INTERSIL CD4515BMS

CD4514BMS
CD4515BMS
CMOS 4-Bit
Latch/4-to-16 Line Decoders
December 1992
Features
Pinout
• High-Voltage Types (20-Volt Rating)
CD4514BMS, CD4515BMS
TOP VIEW
• CD4514BMS Output “High” on Select
• CD4515BMS Output “Low” on Select
24 VDD
STROBE 1
DATA 1 2
23 INHIBIT
DATA 2 3
22 DATA 4
S7 4
21 DATA 3
• 100% Tested for Quiescent Current at 20V
S6 5
20 S10
• Maximum Input Current of 1µA at 18V Over Full Package Temperature Range; 100nA at 18V and 25oC
S5 6
19 S11
S4 7
18 S8
S3 8
17 S9
S2 9
16 S14
S1 10
15 S15
S0 11
14 S12
VSS 12
13 S13
• Strobed Input Latch
• Inhibit Control
• Noise Margin (Full Package-Temperature Range):
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
• 5V, 10V, and 15V Parametric Ratings
• Standardized, Symmetrical Output Characteristics
• Meets all Requirements of JEDEC Tentative Standard
No. 13B, "Standard Specifications for Description of
‘B’ Series CMOS Devices"
Functional Diagram
Applications
VDD = 24
VSS = 12
• Digital Multiplexing
• Address Decoding
• Hexadecimal/BCD Decoding
DATA 1
DATA 2
DATA 3
DATA 4
• Program-counter Decoding
• Control Decoder
Description
CD4514BMS and CD4515BMS consist of a 4-bit strobed
latch and a 4-to-16-line decoder. The latches hold the last
input data presented prior to the strobe transition from 1 to 0.
Inhibit control allows all outputs to be placed at
0(CD4514BMS) or 1(CD4515BMS) regardless of the state of
the data or strobe inputs.
2
3
21
22
STROBE
1
INHIBIT
23
LATCH
A
B
C
D
4 TO 16
DECODER
11
9
10
8
7
6
5
4
18
17
20
19
14
13
16
15
S0
S1
S2
S3
S4
S5
S6
S7
S8
S9
S10
S11
S12
S13
S14
S15
The decode truth table indicates all combinations of data
inputs and appropriate selected outputs.
These devices are similar to industry types MC14514 and
MC14515.
The CD4514BMS and CD4515BMS are supplied in these 24
lead outline packages:
Braze Seal DIP
Frit Seal DIP
Ceramic Flatpack
H4V
H1Z
H4P
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
7-1188
File Number
3195
Specifications CD4514BMS, CD4515BMS
Absolute Maximum Ratings
Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
Thermal Resistance . . . . . . . . . . . . . . . .
θja
θjc
Ceramic DIP and FRIT Package . . . . . 80oC/W
20oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70oC/W
20oC/W
o
Maximum Package Power Dissipation (PD) at +125 C
For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW
For TA = +100oC to +125oC (Package Type D, F, K). . . . . . Derate
Linearity at 12mW/oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
Input Leakage Current
Input Leakage Current
SYMBOL
IDD
IIL
IIH
CONDITIONS (NOTE 1)
VDD = 20V, VIN = VDD or GND
LIMITS
GROUP A
SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
-
10
µA
2
+125 C
-
1000
µA
VDD = 18V, VIN = VDD or GND
3
-55oC
-
10
µA
VIN = VDD or GND
1
+25oC
-100
-
nA
2
+125oC
-1000
-
nA
VDD = 18V
3
-55oC
-100
-
nA
VDD = 20
1
+25oC
-
100
nA
2
+125oC
-
1000
nA
3
-55oC
-
100
nA
-
50
mV
VIN = VDD or GND
VDD = 20
VDD = 18V
o
Output Voltage
VOL15
VDD = 15V, No Load
1, 2, 3
+25oC,
+125oC,
-55oC
Output Voltage
VOH15
VDD = 15V, No Load (Note 3)
1, 2, 3
+25oC, +125oC, -55oC 14.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1
+25oC
0.53
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1
+25oC
1.4
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1
+25oC
3.5
-
mA
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1
+25oC
-
-0.53
mA
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1
+25oC
-
-1.8
mA
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1
+25oC
-
-1.4
mA
mA
Output Current (Source)
IOH15
VDD = 15V, VOUT = 13.5V
1
+25oC
-
-3.5
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10µA
1
+25oC
-2.8
-0.7
V
P Threshold Voltage
VPTH
VSS = 0V, IDD = 10µA
1
+25oC
0.7
2.8
V
VDD = 2.8V, VIN = VDD or GND
7
+25oC
VDD = 20V, VIN = VDD or GND
7
+25oC
VDD = 18V, VIN = VDD or GND
8A
+125oC
VDD = 3V, VIN = VDD or GND
8B
-55oC
Functional
F
VOH > VOL <
VDD/2 VDD/2
V
Input Voltage Low
(Note 2)
VIL
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25oC, +125oC, -55oC
-
1.5
V
Input Voltage High
(Note 2)
VIH
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25oC, +125oC, -55oC
3.5
-
V
Input Voltage Low
(Note 2)
VIL
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25oC, +125oC, -55oC
-
4
V
Input Voltage High
(Note 2)
VIH
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25oC, +125oC, -55oC
11
-
V
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs.
7-1189
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
Specifications CD4514BMS, CD4515BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Propagation Delay
Strobe or Data
Propagation Delay
Inhibit
Transition Time
SYMBOL
TPHL1
TPLH1
CONDITIONS (NOTE 1, 2)
GROUP A
SUBGROUPS TEMPERATURE
VDD = 5V, VIN = VDD or GND
9
10, 11
TPHL2
TPLH2
VDD = 5V, VIN = VDD or GND
TTHL
TTLH
VDD = 5V, VIN = VDD or GND
9
10, 11
9
10, 11
+25oC
+125oC,
-55oC
+25oC
+125oC,
-55oC
+25oC
+125oC,
-55oC
LIMITS
MIN
MAX
UNITS
-
970
ns
-
1310
ns
-
500
ns
-
675
ns
-
200
ns
-
270
ns
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55oC and +125oC limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
IDD
VDD = 5V, VIN = VDD or GND
1, 2
-55oC, +25oC
-
5
µA
+125oC
-
150
µA
VDD = 10V, VIN = VDD or GND
VDD = 15V, VIN = VDD or GND
1, 2
1, 2
-55 C, +25 C
-
10
µA
+125oC
-
300
µA
-
10
µA
o
-55oC,
o
+25oC
-
600
µA
Output Voltage
VOL
VDD = 5V, No Load
1, 2
+25oC, +125oC,
-55oC
-
50
mV
Output Voltage
VOL
VDD = 10V, No Load
1, 2
+25oC, +125oC,
-55oC
-
50
mV
Output Voltage
VOH
VDD = 5V, No Load
1, 2
+25oC, +125oC,
-55oC
4.95
-
V
Output Voltage
VOH
VDD = 10V, No Load
1, 2
+25oC, +125oC,
-55oC
9.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1, 2
+125oC
0.36
-
mA
-55oC
0.64
-
mA
+125oC
0.9
-
mA
-55oC
1.6
-
mA
oC
+125
Output Current (Sink)
Output Current (Sink)
Output Current (Source)
Output Current (Source)
Output Current (Source)
Output Current (Source)
IOL10
IOL15
IOH5A
IOH5B
IOH10
IOH15
VDD = 10V, VOUT = 0.5V
VDD = 15V, VOUT = 1.5V
VDD = 5V, VOUT = 4.6V
1, 2
1, 2
1, 2
VDD = 5V, VOUT = 2.5V
1, 2
VDD = 10V, VOUT = 9.5V
VDD =15V, VOUT = 13.5V
1, 2
1, 2
+125oC
2.4
-
mA
-55oC
4.2
-
mA
+125oC
-
-0.36
mA
-55oC
-
-0.64
mA
+125oC
-
-1.15
mA
-55oC
-
-2.0
mA
+125oC
-
-0.9
mA
-55oC
-
-1.6
mA
+125oC
-
-2.4
mA
-55oC
-
-4.2
mA
Input Voltage Low
VIL
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25oC, +125oC,
-55oC
-
3
V
Input Voltage High
VIH
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25oC, +125oC,
-55oC
+7
-
V
7-1190
Specifications CD4514BMS, CD4515BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETER
SYMBOL
Propagation Delay
Strobe or Datat
TPHL1
TPLH1
Propagation Delay
Inhibit
TPHL2
TPLH2
Transition Time
Minimum Data Setup
Time
Minimum Strobe Pulse
Width
CONDITIONS
VDD = 10V
TS
CIN
MAX
UNITS
1, 2, 3
+25oC
-
370
ns
o
1, 2, 3
+25 C
-
270
ns
1, 2, 3
+25oC
-
220
ns
1, 2, 3
+25
oC
-
170
ns
VDD = 10V
1, 2, 3
+25oC
-
100
ns
VDD = 15V
1, 2, 3
+25oC
-
80
ns
1, 2, 3
+25
oC
-
150
ns
VDD = 10V
1, 2, 3
+25o
C
-
70
ns
VDD = 15V
1, 2, 3
+25oC
-
40
ns
VDD = 5V
1, 2, 3
+25
oC
-
250
ns
VDD = 10V
1, 2, 3
+25oC
-
100
ns
o
+25 C
-
75
ns
+25o
-
7.5
pF
VDD = 15V
Input Capacitance
MIN
VDD = 15V
VDD = 5V
TW
TEMPERATURE
VDD = 10V
VDD = 15V
TTHL
TTLH
NOTES
1, 2, 3
Any Input
1, 2
C
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
SYMBOL
IDD
N Threshold Voltage
VNTH
N Threshold Voltage
Delta
∆VTN
P Threshold Voltage
VTP
P Threshold Voltage
Delta
∆VTP
Functional
F
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
1, 4
+25oC
-
25
µA
1, 4
+25oC
-2.8
-0.2
V
VDD = 10V, ISS = -10µA
1, 4
+25oC
-
±1
V
VSS = 0V, IDD = 10µA
1, 4
+25oC
0.2
2.8
V
1, 4
+25oC
-
±1
V
1
+25oC
VOH >
VDD/2
VOL <
VDD/2
V
1, 2, 3, 4
+25oC
-
1.35 x
+25oC
Limit
ns
VDD = 20V, VIN = VDD or GND
VDD = 10V, ISS = -10µA
VSS = 0V, IDD = 10µA
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
3. See Table 2 for +25oC limit.
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC
PARAMETER
Supply Current - MSI-2
Output Current (Sink)
Output Current (Source)
SYMBOL
DELTA LIMIT
IDD
± 1.0µA
IOL5
± 20% x Pre-Test Reading
IOH5A
± 20% x Pre-Test Reading
7-1191
Specifications CD4514BMS, CD4515BMS
TABLE 6. APPLICABLE SUBGROUPS
MIL-STD-883
METHOD
GROUP A SUBGROUPS
Initial Test (Pre Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
100% 5004
1, 7, 9, Deltas
100% 5004
1, 7, 9
100% 5004
1, 7, 9, Deltas
CONFORMANCE GROUP
PDA (Note 1)
Interim Test 3 (Post Burn-In)
PDA (Note 1)
Final Test
Group B
IDD, IOL5, IOH5A
100% 5004
2, 3, 8A, 8B, 10, 11
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Subgroup B-5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroup B-6
Sample 5005
1, 7, 9
Sample 5005
1, 2, 3, 8A, 8B, 9
Group A
Group D
READ AND RECORD
Subgroups 1, 2, 3, 9, 10, 11
Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUPS
Group E Subgroup 2
TEST
READ AND RECORD
MIL-STD-883
METHOD
PRE-IRRAD
POST-IRRAD
PRE-IRRAD
POST-IRRAD
5005
1, 7, 9
Table 4
1, 9
Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
OSCILLATOR
FUNCTION
OPEN
GROUND
VDD
Static Burn-In 1
(Note 1)
4-11, 13-20
1-3, 12, 21-23
24
Static Burn-In 2
(Note 1)
4-11, 13-20
12
1-3, 21-24
Dynamic BurnIn (Note 1)
-
2, 3, 12
21, 22, 24
9V ± -0.5V
50kHz
25kHz
4-11, 13-20
1
23
Irradiation
(Note 2)
NOTES:
1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V
2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD
= 10V ± 0.5V
7-1192
CD4514BMS, CD4515BMS
Logic Diagram
A B C D
VDD
11 S0
A B C D
9
S1
A B C D
10 S2
A B C D
VSS
DATA 1 2
DATA 2 3
S
Q
R
Q
*
DATA 3 21
S
Q
R
Q
S
Q
R
Q
S
Q
R
Q
*
DATA 4 22
1
S3
7
S4
6
S5
5
S6
4
S7
A B C D
*
A
A B C D
A B C D
B
A B C D
A B C D
18 S8
*
STROBE
8
A B C D
C
17 S9
A B C D
20 S10
A B C D
D
19 S11
A B C D
*
14 S12
A B C D
*
13 S13
A B C D
INHIBIT 23
16 S14
A B C D
15 S15
THESE INVENTERS USED ONLY ON CD4515BMS
* All inputs protected by CMOS protection network.
FIGURE 1. LOGIC DIAGRAM
TRUTH TABLE
DECODER INPUTS
INHIBIT
D
C
B
A
SELECTED OUTPUT
CD4514BMS = LOGIC 1 (HIGH)
CD4515BMS = LOGIC 0 (LOW)
0
0
0
0
0
S0
0
0
0
0
1
S1
0
0
0
1
0
S2
0
0
0
1
1
S3
0
0
1
0
0
S4
0
0
1
0
1
S5
0
0
1
1
0
S6
0
0
1
1
1
S7
0
1
0
0
0
S8
0
1
0
0
1
S9
0
1
0
1
0
S10
0
1
0
1
1
S11
0
1
1
0
0
S12
0
1
1
0
1
S13
0
1
1
1
0
S14
0
1
1
1
1
S15
1
X
X
X
X
1 = HIGH LEVEL
0 = LOW LEVEL
7-1193
All Outputs = 0, CD4514BMS
All Outputs = 1, CD4515BMS
X = DON’T CARE
CD4514BMS, CD4515BMS
AMBIENT TEMPERATURE (TA) = +25oC
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
25
20
15
10V
10
5
5V
0
5
10
AMBIENT TEMPERATURE (TA) = +25oC
15.0
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
12.5
10.0
10V
7.5
5.0
2.5
15
5V
0
5
10
15
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
GATE-TO-SOURCE VOLTAGE (VGS) = -5V
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
-15
-10
-5
0
-5
-10
-15
-10V
-20
-25
-15V
-30
STROBE OR DATA
PROPAGATION DELAY TIME (tPHL, tPLH) - ns
FIGURE 4. TYPICAL OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
AMBIENT TEMPERATURE (TA) = +25oC
550
SUPPLY VOLTAGE (VDD) = 5V
500
450
400
350
300
250
200
10V
150
15V
100
50
0
20
40
60
80
LOAD CAPACITANCE (CL) (pF)
FIGURE 6. TYPICAL STROBE OR DATA PROPAGATION
DELAY TIME vs LOAD CAPACITANCE
AMBIENT TEMPERATURE (TA) = +25oC
100
0
0
GATE-TO-SOURCE VOLTAGE (VGS) = -5V
-5
-10V
-15V
-10
-15
FIGURE 5. MINIMUM OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
INHIBIT PROPAGATION DELAY TIME (tPHL, tPLH) - ns
AMBIENT TEMPERATURE (TA) = +25oC
0
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
-15
-10
-5
FIGURE 3. MINIMUM OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
30
OUTPUT LOW (SINK) CURRENT (IOL) (mA)
OUTPUT LOW (SINK) CURRENT (IOL) (mA)
Typical Performance Characteristics
AMBIENT TEMPERATURE (TA) = +25oC
350
300
SUPPLY VOLTAGE (VDD) = 5V
250
200
150
10V
100
15V
50
0
20
40
60
80
LOAD CAPACITANCE (CL) (pF)
100
FIGURE 7. TYPICAL INHIBIT PROPAGATION DELAY TIME vs
LOAD CAPACITANCE
7-1194
CD4514BMS, CD4515BMS
(Continued)
STROBE OR DATA
PROPAGATION DELAY TIME (tPLH, tPHL) - ns)
Typical Performance Characteristics
TRANSITION TIME (fTHL, fTLH) (ns)
AMBIENT TEMPERATURE (TA) = +25oC
200
SUPPLY VOLTAGE (VDD) = 5V
150
100
10V
15V
50
0
0
20
AMBIENT TEMPERATURE (TA) = +25oC
LOAD CAPACITANCE (CL) = 50pF
500
400
300
200
100
0
0
40
60
80
100
LOAD CAPACITANCE (CL) (pF)
FIGURE 8. TYPICAL LOW-TO-HIGH TRANSITION TIME vs
LOAD CAPACITANCE
106
10
15
20
LOAD CAPACITANCE (CL) (pF)
FIGURE 9. TYPICAL STROBE OR DATA PROPAGATION
DELAY TIME vs SUPPLY VOLTAGE
AMBIENT TEMPERATURE (TA) = +25oC
SUPPLY VOLTAGE
(VDD) = 15V
105
POWER DISSIPATION (PD) - µW
5
10V
10V
104
5V
103
102
10
CL = 50pF
CL = 15pF
2
1
4 6 8
2
4
68
2
101
102
FREQUENCY (f) (kHz)
4
6 8
2
4 68
103
10. TYPICAL POWER DISSIPATION vs FREQUENCY
Waveforms
DATA
50%
tr, tf = 20ns
tS
STROBE
50%
tW
FIGURE 11. WAVEFORMS FOR SETUP TIME AND STROBE
PULSE WIDTH
7-1195
104
25
CD4514BMS, CD4515BMS
Chip Dimensions and Pad Layouts
0
10
20
30
40
50
60
70
80
90
100 110 112
74
70
60
50
71-79
(1.804-2.006)
40
30
20
10
0
4-10
(0.102-0.254)
109-117
(2.769-2.971)
Dimensions in parentheses are in milimeters and are
derived from the basic inch dimensions as indicated.
Grid graduations are in mils (10-3 inch.)
METALLIZATION:
PASSIVATION:
Thickness: 11kÅ − 14kÅ,
AL.
10.4kÅ - 15.6kÅ, Silane
BOND PADS: 0.004 inches X 0.004 inches MIN
DIE THICKNESS: 0.0198 inches - 0.0218 inches
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