10
2
µA
mA
-
2
-
40
75
0.2
3
3.5
-
-
60
50
-
Volts
mA
Volts
mA
V/µs
Rev. 20150306
High-reliability discrete products
and engineering services since 1977
MCR64 SERIES
SILICON CONTROLLED RECTIFIER
MECHANICAL CHARACTERISTICS
Case
TO-48
Marking
Body painted, alpha-numeric
Polarity
Cathode is stud
Rev. 20150306
High-reliability discrete products
and engineering services since 1977
MCR64 SERIES
SILICON CONTROLLED RECTIFIER
Rev. 20150306