Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D102
BAT854W series
Schottky barrier (double) diodes
Product data sheet
2001 Feb 27
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
FEATURES
BAT854W series
PINNING
• Very low forward voltage
• Very low reverse current
• Guard ring protected
PIN
3
BAT854W
• Very small SMD plastic package.
APPLICATIONS
• Ultra high-speed switching
• Protection circuits
• Low power consumption
applications (e.g. hand-held
applications).
1
1
a
2
n.c.
3
k
Fig.2
1
k1
2
k2
3
a1,a2
BAT854W single diode
configuration (symbol).
3
BAT854CW
1
a1
2
a2
3
k1, k2
1
Planar Schottky barrier diodes
encapsulated in a SOT323 very small
SMD plastic package. Single diodes
and double diodes with different
pinning are available.
2
MLC360
Fig.3
BAT854SW
DESCRIPTION
2
n.c.
MLC357
BAT854AW
• Voltage clamping
• Blocking diodes
SYMBOL
1
a1
2
k2
3
k1, a2
BAT854AW diode
configuration (symbol).
3
1
2
MARKING
MLC359
TYPE NUMBER
MARKING
CODE
BAT854W
81
BAT854AW
82
BAT854CW
83
BAT854SW
84
3
handbook, 2 columns
1
Fig.4
BAT854CW diode
configuration (symbol).
2
Top view
3
MBC870
1
2
MLC358
Fig.1
2001 Feb 27
Simplified outline
SOT323 and pin
configuration.
2
Fig.5
BAT854SW diode
configuration (symbol).
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
BAT854W series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
−
40
V
−
200
mA
−
300
mA
−
1
A
storage temperature
−65
+150
°C
junction temperature
−
150
°C
operating ambient temperature
−65
+150
°C
VR
continuous reverse voltage
IF
continuous forward current
IFRM
repetitive peak forward current
tp ≤ 1 s; δ ≤ 0.5
IFSM
non-repetitive peak forward current
t = 8.3 ms half sinewave;
JEDEC method
Tstg
Tj
Tamb
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
continuous forward voltage
see Fig.6
IF = 0.1 mA
200
−
mV
IF = 1 mA
260
−
mV
IF = 10 mA
340
−
mV
IF = 30 mA
−
420
mV
IF = 100 mA
−
550
mV
IR
continuous reverse current
VR = 25 V; note 1; see Fig.7
−
0.5
μA
Cd
diode capacitance
VR = 1 V; f = 1 MHz; see Fig.8
−
20
pF
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient note 1
Note
1. Refer to SOT323 standard mounting conditions.
2001 Feb 27
3
VALUE
UNIT
625
K/W
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
BAT854W series
GRAPHICAL DATA
MLD546
103
handbook, halfpage
MLD547
103
handbook, halfpage
IF
(mA)
IR
(μA)
102
102
(1)
(2)
10
10
(1)
(2)
(3)
1
1
(3)
10−1
0
0.4
0.8
VF (V)
10−1
1.2
0
10
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.6
Fig.7
Forward current as a function of forward
voltage; typical values.
MLD548
20
Cd
handbook, halfpage
(pF)
16
12
8
4
0
10
0
20
30
VR (V)
40
f = 1 MHz; Tamb = 25 °C.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
2001 Feb 27
4
20
30
VR (V)
40
Reverse current as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
BAT854W series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
2001 Feb 27
REFERENCES
IEC
JEDEC
EIAJ
SC-70
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
BAT854W series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2001 Feb 27
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
613514/01/pp7
Date of release: 2001 Feb 27
Document order number: 9397 750 07935
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