Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D087
BAT120 series
Schottky barrier double diodes
Product data sheet
Supersedes data of 2001 Aug 27
2003 Aug 04
NXP Semiconductors
Product data sheet
Schottky barrier double diodes
BAT120 series
FEATURES
PINNING
• Low switching losses
BAT120
PIN
• Capability of absorbing very high surge current
• Fast recovery time
• Guard ring protected
• Plastic SMD package.
A
C
S
1
k1
a1
a1
2
n.c.
n.c.
n.c.
3
k2
a2
k2
4
a1, a2
k1, k2
k1, a2
APPLICATIONS
• Low power switched-mode power supplies
• Rectification
4
handbook, halfpage
• Polarity protection.
DESCRIPTION
Planar Schottky barrier double diodes encapsulated in a
SOT223 plastic SMD package.
MARKING
1
TYPE NUMBER
MARKING CODE
BAT120A
AT120A
BAT120C
AT120C
BAT120S
AT120S
3
MGL171
Simplified outline (SOT223) and pin
configuration.
a. BAT120A.
4
1
3
2 n.c.
MGL172
b. BAT120C.
Fig.2 BAT120 diode configurations and symbols.
2003 Aug 04
2
3
MSB002 - 1
4
1
2 n.c.
Top view
Fig.1
4
2
1
3
2 n.c.
c. BAT120S.
MGL173
NXP Semiconductors
Product data sheet
Schottky barrier double diodes
BAT120 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
−
25
V
−
1
A
−
10
A
−
0.5
A
storage temperature
−65
+150
°C
junction temperature
−
125
°C
operating ambient temperature
−65
+125
°C
VR
continuous reverse voltage
IF
continuous forward current
IFSM
non-repetitive peak forward current
tp < 10 ms; half sinewave;
JEDEC method
IRSM
non-repetitive peak reverse current
tp = 100 μs
Tstg
Tj
Tamb
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
IR
Cd
forward voltage
reverse current
diode capacitance
see Fig.3
IF = 100 mA
260
300
mV
IF = 1 A
400
450
mV
VR = 20 V; note 1; see Fig.4
80
500
μA
VR = 25 V; note 1; see Fig.4
−
1
mA
VR = 20 V; Tj = 100 °C; note 1
−
10
mA
f = 1 MHz; VR = 4 V; see Fig.5
100
−
pF
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction to ambient
note 1
100
K/W
Note
1. Refer to SOT223 standard mounting conditions.
2003 Aug 04
3
NXP Semiconductors
Product data sheet
Schottky barrier double diodes
BAT120 series
GRAPHICAL DATA
MBL886
handbook,
4
10halfpage
MHB970
105
handbook, halfpage
IR
IF
(mA)
(1)
(μA)
(2)
104
103
(3)
103
(1)
(2)
102
(3)
(4)
(4)
102
10
10
1
1
0
200
400
600
800
0
10
20
VR (V)
30
VF (mV)
(1) Tamb = 125 °C.
(2) Tamb = 100 °C.
Fig.3
(3) Tamb = 75 °C.
(4) Tamb = 25 °C.
(1) Tamb = 125 °C.
(2) Tamb = 100 °C.
Forward current as a function of forward
voltage; typical values.
Fig.4
MBK571
103
handbook, halfpage
Cd
(pF)
102
10
0
10
20
VR (V)
30
f = 1 MHz; Tamb = 25 °C.
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
2003 Aug 04
4
(3) Tamb = 75 °C.
(4) Tamb = 25 °C.
Reverse current as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
Schottky barrier double diodes
BAT120 series
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
SOT223
2003 Aug 04
REFERENCES
IEC
JEDEC
EIAJ
SC-73
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
NXP Semiconductors
Product data sheet
Schottky barrier double diodes
BAT120 series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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above those given in the Characteristics sections of this
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
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specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2003 Aug 04
6
NXP Semiconductors
Customer notification
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Printed in The Netherlands
613514/04/pp7
Date of release: 2003 Aug 04
Document order number: 9397 750 11054
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