Power Transistors 2SC3496, 2SC3496A Silicon NPN triple diffusion planar type For power switching Unit: mm 1.0±0.1 Collector-base voltage (Emitter open) Rating Unit VCBO 900 V 2SC3496 2SC3496A 1 000 900 VCES V Collector-emitter voltage 2SC3496 (Base open) 2SC3496A VCEO Emitter-base voltage (Collector open) VEBO 7 Base current IB 0.3 A Collector current IC 1 A Peak collector current ICP 2 A Collector power PC 30 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1: Base 2: Collector 3: Emitter N-G1 Package 1 000 800 V 900 Ta = 25°C 3.0+0.4 –0.2 (6.5) Collector-emitter voltage 2SC3496 (E-B short) 2SC3496A dissipation 2 (1.5) Symbol 0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0) 1.3 3 (7.6) 1 Parameter 0 to 0.4 4.4±0.5 1.5+0 –0.4 4.4±0.5 ■ Absolute Maximum Ratings TC = 25°C 14.4±0.5 6.0±0.2 2.0±0.5 • High-speed switching • High collector-base voltage (Emitter open) VCBO • Satisfactory linearity of forward current transfer ratio hFE • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 3.4±0.3 10.0±0.3 1.5±0.1 ■ Features 8.5±0.2 Note) Self-supported type package is also prepared. V 1.3 ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) 2SC3496 Collector-base cutoff current (Emitter open) 2SC3496 VCEO Conditions IC = 1 mA, IB = 0 2SC3496A Min Typ Max 800 Unit V 900 ICBO 2SC3496A VCB = 900 V, IE = 0 50 VCB = 1 000 V, IE = 0 50 Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 0 Forward current transfer ratio hFE1 VCE = 5 V, IC = 0.05 A 6 3 hFE2 VCE = 5 V, IC = 0.5 A Collector-emitter saturation voltage VCE(sat) IC = 0.2 A, IB = 0.04 A Base-emitter saturation voltage VBE(sat) IC = 0.2 A, IB = 0.04 A 50 µA µA 1.5 1.0 V V fT VCE = 10 V, IC = 0.05 A, f = 1 MHz Turn-on time ton IC = 0.2 A 1.0 µs Storage time tstg IB1 = 0.04 A, IB2 = − 0.08 A 3.0 µs VCC = 250 V 1.0 µs Transition frequency Fall time tf 4 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: March 2003 SJD00104AED 1 2SC3496, 2SC3496A PC Ta IC VCE 40 IB=200mA 1.0 (1) 30 Collector-emitter saturation voltage VCE(sat) (V) TC=25˚C (1)TC=Ta (2)With a 50×50×2mm Al heat sink (3)Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) VCE(sat) IC 1.2 50 20 10 0.8 100mA 90mA 80mA 70mA 60mA 50mA 0.6 40mA 30mA 0.4 20mA 0.2 10mA (2) (3) 0 0 0 40 80 120 160 0 2 4 6 8 Base-emitter saturation voltage VBE(sat) (V) 12 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) VBE(sat) IC hFE IC TC=100˚C 25˚C 1 –25˚C 0.1 0.01 0.01 0.1 1 Collector current IC (A) fT I C 1 000 IC/IB=5 VCE=10V f=1MHz TC=25˚C VCE=5V Forward current transfer ratio hFE 25˚C TC=–25˚C 100˚C 0.1 0.1 25˚C TC=100˚C 10 –25˚C 1 0.1 0.01 1 Collector current IC (A) tstg 1 ton tf 0.1 0 0.2 0.4 0.6 0.8 Collector current IC (A) 1.0 ICP Collector current IC (A) Turn-on time ton , Storage time tstg , Fall time tf (µs) 10 0.01 Safe operation area IC/IB=5(2IB1=–IB2) VCC=250V TC=25˚C t=10ms IC 1 300ms 0.1 0.01 0.001 Non repetitive pulse TC=25˚C 1 10 100 1 000 Collector-emitter voltage VCE (V) SJD00104AED 10 1 0.01 0.1 Collector current IC (A) 10 Pulsed tw=1ms Duty cycle=1% 100 0.1 0.001 1 Collector current IC (A) ton , tstg , tf IC 100 0.1 2SC3496A 2SC3496 1 Transition frequency fT (MHz) 100 0.01 0.01 2 10 IC/IB=5 1 2SC3496, 2SC3496A Safe operation area (Reverse bias) Safe operation area (Reverse bias) measurement circuit 4 Collector current IC (A) L=100µH IC/IB=5 (2IB1=–IB2) TC=125˚C L 3 IB1 ICP 2 −IB2 VIN IC VCC IC 1 VCLAMP tw 0 T.U.T 0 400 800 1200 1600 Collector-emitter voltage VCE (V) Rth t Thermal resistance Rth (°C/W) 102 (1)Without heat sink (2)With a 50×50×2mm Al heat sink (1) (2) 10 1 10−1 10−2 10−4 10−3 10−2 10−1 1 10 102 103 104 Time t (s) SJD00104AED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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