Transistors 2SD0874, 2SD0874A (2SD874, 2SD874A) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A) Unit: mm ■ Features 4.5±0.1 1.6±0.2 ■ Absolute Maximum Ratings Ta = 25°C 1.5±0.1 Rating Unit VCBO 30 V 2SD0874A VCEO Emitter-base voltage (Collector open) VEBO 25 V IC 1 A Peak collector current ICP 1.5 A PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector power dissipation 2.5±0.1 3˚ 50 5 45˚ 3.0±0.15 V Collector current * 3˚ 60 Collector-emitter voltage 2SD0874 (Base open) 2SD0874A 0.4±0.04 0.4 max. Symbol 2SD0874 3 2 0.5±0.08 2.6±0.1 Parameter 0.4±0.08 1.0+0.1 –0.2 1 Collector-base voltage (Emitter open) 1.5±0.1 4.0+0.25 –0.20 • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) • Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 1: Base 2: Collector 3: Emitter MiniP3-F1 Package Marking Symbol: • 2SD0874: Z • 2SD0874A: Y Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) 2SD0874 Collector-emitter voltage (Base open) 2SD0874 Conditions VCBO IC = 10 µA, IE = 0 VCEO IC = 2 mA, IB = 0 VEBO IE = 10 µA, IC = 0 ICBO VCB = 20 V, IE = 0 2SD0874A Collector-base cutoff current (Emitter open) 0.1 µA 0.2 0.4 V IC = 500 mA, IB = 50 mA 0.85 1.2 VCB = 10 V, IE = −50 mA, f = 200 MHz 200 VCE = 5 V, IC = 1 A 50 IC = 500 mA, IB = 50 mA VBE(sat) hFE2 fT VCB = 10 V, IE = 0, f = 1 MHz Cob V 340 VCE(sat) Collector output capacitance (Common base, input open circuited) V 5 85 Collector-emitter saturation voltage *1 Transition frequency Unit V 25 VCE = 10 V, IC = 500 mA hFE1 *2 Base-emitter saturation voltage Max 50 Forward current transfer ratio *1 *1 Typ 30 60 2SD0874A Emitter-base voltage (Collector open) Min V MHz 20 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R hFE1 85 to 170 120 to 240 S 170 to 340 Note) The part numbers in the parenthesis show conventional part number. Publication date: November 2002 SJC00197CED 1 2SD0874, 2SD0874A IC VCE Ta = 25°C IB = 10 mA 1.25 Collector current IC (A) 1.0 0.8 0.6 0.4 9 mA 8 mA 7 mA 6 mA 5 mA 1.00 0.75 4 mA 3 mA 0.50 2 mA 0.25 0.2 20 40 60 0 80 100 120 140 160 0 2 VBE(sat) IC Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) Ta = −25°C 75°C 0.1 0.1 1 300 Ta = 75°C 200 25°C −25°C 100 0.1 10 Collector current IC (A) 0.01 0.001 0.01 0.1 30 20 ICP 1 IC t=1s DC 0.1 10 100 0.01 0.1 1 10 100 Collector-emitter voltage VCE (V) SJC00197CED 1 10 160 120 80 40 0 −1 −10 Emitter current IE (mA) Single pulse TC = 25°C 2SD0874 Collector output capacitance C (pF) (Common base, input open circuited) ob 10 Collector current IC (A) 40 Collector-base voltage VCB (V) 2 1 Safe operation area 10 −25°C 0.1 fT I E 400 0 0.01 10 IE = 0 f = 1 MHz Ta = 25°C 1 Ta = 75°C 25°C 200 V = 10 V CB Ta = 25°C 500 Cob VCB 0 1 Collector current IC (A) VCE = 10 V Collector current IC (A) 50 10 IC / IB = 10 hFE IC 25°C 0.01 0.01 8 600 IC / IB = 10 10 1 6 10 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 100 4 Transition frequency fT (MHz) 0 1 mA 2SD0874A Collector power dissipation PC (W) Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness 1.2 0 VCE(sat) IC 1.50 Collector-emitter saturation voltage VCE(sat) (V) PC Ta 1.4 −100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL