Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBD354
Schottky barrier double diode
Product data sheet
Supersedes data of 2002 Aug 06
2003 Mar 25
NXP Semiconductors
Product data sheet
Schottky barrier double diode
FEATURES
PMBD354
PINNING
• Low forward voltage
PIN
• Small SMD package
1
• Low capacitance
cathode k1
2
anode a2
• Matched capacitance.
3
common connection a1, k2
DESCRIPTION
APPLICATIONS
• UHF mixer
• Sampling circuits
handbook, 2 columns
• Modulators
3
• Phase detection.
3
handbook, 2 columns
DESCRIPTION
1
Planar Schottky barrier double diode
in a SOT23 small plastic SMD
package.
1
Top view
2
2
MGC487
MGC421
MARKING
TYPE NUMBER
MARKING
CODE(1)
PMBD354
*V8
Fig.1
Simplified outline (SOT23) pin configuration and symbol.
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
−
4
V
IF
continuous forward current
−
30
mA
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
100
°C
2003 Mar 25
2
NXP Semiconductors
Product data sheet
Schottky barrier double diode
PMBD354
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.2
IF = 0.1 mA
350
mV
IF = 1 mA
450
mV
IF = 10 mA
600
mV
IR
reverse current
VR = 3 V; note 1; see Fig.3
0.25
μA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.4
1
pF
ΔCd
capacitance matching
f = 1 MHz; VR = 0
0.1
pF
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Refer to SOT23 standard mounting conditions.
2003 Mar 25
3
VALUE
UNIT
500
K/W
NXP Semiconductors
Product data sheet
Schottky barrier double diode
PMBD354
GRAPHICAL DATA
MLC795
2
handbook,10
halfpage
MLC796
10 4
handbook, halfpage
IR
(nA)
IF
(mA)
10 3
(1)
10 2
(2)
10
(1)
1
(3)
(2)
(3)
10
(4)
10−1
(4)
1
10−2
0
200
400
600
10 1
800
VF (mV)
(1)
(2)
(3)
(4)
Tamb = 100 °C.
Tamb = 60 °C.
Tamb = 25 °C.
Tamb = −40 °C.
Fig.2
Fig.3
MLC797
0.8
Cd
(pF)
0.7
0.6
0.5
0.4
1
2
3
V R (V) 4
f = 1 MHz; Tamb = 25 °C.
Diode capacitance as a function of reverse
voltage; typical values.
2003 Mar 25
2
V R (V)
3
(4) Tamb = −40 °C.
handbook, halfpage
Fig.4
1
(1) Tamb = 100 °C.
(2) Tamb = 60 °C.
(3) Tamb = 25 °C.
Forward current as a function of forward
voltage; typical values.
0
0
4
Reverse current as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
Schottky barrier double diode
PMBD354
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2003 Mar 25
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
5
NXP Semiconductors
Product data sheet
Schottky barrier double diode
PMBD354
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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Applications ⎯ Applications that are described herein for
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NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
2003 Mar 25
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
6
NXP Semiconductors
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Printed in The Netherlands
613514/02/pp7
Date of release: 2003 Mar 25
Document order number: 9397 750 10971