High-reliability discrete products and engineering services since 1977 MCR68 SERIES SILICON CONTROLLED RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Peak repetitive off-state voltage(1) (TJ = -40 to +125°C, gate open) MCR68-1 MCR68-2 MCR68-3 Value Unit 25 50 100 V VDRM VRRM Peak discharge current (2) ITM 300 A On-state RMS current (180° conduction angles, TC = 85°C) IT(RMS) 12 A Average on-state current (180° conduction angles, TC = 85°C) IT(AV) 8.0 A Peak non-repetitive surge current (half-cycle, sine wave, 60Hz, TJ = 125°C) ITSM Circuit fusing consideration (t = 8.3ms) I2t 40 Forward peak gate current (pulse width ≤ 1.0µs, TC = 85°C) IGM 2.0 A Forward peak gate power (pulse width ≤ 1.0µs, TC = 85°C) PGM 20 W Forward average gate power (t = 8.3ms, TC = 85°C) A 100 A2s PG(AV) 0.5 W Operating junction temperature range TJ -40 to +125 °C Storage temperature range Tstg -40 to +150 °C - 8.0 In. lb. Mounting torque Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Note 2: Ratings apply for tw = 1ms, THERMAL CHARACTERISTICS Characteristic Symbol Maximum Unit Thermal resistance, junction to case RӨJC 2.0 °C/W Thermal resistance, junction to ambient RӨJA 60 °C/W TL 260 °C Maximum lead temperature for soldering purposes 1/8” from case for 10s Rev. 20130115 High-reliability discrete products and engineering services since 1977 MCR68 SERIES SILICON CONTROLLED RECTIFIERS ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Characteristic Symbol Min Typ Max Unit - - 10 2.0 µA mA - 6.0 2.2 - V 2.0 7.0 30 - 0.65 1.5 0.2 0.40 - OFF CHARACTERISTICS Peak forward or reverse blocking current (VAK = Rated VDRM or VRRM, gate open) TJ = 25°C TJ = 125°C IDRM, IRRM ON CHARACTERISTICS Peak forward on-state voltage (ITM = 24A)(3) (ITM = 300A, tw = 1ms)(4) VTM Gate trigger current (continuous dc) (VD = 12V, RL = 100Ω) IGT Gate trigger voltage (continuous dc) (VD = 12V, RL = 100Ω) VGT Gate non-trigger voltage (VD = 12V, RL = 100Ω, T J = 125°C) VGD Holding current (VD = 12V, gate open, initiating current = 200mA) IH Latching current (VD = 12V, IG = 150mA) IL Gate controlled turn-on time(5) (VD = rated VDRM, IG = 150mA) (ITM = 24A peak) tgt mA V V mA 3.0 15 50 - - 60 - 1.0 - 10 - - - - 75 mA µs DYNAMIC CHARACTERISTICS Critical rate of rise of off-state voltage (VD = rated VDRM, exponential waveform, gate open, TJ = 125°C) dv/dt Critical rate of rise of on-state current (IG = 150mA, TJ = 125°C) di/dt V/µs A/µs Note 3: Pulse width≤ 300µs, duty cycle ≤ 2%. Note 4: Ratings apply for tw = 1ms. Note 5: The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance. Rev. 20130115 High-reliability discrete products and engineering services since 1977 MCR68 SERIES SILICON CONTROLLED RECTIFIERS MECHANICAL CHARACTERISTICS Case: TO-220AB Marking: Body painted, alpha-numeric Pin out: See below Rev. 20130115 High-reliability discrete products and engineering services since 1977 MCR68 SERIES SILICON CONTROLLED RECTIFIERS Rev. 20130115 High-reliability discrete products and engineering services since 1977 MCR68 SERIES SILICON CONTROLLED RECTIFIERS Rev. 20130115 High-reliability discrete products and engineering services since 1977 MCR68 SERIES SILICON CONTROLLED RECTIFIERS Rev. 20130115