Application Notes

AN10808
Thermal consideration of NXP FlatPower MEGA Schottky
barrier rectifiers - Selection criteria
Rev. 3 — 29 April 2015
Application note
Document information
Info
Content
Keywords
FlatPower MEGA Schottky barrier rectifiers, thermal consideration,
selection criteria
Abstract
This application note describes how to select a medium power Schottky
barrier rectifier from the NXP FlatPower package family.
AN10808
NXP Semiconductors
NXP FlatPower MEGA Schottky rectifier - Thermal selection criteria
Revision history
Rev
Date
3
20150429
Description
•
•
•
•
Figure 1: updated
Figure 2: added
Table 1 and Table 2: updated
Section 7 “Legal information”: updated
2
20130212
Section 4 “Product portfolio” added
1
20100629
Initial version
Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
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1. Introduction
NXP Semiconductors offers a wide variety of medium power Schottky barrier rectifiers in
different packages and with rated parameters like voltages, current and power
capabilities.
This application note has the following purposes:
• Present the basics of NXP Semiconductors Schottky barrier rectifiers product range
• Review and explain the data sheet parameters
• Give design recommendation for the worst-case operating point
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2. Description of NXP Semiconductors FlatPower Schottky barrier
rectifiers
NXP MEGA Schottky barrier rectifier
Process technology (optional):
T
L
Tj(max) = 175 °C
Low leakage current
PMEG 20 10 A E T R
Package indicator:
P
R
Max. reverse voltage in V
e.g. 20 = 20 V
SOD128
SOD123W
Cont. forward current in A
e.g. 10 = 1.0 A
Internal configuration:
E
single
Variant number (optional)
aaa-017943
Fig 1.
PMEG in SOD123W and SOD128: nomenclature
NXP MEGA Schottky barrier rectifier
Cont. forward current in A
e.g. 100 = 10 A
PMEG 045 V 100 E PD
Package indicator:
PD
Max. reverse voltage in V
SOT1289
e.g. 45 = 45 V
Variant number:
V
T
A
U
low VF
Trench technology
lower IR (non AEC-Q)
low VF (non AEC-Q)
Internal configuration:
E
single
aaa-017944
Fig 2.
PMEG in SOT1289: nomenclature
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2.1 Data sheet parameters
The data sheet gives different parameter values.
2.1.1 Limiting values
VR = maximum reverse voltage
The maximum allowable reverse voltage, without exceeding the given reverse currents.
IF(AV) = maximum average forward current
The maximum allowable forward current, under a specific condition.
IFSM = maximum non-repetitive peak forward current
Single current pulse, from Tj = 25 C before surge. After cooling down to Tj = 25 C,
the next event is allowed.
Ptot = total power dissipation
Maximum total power dissipation at 25 C ambient temperature on different standard NXP
conditions.
Tj = junction temperature
Maximum allowable junction temperature, usually 150 C, for NXP discrete bipolar
products.
Tamb = ambient temperature
Maximum allowable ambient temperature, usually 150 C, for NXP discrete bipolar
products.
Tstg = storage temperature
Maximum allowable storage temperature under MSL1 conditions.
2.1.2 Thermal characteristics
Rth(j-a) = thermal resistance from junction to ambient
Rth(j-a) = Rth(j-sp) + Rth(sp–a)
The Rth(sp-a) value depends on the Printed-Circuit Board (PCB) material and on the
footprint, layout and surrounding environmental conditions. Therefore, in the data sheets
NXP Semiconductors indicates on which substrate the values were measured.
Rth(j-sp) = thermal resistance from junction to solder point
The Rth(j-sp) value is essentially independent of the external component, like PCB,
footprint and solder.
It is sensitive to the die size, the leadframe, the die-bonding method and the mold
compound of the package. The values of Rth(j-sp) are measured from the cathode lead.
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2.1.3 Electrical characteristics
VF = forward voltage
Typical values under different forward current conditions.
IR = reverse current
Typical values under different reverse voltage conditions.
Cd = diode capacitance
Typical diode capacitance under different reverse voltage conditions.
3. PMEG FlatPower Schottky barrier rectifier selection criteria
Circuit performance and long-term reliability are affected by the temperature of the die.
Electrical power dissipated in any semiconductor device is a source of heat. This source
increases the temperature of the die above the reference point of 298.15 K | 25 C | 77 F.
3.1 Temperature limits
The increase in temperature depends on the power capability of the device and the
thermal resistance of the complete system (SMD + PCB).
It can be described as follows:
T j  max  – T amb
P tot = ---------------------------------R th  j – a 
(1)
Heat transfer can occur by radiation, conduction and convection.
Surface-Mounted Devices (SMD) loose most of their heat by conduction when mounted
on a substrate. The heat conducts from the junction via the package leads and the
soldering connections to the substrate. Some heat radiates from the package into the
ambient, where it disappears by convection or by active cooling air. The heat from the
substrate disappears in the same way.
The thermal resistance from junction to ambient can be described as follows:
(2)
R th  j – a  = R th  j – sp  + R th  sp – a 
Calculating the maximum power capability, the following temperatures must be taken into
account:
• maximum junction temperature Tj(max)
• maximum solder point temperature Tsp(max)
• ambient temperature Tamb
As an example, the limiting factors of the SOD123W package are shown by the
PMEG3020ER in the following sections.
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3.1.1 FR4 PCB, single-sided copper, tin-plated and standard footprint
• maximum junction temperature Tj(max) = 150 C | 423.15 K
• thermal resistance from junction to ambient Rth(j-a) = 220 K/W
• thermal resistance from junction to solder point Rth(j-sp) = 18 K/W
T j  max  – T amb
423 15K –  298 15K 
P tot  max  = ---------------------------------- = ------------------------------------------------------- = 0 57W
R th  j – a 
K
220 ----W
(3)
T sp = T j  max  – P tot  max   R th  j – sp 
(4)
K
T sp = 423 15K – 0 57W  18 ----- = 412 15K 139C  282 2F 
W
(5)
To avoid issues, like solder cracks or degradation of the solder, NXP strongly
recommends:
Tsp(max)  125 C
3.1.2 FR4 PCB, single-sided copper, tin-plated and mounting pad for
cathode 1 cm2
• maximum junction temperature Tj(max) = 150 C | 423.15 K
• thermal resistance from junction to ambient Rth(j-a) = 130 K/W
• thermal resistance from junction to solder point Rth(j-sp) = 18 K/W
T j  max  – T amb
423 15K –  298 15K 
P tot  max  = ---------------------------------- = ------------------------------------------------------- = 0 96W
R th  j – a 
K
130 ----W
(6)
T sp = T j  max  – P tot  max   R th  j – sp 
(7)
K
T sp = 423 15K – 0 96W  18 ----- = 405 87K 133C  271 4F 
W
(8)
This behavior is shown in Figure 9 and Figure 10 of the data sheet PMEG3020ER.
To avoid issues, like solder cracks or degradation of the solder, NXP strongly
recommends:
Tsp(max)  125 C
3.2 Pulse mode
In pulse mode, like in DC-to-DC converter, the thermal resistance from junction to ambient
is a variable.
In order to give hardware designers the opportunity for best performance design,
NXP’s PMEG data sheets provide thermal impedance graphs at different footprint
conditions.
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3.2.1 FR4 PCB, single-sided copper, tin-plated and standard footprint
006aab284
103
duty cycle =
Zth(j-a)
(K/W)
1
102
0.5
0.25
0.75
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10−1
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 3.
PMEG3020ER: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
3.2.2 FR4 PCB, single-sided copper, tin-plated, 1 cm2 cathode mounting pad
006aab285
103
Zth(j-a)
(K/W)
duty cycle =
1
102
0.5
0.25
0.75
0.33
0.2
0.1
10
0.05
0.02
0.01
0
1
10−1
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for cathode 1 cm2
Fig 4.
PMEG3020ER: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
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3.2.3 Example
The correct use of the thermal impedance graphics is very important.
In order to show how to use the Zth graph the right way, the IF(AV) value from the
corresponding graphic IF(AV) vs Tamb (see Figure 5) is verified.
006aab292
3
IF(AV)
(A)
(1)
2
(2)
(3)
1
(4)
0
0
25
50
75
100
125
150
175
Tamb (°C)
FR4 PCB, standard footprint
Tj = 150 C
(1)  = 1; DC
(2)  = 0.5; f = 20 kHz
(3)  = 0.2; f = 20 kHz
(4)  = 0.1; f = 20 kHz
Fig 5.
PMEG3020ER: Average forward current as a function of ambient temperature;
typical values
IF(AV) is calculated as follows:
I F  AV   = I M  
(9)
IM = peak current
 = duty cycle
t
 = ---1t2
(10)
t1 = pulse duration
t2 = cycle duration
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P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig 6.
Duty cycle definition
For  = 0.5 and f = 20 kHz:
• t1 = 25 s (pulse duration) = tp (s)
• t2 = 50 s (cycle duration)
006aab612
103
duty cycle =
Zth(j-a)
(K/W)
1
102
0.5
0.25
0.75
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10−1
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 7.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Approximate the Zth(j-a) value from the graph at  = 0.5 and calculate the maximum power
dissipation with the formula:
T j  max  – T amb
423 15K –  298 15K 
P tot  max  = ---------------------------------- = ------------------------------------------------------- = 1 25W
Z th  j – a 
K
100 ----W
(11)
So, there is an “improvement” in Ptot by factor 2 under pulsed condition.
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From this, IF(AV) can be calculated with the Equation 11 and the typical VF value taken
from the data sheet:
P tot  max 
1 25W
I M = -------------------- = ------------------- = 3 4A
VF
0 365V
(12)
I F  AV  = I M   = 1 7A
(13)
This result fits with the graphic IF(AV) vs Tamb (see Figure 5).
So thermal and electrical parameters are essential factors for the selection of the right
PMEG Schottky barrier rectifier under considerations.
Changing the package (bigger package size, bigger silicon die, better thermal
performance) fulfill easier the requirements than increasing the cooling pad area.
3.3 Conclusion
The characteristics given in the data sheet, help choosing the right PMEG Schottky barrier
rectifier. The most critical question in hardware design is the maximum allowable
Ptot capability.
Data sheet parameters are a good instrument to compare different products under
standard conditions.
The worst-case scenario of an application can be calculated from the Zth graphs and
Rth(j-a) values. After that the right NXP PMEG Schottky barrier rectifier for design can be
selected.
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4. Product portfolio
Table 1.
Product portfolio with Tj = 150 C
Type number
VR
IF
IFSM(max)
VF(max) at IF
IR(max) at VR
Package
AEC-Q101
PMEG2010ER
20 V
1A
50 A
340 mV
1.00 mA
SOD123W
YES
PMEG2010BER
20 V
1A
50 A
450 mV
0.05 mA
SOD123W
YES
PMEG3010ER
30 V
1A
50 A
360 mV
1.50 mA
SOD123W
YES
PMEG3010BER
30 V
1A
50 A
450 mV
0.05 mA
SOD123W
YES
PMEG3010EP
30 V
1A
50 A
360 mV
1.50 mA
SOD128
YES
PMEG3010BEP
30 V
1A
50 A
450 mV
0.05 mA
SOD128
YES
PMEG3020ER
30 V
2A
50 A
420 mV
1.50 mA
SOD123W
YES
PMEG3020BER
30 V
2A
50 A
520 mV
0.05 mA
SOD123W
YES
PMEG3020EP
30 V
2A
50 A
360 mV
3.00 mA
SOD128
YES
PMEG3020BEP
30 V
2A
50 A
450 mV
0.10 mA
SOD128
YES
PMEG3020CEP
30 V
2A
50 A
420 mV
1.50 mA
SOD128
YES
PMEG3020DEP
30 V
2A
50 A
520 mV
0.05 mA
SOD128
YES
PMEG3030EP
30 V
3A
50 A
360 mV
5.00 mA
SOD128
YES
PMEG3030BEP
30 V
3A
50 A
450 mV
0.15 mA
SOD128
YES
PMEG3050EP
30 V
5A
70 A
360 mV
8.00 mA
SOD128
YES
PMEG3050BEP
30 V
5A
70 A
450 mV
0.25 mA
SOD128
YES
PMEG4010ER
40 V
1A
50 A
490 mV
0.05 mA
SOD123W
YES
PMEG4010EP
40 V
1A
50 A
490 mV
0.05 mA
SOD128
YES
PMEG4020ER
40 V
2A
50 A
490 mV
0.10 mA
SOD123W
YES
PMEG4020EP
40 V
2A
50 A
490 mV
0.10 mA
SOD128
YES
PMEG4030ER
40 V
3A
50 A
540 mV
0.10 mA
SOD123W
YES
PMEG4030EP
40 V
3A
50 A
490 mV
0.20 mA
SOD128
YES
PMEG4050EP
40 V
5A
70 A
490 mV
0.30 mA
SOD128
YES
PMEG45U10EPD
45 V
10 A
180 A
490 mV
0.60 mA
SOT1289
NO
PMEG45A10EPD
45 V
10 A
170 A
540 mV
0.50 mA
SOT1289
NO
PMEG45T15EPD
45 V
15 A
210 A
580 mV
0.10 mA
SOT1289
NO
PMEG6010ER
60 V
1A
50 A
530 mV
0.06 mA
SOD123W
YES
PMEG6010EP
60 V
1A
50 A
530 mV
0.06 mA
SOD128
YES
PMEG6020ER
60 V
2A
50 A
530 mV
0.15 mA
SOD123W
YES
PMEG6020EP
60 V
2A
50 A
530 mV
0.15 mA
SOD128
YES
PMEG6030EP
60 V
3A
50 A
530 mV
0.20 mA
SOD128
YES
Table 2.
Product portfolio with Tj = 175 C
Type number
VR
IF
IFSM(max)
VF(max) at IF
IR(max) at VR
Package
AEC-Q101
PMEG4010ETR
40 V
1A
50 A
490 mV
0.05 mA
SOD123W
YES
PMEG4010ETP
40 V
1A
50 A
490 mV
0.05 mA
SOD128
YES
PMEG4020ETR
40 V
2A
50 A
490 mV
0.10 mA
SOD123W
YES
PMEG4020ETP
40 V
2A
50 A
490 mV
0.10 mA
SOD128
YES
PMEG4030ETP
40 V
3A
70 A
490 mV
0.20 mA
SOD128
YES
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Table 2.
Product portfolio with Tj = 175 C …continued
Type number
VR
IF
IFSM(max)
VF(max) at IF
IR(max) at VR
Package
AEC-Q101
PMEG4050ETP
40 V
5A
50 A
530 mV
0.30 mA
SOD128
YES
PEMG045V050EPD
45 V
5A
160 A
490 mV
0.30 mA
SOT1289
YES
PMEG045V100EPD
45 V
10 A
210 A
490 mV
0.60 mA
SOT1289
YES
PMEG045V150EPD
45 V
15 A
270 A
490 mV
0.90 mA
SOT1289
YES
PMEG045T150EPD
45 V
15 A
210 A
580 mV
0.10 mA
SOT1289
YES
PMEG050V150EPD
50 V
15 A
240 A
500 mV
1.0 mA
SOT1289
YES
PMEG6010ELR
60 V
1A
50 A
660 mV
300 nA
SOD123W
YES
PMEG6010ETR
60 V
1A
50 A
530 mV
0.15 mA
SOD123W
YES
PMEG6020ELR
60 V
2A
50 A
760 mV
300 nA
SOD123W
YES
PMEG6020ETR
60 V
2A
50 A
530 mV
0.15 mA
SOD123W
YES
PMEG6020ETP
60 V
2A
50 A
530 mV
0.15 mA
SOD128
YES
PMEG6030ETP
60 V
3A
50 A
530 mV
0.20 mA
SOD128
YES
PMEG6045ETP
60 V
4.5 A
70 A
530 mV
0.40 mA
SOD128
YES
PMEG060V050EPD
60 V
5A
160 A
560 mV
0.40 mA
SOT1289
YES
PMEG060V100EPD
60 V
10 A
210 A
560 mV
0.70 mA
SOT1289
YES
PMEG10020AELR
100 V
2A
50 A
770 mV
300 nA
SOD123W
YES
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5. Appendix
5.1 Average value
T
1
I F  AV  = ---  i  t  dt
T
(14)
0
For the given square-wave signal:
T2
1
I F  AV  = --T

 i  t  dt + 0 
(15)
0
I F  AV  = I  0 5
(16)
In general, for square wave as simplification:
I F  AV  = I M  
(17)
In general, for full-wave sinusoidal signal as simplification:
2  IM
I F  AV  = -------------
(18)
In general, for triangle signal as simplification:

I F  AV  = I M  --2
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(19)
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5.2 Root Mean Square value
I RMS =
I F  AV 
2
(20)
T
2
1
---  i  t  dt
T
I RMS =
(21)
0
For the given square wave:
T2
I RMS =
1
--T

2
 i  t  dt + 0 
(22)
0
I RMS =
T
2
I M  -----2T
(23)
I RMS = I M 0 5
(24)
In general, for square waves:
I RMS = I M  
(25)
In general, for full-wave sinusoidal signal as simplification:
IM
I RMS = -----2
(26)
In general, for triangle signal as simplification:

I RMS = I M  --3
(27)
6. References
AN10808
Application note
[1]
Philips Semiconductors — Power Semiconductors, Applications Handbook 1995
[2]
NXP Semiconductors — Product data sheet PMEG3020ER, Rev. 01,
29 December 2008
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7. Legal information
7.1
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
7.2
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
AN10808
Application note
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Evaluation products — This product is provided on an “as is” and “with all
faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates
and their suppliers expressly disclaim all warranties, whether express, implied
or statutory, including but not limited to the implied warranties of
non-infringement, merchantability and fitness for a particular purpose. The
entire risk as to the quality, or arising out of the use or performance, of this
product remains with customer.
In no event shall NXP Semiconductors, its affiliates or their suppliers be liable
to customer for any special, indirect, consequential, punitive or incidental
damages (including without limitation damages for loss of business, business
interruption, loss of use, loss of data or information, and the like) arising out
the use of or inability to use the product, whether or not based on tort
(including negligence), strict liability, breach of contract, breach of warranty or
any other theory, even if advised of the possibility of such damages.
Notwithstanding any damages that customer might incur for any reason
whatsoever (including without limitation, all damages referenced above and
all direct or general damages), the entire liability of NXP Semiconductors, its
affiliates and their suppliers and customer’s exclusive remedy for all of the
foregoing shall be limited to actual damages incurred by customer based on
reasonable reliance up to the greater of the amount actually paid by customer
for the product or five dollars (US$5.00). The foregoing limitations, exclusions
and disclaimers shall apply to the maximum extent permitted by applicable
law, even if any remedy fails of its essential purpose.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
7.3
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 29 April 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
16 of 17
AN10808
NXP Semiconductors
NXP FlatPower MEGA Schottky rectifier - Thermal selection criteria
8. Contents
1
2
2.1
2.1.1
2.1.2
2.1.3
3
3.1
3.1.1
3.1.2
3.2
3.2.1
3.2.2
3.2.3
3.3
4
5
5.1
5.2
6
7
7.1
7.2
7.3
8
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Description of NXP Semiconductors FlatPower
Schottky barrier rectifiers . . . . . . . . . . . . . . . . . 4
Data sheet parameters . . . . . . . . . . . . . . . . . . . 5
Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . 5
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . 6
PMEG FlatPower Schottky barrier rectifier
selection criteria . . . . . . . . . . . . . . . . . . . . . . . . 6
Temperature limits . . . . . . . . . . . . . . . . . . . . . . 6
FR4 PCB, single-sided copper, tin-plated and
standard footprint . . . . . . . . . . . . . . . . . . . . . . . 7
FR4 PCB, single-sided copper, tin-plated and
mounting pad for cathode 1 cm2 . . . . . . . . . . . . 7
Pulse mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
FR4 PCB, single-sided copper, tin-plated and
standard footprint . . . . . . . . . . . . . . . . . . . . . . . 8
FR4 PCB, single-sided copper, tin-plated, 1 cm2
cathode mounting pad . . . . . . . . . . . . . . . . . . . 8
Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Product portfolio . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Average value. . . . . . . . . . . . . . . . . . . . . . . . . 14
Root Mean Square value . . . . . . . . . . . . . . . . 15
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2015.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 29 April 2015
Document identifier: AN10808
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