High-reliability discrete products and engineering services since 1977 MCR72 SERIES SILICON CONTROLLED RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS. Rating Symbol Peak repetitive off-state voltage(1) (TJ = -40 to +110°C, sine wave, 50 to 60Hz, gate open) MCR72-1 MCR72-2 MCR72-3 MCR72-4 MCR72-5 MCR72-6 MCR72-7 MCR72-8 VDRM VRRM On-state RMS current (180° conduction angles, TC = 83°C) IT(RMS) Value Unit 25 50 100 200 300 400 500 600 V 8.0 A Peak non-repetitive surge current (half-cycle, sine wave, 60Hz, TJ = 110°C) ITSM Circuit fusing consideration (t = 8.3ms) I2t 40 A2s Forward peak gate voltage (t ≤ 10µs, T C = 83°C) VGM ±5.0 V Forward peak gate current (t ≤ 10µs, TC = 83°C) IGM 1.0 A Forward peak gate power (pulse width ≤ 10µs, TC = 83°C) PGM 5.0 W Average gate power (t = 8.3ms, TC = 83°C) A 100 PG(AV) 0.75 W Operating junction temperature range TJ -40 to +110 °C Storage temperature range Tstg -40 to +150 °C - 8.0 In. lb. Mounting torque Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol Maximum Unit Thermal resistance, junction to case RӨJC 2.2 °C/W Thermal resistance, junction to ambient RӨJA 60 °C/W Lead solder temperature (lead length 1/8” from case, 10s max) TL 260 °C Rev. 20130115 High-reliability discrete products and engineering services since 1977 MCR72 SERIES SILICON CONTROLLED RECTIFIERS ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Characteristic Symbol Min Typ Max Unit - - 10 500 µA - 1.7 2.0 - 30 200 - 0.5 1.5 0.1 - - - - 6.0 - 1.0 - - 10 - OFF CHARACTERISTICS Peak forward or reverse blocking current(2) (VAK = Rated VDRM or VRRM, RGK = 1kΩ) TC = 25°C TC = 110°C IDRM, IRRM ON CHARACTERISTICS Peak forward on-state voltage (ITM = 16A, pulse width ≤ 1ms, duty cycle ≤ 2%) VTM Gate trigger current (continuous dc)(3) (VD = 12V, RL = 100Ω) IGT Gate trigger voltage (continuous dc) (3) (VD = 12V, RL = 100Ω) VGT Gate non-trigger voltage (VD = 12V, RL = 100Ω, T J = 110°C) VGD Holding current (VD = 12V, gate open, initiating current = 200mA) IH Gate controlled turn-on time (VD = Rated VDRM, ITM = 16A, IG = 2mA) tgt V µA V V mA µs DYNAMIC CHARACTERISTICS Critical rate of rise of off-state voltage (VD = rated VDRM, RGK = 1kΩ, T J = 110°C, exponential waveform) dv/dt V/µs Note 2. Ratings apply for negative gate voltage or RGK = 1kΩ. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested wit h a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. Note 3: RGK current not included in measurement. Rev. 20130115 High-reliability discrete products and engineering services since 1977 MCR72 SERIES SILICON CONTROLLED RECTIFIERS MECHANICAL CHARACTERISTICS Case: TO-220AB Marking: Body painted, alpha-numeric Pin out: See below Rev. 20130115 High-reliability discrete products and engineering services since 1977 MCR72 SERIES SILICON CONTROLLED RECTIFIERS Rev. 20130115