Transistor 2SA1674 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 0.2 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Allowing supply with the radial taping. 1.0 1.0 ● 0.5 4.5±0.1 ■ Features ● (1.45) (Ta=25˚C) +0.1 0.45–0.05 * Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –5 V Peak collector current ICP –1.5 A Collector current IC –1 A Collector power dissipation (TC=25˚C) PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion 1 2.5±0.5 2 3 2.5±0.1 Symbol +0.1 2.5±0.5 Parameter 0.45–0.05 ■ Absolute Maximum Ratings Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. or more, and the board 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 0.65 max. 0.45+–0.1 0.05 (HW type) ■ Electrical Characteristics (Ta=25˚C) Symbol Parameter Conditions min typ max Unit – 0.1 µA Collector cutoff current ICBO VCB = –40V, IE = 0 Collector to base voltage VCBO IC = –10µA, IE = 0 –80 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –80 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 V VCE = –2V, IC = –100mA 120 hFE1 Forward current transfer ratio *1 –500mA*2 340 hFE2 VCE = –2V, IC = Collector to emitter saturation voltage VCE(sat) IC = –500mA, IB = –50mA*2 60 – 0.2 – 0.3 V Base to emitter saturation voltage VBE(sat) IC = –500mA, IB = –50mA*2 – 0.85 –1.2 V Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 120 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 15 MHz 30 *2 *1h FE1 pF Pulse measurement Rank classification Rank R S hFE1 120 ~ 240 170 ~ 340 1 Transistor 2SA1674 IC — VCE 1.0 0.8 Ta=25˚C –1.0 IB=–8mA –7mA Collector current IC (A) –6mA – 0.8 0.6 –4mA – 0.6 0.4 –3mA 0.2 –2mA IC/IB=10 –3 –1 – 0.3 Ta=75˚C 25˚C – 0.1 –25˚C – 0.01 – 0.2 –1mA – 0.003 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –10 –3 25˚C 75˚C – 0.3 – 0.1 – 0.03 –1 –3 –10 Collector current IC (A) IE=0 f=1MHz Ta=25˚C 50 40 30 20 10 0 –1 –3 –10 –10 – 0.001 – 0.01 – 0.03 – 0.1 – 0.3 –30 200 450 350 300 Ta=75˚C 200 25˚C 150 –25˚C –100 Collector to base voltage VCB (V) –3 –10 VCB=–10V Ta=25˚C 180 400 250 –1 Collector current IC (A) fT — IE 100 50 160 140 120 100 80 60 40 20 0 – 0.01 – 0.03 – 0.1 – 0.3 0 –1 –3 Collector current IC (A) Cob — VCB 60 –8 VCE=–2V Forward current transfer ratio hFE –30 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –6 500 IC/IB=10 –1 –4 hFE — IC –100 Ta=–25˚C –2 Collector to emitter voltage VCE (V) VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) –10 – 0.03 – 0.4 0 Collector output capacitance Cob (pF) –5mA Transition frequency fT (MHz) Collector power dissipation PC (W) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 VCE(sat) — IC –1.2 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.2 –10 1 3 10 30 Emitter current IE (mA) 100