High-reliability discrete products and engineering services since 1977 MCR65 SERIES SILICON CONTROLLED RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Peak repetitive forward and reverse voltage(1) (TJ = 25 to +125°C, gate open) MCR65-1 MCR65-2 MCR65-3 MCR65-4 MCR65-5 MCR65-6 MCR65-7 MCR65-8 MCR65-9 MCR65-10 Symbol VRRM, VDRM Value 25 50 100 200 300 400 500 600 700 800 Unit Volts Non-repetitive peak reverse blocking voltage (t ≤ 5ms) (1) MCR65-1 MCR65-2 MCR65-3 MCR65-4 MCR65-5 MCR65-6 MCR65-7 MCR65-8 MCR65-9 MCR65-10 Forward current RMS VRSM IT(RMS) Peak surge current (one cycle, 60Hz, TC = -40 to +125°C) ITSM Circuit fusing considerations (t = 8.3ms) I2t 35 75 150 300 400 500 600 700 800 900 55 550 1255 Volts Amps Amps A2s Peak gate power PGM 20 Watts Average gate power (Pulse width ≤ 2µs) PG(AV) 0.5 Watts Peak forward gate current IGM 2 Amps Forward peak gate voltage Reverse peak gate voltage VGFM VGRM 10 Volts Operating junction temperature range TJ -40 to +125 °C Storage temperature range Tstg -40 to +150 °C 30 In. lb. Mounting torque Note 1: VDRM and VRRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. Rev. 20130128 High-reliability discrete products and engineering services since 1977 MCR65 SERIES SILICON CONTROLLED RECTIFIERS THERMAL CHARACTERISTICS Characteristic Thermal resistance, junction to case Isolated stud Symbol Maximum RӨJC Unit °C/W 1.1 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Characteristic Peak forward or reverse blocking current (VAK = Rated VDRM or VRRM, gate open) TC = 25°C TC = 125°C Symbol IDRM, IRRM Forward “on” voltage (ITM = 175A peak) VTM Gate trigger current (continuous dc) (VD = 12V, RL = 50Ω) TC = 25°C TC = -40°C IGT Gate trigger voltage (continuous dc) (VD = 12V, RL = 50Ω) TC = 25°C TC = -40°C (VD = Rated VDRM, RL = 1000Ω, T J = 125°C) Holding current (VD = 12V, RL = 50Ω, gate open) Forward voltage application rate (VD = rated VDRM, TJ = 125°C) VGT IH dv/dt Min. Max. Unit - 10 2 µA mA - 2 - 40 75 0.2 3 3.5 - - 60 50 - Rev. 20130128 Volts mA Volts mA V/µs High-reliability discrete products and engineering services since 1977 MCR65 SERIES SILICON CONTROLLED RECTIFIERS MECHANICAL CHARACTERISTICS Case: TO-48 ISO Marking: Body painted, alpha-numeric Polarity: Cathode is stud Rev. 20130128