AN10808 Thermal consideration of NXP FlatPower MEGA Schottky barrier rectifiers - Selection criteria Rev. 3 — 29 April 2015 Application note Document information Info Content Keywords FlatPower MEGA Schottky barrier rectifiers, thermal consideration, selection criteria Abstract This application note describes how to select a medium power Schottky barrier rectifier from the NXP FlatPower package family. AN10808 NXP Semiconductors NXP FlatPower MEGA Schottky rectifier - Thermal selection criteria Revision history Rev Date 3 20150429 Description • • • • Figure 1: updated Figure 2: added Table 1 and Table 2: updated Section 7 “Legal information”: updated 2 20130212 Section 4 “Product portfolio” added 1 20100629 Initial version Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] AN10808 Application note All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 2 of 17 AN10808 NXP Semiconductors NXP FlatPower MEGA Schottky rectifier - Thermal selection criteria 1. Introduction NXP Semiconductors offers a wide variety of medium power Schottky barrier rectifiers in different packages and with rated parameters like voltages, current and power capabilities. This application note has the following purposes: • Present the basics of NXP Semiconductors Schottky barrier rectifiers product range • Review and explain the data sheet parameters • Give design recommendation for the worst-case operating point AN10808 Application note All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 3 of 17 AN10808 NXP Semiconductors NXP FlatPower MEGA Schottky rectifier - Thermal selection criteria 2. Description of NXP Semiconductors FlatPower Schottky barrier rectifiers NXP MEGA Schottky barrier rectifier Process technology (optional): T L Tj(max) = 175 °C Low leakage current PMEG 20 10 A E T R Package indicator: P R Max. reverse voltage in V e.g. 20 = 20 V SOD128 SOD123W Cont. forward current in A e.g. 10 = 1.0 A Internal configuration: E single Variant number (optional) aaa-017943 Fig 1. PMEG in SOD123W and SOD128: nomenclature NXP MEGA Schottky barrier rectifier Cont. forward current in A e.g. 100 = 10 A PMEG 045 V 100 E PD Package indicator: PD Max. reverse voltage in V SOT1289 e.g. 45 = 45 V Variant number: V T A U low VF Trench technology lower IR (non AEC-Q) low VF (non AEC-Q) Internal configuration: E single aaa-017944 Fig 2. PMEG in SOT1289: nomenclature AN10808 Application note All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 4 of 17 AN10808 NXP Semiconductors NXP FlatPower MEGA Schottky rectifier - Thermal selection criteria 2.1 Data sheet parameters The data sheet gives different parameter values. 2.1.1 Limiting values VR = maximum reverse voltage The maximum allowable reverse voltage, without exceeding the given reverse currents. IF(AV) = maximum average forward current The maximum allowable forward current, under a specific condition. IFSM = maximum non-repetitive peak forward current Single current pulse, from Tj = 25 C before surge. After cooling down to Tj = 25 C, the next event is allowed. Ptot = total power dissipation Maximum total power dissipation at 25 C ambient temperature on different standard NXP conditions. Tj = junction temperature Maximum allowable junction temperature, usually 150 C, for NXP discrete bipolar products. Tamb = ambient temperature Maximum allowable ambient temperature, usually 150 C, for NXP discrete bipolar products. Tstg = storage temperature Maximum allowable storage temperature under MSL1 conditions. 2.1.2 Thermal characteristics Rth(j-a) = thermal resistance from junction to ambient Rth(j-a) = Rth(j-sp) + Rth(sp–a) The Rth(sp-a) value depends on the Printed-Circuit Board (PCB) material and on the footprint, layout and surrounding environmental conditions. Therefore, in the data sheets NXP Semiconductors indicates on which substrate the values were measured. Rth(j-sp) = thermal resistance from junction to solder point The Rth(j-sp) value is essentially independent of the external component, like PCB, footprint and solder. It is sensitive to the die size, the leadframe, the die-bonding method and the mold compound of the package. The values of Rth(j-sp) are measured from the cathode lead. AN10808 Application note All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 5 of 17 AN10808 NXP Semiconductors NXP FlatPower MEGA Schottky rectifier - Thermal selection criteria 2.1.3 Electrical characteristics VF = forward voltage Typical values under different forward current conditions. IR = reverse current Typical values under different reverse voltage conditions. Cd = diode capacitance Typical diode capacitance under different reverse voltage conditions. 3. PMEG FlatPower Schottky barrier rectifier selection criteria Circuit performance and long-term reliability are affected by the temperature of the die. Electrical power dissipated in any semiconductor device is a source of heat. This source increases the temperature of the die above the reference point of 298.15 K | 25 C | 77 F. 3.1 Temperature limits The increase in temperature depends on the power capability of the device and the thermal resistance of the complete system (SMD + PCB). It can be described as follows: T j max – T amb P tot = ---------------------------------R th j – a (1) Heat transfer can occur by radiation, conduction and convection. Surface-Mounted Devices (SMD) loose most of their heat by conduction when mounted on a substrate. The heat conducts from the junction via the package leads and the soldering connections to the substrate. Some heat radiates from the package into the ambient, where it disappears by convection or by active cooling air. The heat from the substrate disappears in the same way. The thermal resistance from junction to ambient can be described as follows: (2) R th j – a = R th j – sp + R th sp – a Calculating the maximum power capability, the following temperatures must be taken into account: • maximum junction temperature Tj(max) • maximum solder point temperature Tsp(max) • ambient temperature Tamb As an example, the limiting factors of the SOD123W package are shown by the PMEG3020ER in the following sections. AN10808 Application note All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 6 of 17 AN10808 NXP Semiconductors NXP FlatPower MEGA Schottky rectifier - Thermal selection criteria 3.1.1 FR4 PCB, single-sided copper, tin-plated and standard footprint • maximum junction temperature Tj(max) = 150 C | 423.15 K • thermal resistance from junction to ambient Rth(j-a) = 220 K/W • thermal resistance from junction to solder point Rth(j-sp) = 18 K/W T j max – T amb 423 15K – 298 15K P tot max = ---------------------------------- = ------------------------------------------------------- = 0 57W R th j – a K 220 ----W (3) T sp = T j max – P tot max R th j – sp (4) K T sp = 423 15K – 0 57W 18 ----- = 412 15K 139C 282 2F W (5) To avoid issues, like solder cracks or degradation of the solder, NXP strongly recommends: Tsp(max) 125 C 3.1.2 FR4 PCB, single-sided copper, tin-plated and mounting pad for cathode 1 cm2 • maximum junction temperature Tj(max) = 150 C | 423.15 K • thermal resistance from junction to ambient Rth(j-a) = 130 K/W • thermal resistance from junction to solder point Rth(j-sp) = 18 K/W T j max – T amb 423 15K – 298 15K P tot max = ---------------------------------- = ------------------------------------------------------- = 0 96W R th j – a K 130 ----W (6) T sp = T j max – P tot max R th j – sp (7) K T sp = 423 15K – 0 96W 18 ----- = 405 87K 133C 271 4F W (8) This behavior is shown in Figure 9 and Figure 10 of the data sheet PMEG3020ER. To avoid issues, like solder cracks or degradation of the solder, NXP strongly recommends: Tsp(max) 125 C 3.2 Pulse mode In pulse mode, like in DC-to-DC converter, the thermal resistance from junction to ambient is a variable. In order to give hardware designers the opportunity for best performance design, NXP’s PMEG data sheets provide thermal impedance graphs at different footprint conditions. AN10808 Application note All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 7 of 17 AN10808 NXP Semiconductors NXP FlatPower MEGA Schottky rectifier - Thermal selection criteria 3.2.1 FR4 PCB, single-sided copper, tin-plated and standard footprint 006aab284 103 duty cycle = Zth(j-a) (K/W) 1 102 0.5 0.25 0.75 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10−1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 3. PMEG3020ER: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 3.2.2 FR4 PCB, single-sided copper, tin-plated, 1 cm2 cathode mounting pad 006aab285 103 Zth(j-a) (K/W) duty cycle = 1 102 0.5 0.25 0.75 0.33 0.2 0.1 10 0.05 0.02 0.01 0 1 10−1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for cathode 1 cm2 Fig 4. PMEG3020ER: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values AN10808 Application note All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 8 of 17 AN10808 NXP Semiconductors NXP FlatPower MEGA Schottky rectifier - Thermal selection criteria 3.2.3 Example The correct use of the thermal impedance graphics is very important. In order to show how to use the Zth graph the right way, the IF(AV) value from the corresponding graphic IF(AV) vs Tamb (see Figure 5) is verified. 006aab292 3 IF(AV) (A) (1) 2 (2) (3) 1 (4) 0 0 25 50 75 100 125 150 175 Tamb (°C) FR4 PCB, standard footprint Tj = 150 C (1) = 1; DC (2) = 0.5; f = 20 kHz (3) = 0.2; f = 20 kHz (4) = 0.1; f = 20 kHz Fig 5. PMEG3020ER: Average forward current as a function of ambient temperature; typical values IF(AV) is calculated as follows: I F AV = I M (9) IM = peak current = duty cycle t = ---1t2 (10) t1 = pulse duration t2 = cycle duration AN10808 Application note All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 9 of 17 AN10808 NXP Semiconductors NXP FlatPower MEGA Schottky rectifier - Thermal selection criteria P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 6. Duty cycle definition For = 0.5 and f = 20 kHz: • t1 = 25 s (pulse duration) = tp (s) • t2 = 50 s (cycle duration) 006aab612 103 duty cycle = Zth(j-a) (K/W) 1 102 0.5 0.25 0.75 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10−1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values Approximate the Zth(j-a) value from the graph at = 0.5 and calculate the maximum power dissipation with the formula: T j max – T amb 423 15K – 298 15K P tot max = ---------------------------------- = ------------------------------------------------------- = 1 25W Z th j – a K 100 ----W (11) So, there is an “improvement” in Ptot by factor 2 under pulsed condition. AN10808 Application note All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 10 of 17 AN10808 NXP Semiconductors NXP FlatPower MEGA Schottky rectifier - Thermal selection criteria From this, IF(AV) can be calculated with the Equation 11 and the typical VF value taken from the data sheet: P tot max 1 25W I M = -------------------- = ------------------- = 3 4A VF 0 365V (12) I F AV = I M = 1 7A (13) This result fits with the graphic IF(AV) vs Tamb (see Figure 5). So thermal and electrical parameters are essential factors for the selection of the right PMEG Schottky barrier rectifier under considerations. Changing the package (bigger package size, bigger silicon die, better thermal performance) fulfill easier the requirements than increasing the cooling pad area. 3.3 Conclusion The characteristics given in the data sheet, help choosing the right PMEG Schottky barrier rectifier. The most critical question in hardware design is the maximum allowable Ptot capability. Data sheet parameters are a good instrument to compare different products under standard conditions. The worst-case scenario of an application can be calculated from the Zth graphs and Rth(j-a) values. After that the right NXP PMEG Schottky barrier rectifier for design can be selected. AN10808 Application note All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 11 of 17 AN10808 NXP Semiconductors NXP FlatPower MEGA Schottky rectifier - Thermal selection criteria 4. Product portfolio Table 1. Product portfolio with Tj = 150 C Type number VR IF IFSM(max) VF(max) at IF IR(max) at VR Package AEC-Q101 PMEG2010ER 20 V 1A 50 A 340 mV 1.00 mA SOD123W YES PMEG2010BER 20 V 1A 50 A 450 mV 0.05 mA SOD123W YES PMEG3010ER 30 V 1A 50 A 360 mV 1.50 mA SOD123W YES PMEG3010BER 30 V 1A 50 A 450 mV 0.05 mA SOD123W YES PMEG3010EP 30 V 1A 50 A 360 mV 1.50 mA SOD128 YES PMEG3010BEP 30 V 1A 50 A 450 mV 0.05 mA SOD128 YES PMEG3020ER 30 V 2A 50 A 420 mV 1.50 mA SOD123W YES PMEG3020BER 30 V 2A 50 A 520 mV 0.05 mA SOD123W YES PMEG3020EP 30 V 2A 50 A 360 mV 3.00 mA SOD128 YES PMEG3020BEP 30 V 2A 50 A 450 mV 0.10 mA SOD128 YES PMEG3020CEP 30 V 2A 50 A 420 mV 1.50 mA SOD128 YES PMEG3020DEP 30 V 2A 50 A 520 mV 0.05 mA SOD128 YES PMEG3030EP 30 V 3A 50 A 360 mV 5.00 mA SOD128 YES PMEG3030BEP 30 V 3A 50 A 450 mV 0.15 mA SOD128 YES PMEG3050EP 30 V 5A 70 A 360 mV 8.00 mA SOD128 YES PMEG3050BEP 30 V 5A 70 A 450 mV 0.25 mA SOD128 YES PMEG4010ER 40 V 1A 50 A 490 mV 0.05 mA SOD123W YES PMEG4010EP 40 V 1A 50 A 490 mV 0.05 mA SOD128 YES PMEG4020ER 40 V 2A 50 A 490 mV 0.10 mA SOD123W YES PMEG4020EP 40 V 2A 50 A 490 mV 0.10 mA SOD128 YES PMEG4030ER 40 V 3A 50 A 540 mV 0.10 mA SOD123W YES PMEG4030EP 40 V 3A 50 A 490 mV 0.20 mA SOD128 YES PMEG4050EP 40 V 5A 70 A 490 mV 0.30 mA SOD128 YES PMEG45U10EPD 45 V 10 A 180 A 490 mV 0.60 mA SOT1289 NO PMEG45A10EPD 45 V 10 A 170 A 540 mV 0.50 mA SOT1289 NO PMEG45T15EPD 45 V 15 A 210 A 580 mV 0.10 mA SOT1289 NO PMEG6010ER 60 V 1A 50 A 530 mV 0.06 mA SOD123W YES PMEG6010EP 60 V 1A 50 A 530 mV 0.06 mA SOD128 YES PMEG6020ER 60 V 2A 50 A 530 mV 0.15 mA SOD123W YES PMEG6020EP 60 V 2A 50 A 530 mV 0.15 mA SOD128 YES PMEG6030EP 60 V 3A 50 A 530 mV 0.20 mA SOD128 YES Table 2. Product portfolio with Tj = 175 C Type number VR IF IFSM(max) VF(max) at IF IR(max) at VR Package AEC-Q101 PMEG4010ETR 40 V 1A 50 A 490 mV 0.05 mA SOD123W YES PMEG4010ETP 40 V 1A 50 A 490 mV 0.05 mA SOD128 YES PMEG4020ETR 40 V 2A 50 A 490 mV 0.10 mA SOD123W YES PMEG4020ETP 40 V 2A 50 A 490 mV 0.10 mA SOD128 YES PMEG4030ETP 40 V 3A 70 A 490 mV 0.20 mA SOD128 YES AN10808 Application note All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 12 of 17 AN10808 NXP Semiconductors NXP FlatPower MEGA Schottky rectifier - Thermal selection criteria Table 2. Product portfolio with Tj = 175 C …continued Type number VR IF IFSM(max) VF(max) at IF IR(max) at VR Package AEC-Q101 PMEG4050ETP 40 V 5A 50 A 530 mV 0.30 mA SOD128 YES PEMG045V050EPD 45 V 5A 160 A 490 mV 0.30 mA SOT1289 YES PMEG045V100EPD 45 V 10 A 210 A 490 mV 0.60 mA SOT1289 YES PMEG045V150EPD 45 V 15 A 270 A 490 mV 0.90 mA SOT1289 YES PMEG045T150EPD 45 V 15 A 210 A 580 mV 0.10 mA SOT1289 YES PMEG050V150EPD 50 V 15 A 240 A 500 mV 1.0 mA SOT1289 YES PMEG6010ELR 60 V 1A 50 A 660 mV 300 nA SOD123W YES PMEG6010ETR 60 V 1A 50 A 530 mV 0.15 mA SOD123W YES PMEG6020ELR 60 V 2A 50 A 760 mV 300 nA SOD123W YES PMEG6020ETR 60 V 2A 50 A 530 mV 0.15 mA SOD123W YES PMEG6020ETP 60 V 2A 50 A 530 mV 0.15 mA SOD128 YES PMEG6030ETP 60 V 3A 50 A 530 mV 0.20 mA SOD128 YES PMEG6045ETP 60 V 4.5 A 70 A 530 mV 0.40 mA SOD128 YES PMEG060V050EPD 60 V 5A 160 A 560 mV 0.40 mA SOT1289 YES PMEG060V100EPD 60 V 10 A 210 A 560 mV 0.70 mA SOT1289 YES PMEG10020AELR 100 V 2A 50 A 770 mV 300 nA SOD123W YES AN10808 Application note All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 13 of 17 AN10808 NXP Semiconductors NXP FlatPower MEGA Schottky rectifier - Thermal selection criteria 5. Appendix 5.1 Average value T 1 I F AV = --- i t dt T (14) 0 For the given square-wave signal: T2 1 I F AV = --T i t dt + 0 (15) 0 I F AV = I 0 5 (16) In general, for square wave as simplification: I F AV = I M (17) In general, for full-wave sinusoidal signal as simplification: 2 IM I F AV = ------------- (18) In general, for triangle signal as simplification: I F AV = I M --2 AN10808 Application note (19) All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 14 of 17 AN10808 NXP Semiconductors NXP FlatPower MEGA Schottky rectifier - Thermal selection criteria 5.2 Root Mean Square value I RMS = I F AV 2 (20) T 2 1 --- i t dt T I RMS = (21) 0 For the given square wave: T2 I RMS = 1 --T 2 i t dt + 0 (22) 0 I RMS = T 2 I M -----2T (23) I RMS = I M 0 5 (24) In general, for square waves: I RMS = I M (25) In general, for full-wave sinusoidal signal as simplification: IM I RMS = -----2 (26) In general, for triangle signal as simplification: I RMS = I M --3 (27) 6. References AN10808 Application note [1] Philips Semiconductors — Power Semiconductors, Applications Handbook 1995 [2] NXP Semiconductors — Product data sheet PMEG3020ER, Rev. 01, 29 December 2008 All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 15 of 17 AN10808 NXP Semiconductors NXP FlatPower MEGA Schottky rectifier - Thermal selection criteria 7. Legal information 7.1 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 7.2 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product AN10808 Application note design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Evaluation products — This product is provided on an “as is” and “with all faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates and their suppliers expressly disclaim all warranties, whether express, implied or statutory, including but not limited to the implied warranties of non-infringement, merchantability and fitness for a particular purpose. The entire risk as to the quality, or arising out of the use or performance, of this product remains with customer. In no event shall NXP Semiconductors, its affiliates or their suppliers be liable to customer for any special, indirect, consequential, punitive or incidental damages (including without limitation damages for loss of business, business interruption, loss of use, loss of data or information, and the like) arising out the use of or inability to use the product, whether or not based on tort (including negligence), strict liability, breach of contract, breach of warranty or any other theory, even if advised of the possibility of such damages. Notwithstanding any damages that customer might incur for any reason whatsoever (including without limitation, all damages referenced above and all direct or general damages), the entire liability of NXP Semiconductors, its affiliates and their suppliers and customer’s exclusive remedy for all of the foregoing shall be limited to actual damages incurred by customer based on reasonable reliance up to the greater of the amount actually paid by customer for the product or five dollars (US$5.00). The foregoing limitations, exclusions and disclaimers shall apply to the maximum extent permitted by applicable law, even if any remedy fails of its essential purpose. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 7.3 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 April 2015 © NXP Semiconductors N.V. 2015. All rights reserved. 16 of 17 AN10808 NXP Semiconductors NXP FlatPower MEGA Schottky rectifier - Thermal selection criteria 8. Contents 1 2 2.1 2.1.1 2.1.2 2.1.3 3 3.1 3.1.1 3.1.2 3.2 3.2.1 3.2.2 3.2.3 3.3 4 5 5.1 5.2 6 7 7.1 7.2 7.3 8 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Description of NXP Semiconductors FlatPower Schottky barrier rectifiers . . . . . . . . . . . . . . . . . 4 Data sheet parameters . . . . . . . . . . . . . . . . . . . 5 Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . 5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . 6 PMEG FlatPower Schottky barrier rectifier selection criteria . . . . . . . . . . . . . . . . . . . . . . . . 6 Temperature limits . . . . . . . . . . . . . . . . . . . . . . 6 FR4 PCB, single-sided copper, tin-plated and standard footprint . . . . . . . . . . . . . . . . . . . . . . . 7 FR4 PCB, single-sided copper, tin-plated and mounting pad for cathode 1 cm2 . . . . . . . . . . . . 7 Pulse mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 FR4 PCB, single-sided copper, tin-plated and standard footprint . . . . . . . . . . . . . . . . . . . . . . . 8 FR4 PCB, single-sided copper, tin-plated, 1 cm2 cathode mounting pad . . . . . . . . . . . . . . . . . . . 8 Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Product portfolio . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Average value. . . . . . . . . . . . . . . . . . . . . . . . . 14 Root Mean Square value . . . . . . . . . . . . . . . . 15 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP Semiconductors N.V. 2015. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 29 April 2015 Document identifier: AN10808