Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
PMEGXX10BEA;
PMEGXX10BEV
1 A very low VF MEGA Schottky
barrier rectifier
Product data sheet
Supersedes data of 2004 Apr 02
2004 Jun 14
NXP Semiconductors
Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
FEATURES
QUICK REFERENCE DATA
• Forward current: 1 A
SYMBOL
• Reverse voltages: 20 V, 30 V, 40 V
• Very low forward voltage
PARAMETER
MAX.
UNIT
IF
forward current
1
A
VR
reverse voltage
20; 30; 40
V
• Ultra small and very small plastic SMD package
• Power dissipation comparable to SOT23.
PINNING
PIN
APPLICATIONS
DESCRIPTION
PMEGXX10BEA (see Fig.1)
• High efficiency DC-to-DC conversion
• Voltage clamping
• Protection circuits
1
cathode
2
anode
PMEGXX10BEV (see Fig.2)
• Low voltage rectification
1, 2, 5, 6
• Blocking diodes
cathode
3, 4
• Low power consumption applications.
anode
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a very small SOD323
(SC-76) and ultra small SOT666 SMD plastic package.
1
2
1
2
sym001
MARKING
TYPE NUMBER
The marking bar indicates the cathode.
MARKING CODE
PMEG2010BEA
V1
PMEG3010BEA
V2
PMEG4010BEA
V3
PMEG2010BEV
G6
PMEG3010BEV
G5
PMEG4010BEV
G4
Fig.1
Simplified outline (SOD323; SC-76) and
symbol.
6
5
4
1, 2
5, 6
3, 4
sym038
1
2
3
Fig.2 Simplified outline (SOT666) and symbol.
2004 Jun 14
2
NXP Semiconductors
Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PMEGXX10BEA
PMEGXX10BEV
−
DESCRIPTION
VERSION
plastic surface mounted package; 2 leads
SOD323
plastic surface mounted package; 6 leads
SOT666
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VR
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
continuous reverse voltage
PMEG2010BEA/PMEG2010BEV
−
20
V
PMEG3010BEA/PMEG3010BEV
−
30
V
PMEG4010BEA/PMEG4010BEV
−
40
V
IF
continuous forward current
Ts ≤ 55 °C; note 1
−
1
A
IFRM
repetitive peak forward current
tp ≤ 1 ms; δ ≤ 0.5; note 2
−
3.5
A
IFSM
non-repetitive peak forward current
tp = 8 ms; square wave;
note 2
−
10
A
Tj
junction temperature
note 3
−
150
°C
Tamb
operating ambient temperature
note 3
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
Notes
1. Refer to SOD323 (SC-76) and SOT666 standard mounting conditions.
2. Only valid if pins 3 and 4 are connected in parallel (SOT666 package).
3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV)
rating will be available on request.
2004 Jun 14
3
NXP Semiconductors
Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
PMEGXX10BEA (SOD323)
Rth(j-a)
thermal resistance from junction to
ambient
in free air; notes 1 and 2
450
K/W
in free air; notes 2 and 3
210
K/W
Rth(j-s)
thermal resistance from junction to
soldering point
note 4
90
K/W
thermal resistance from junction to
ambient
in free air; notes 2 and 5
405
K/W
in free air; notes 2 and 6
215
K/W
thermal resistance from junction to
soldering point
note 4
80
K/W
PMEGXX10BEV (SOT666)
Rth(j-a)
Rth(j-s)
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV)
rating will be available on request.
3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm.
4. Solder point of cathode tab.
5. Refer to SOT666 standard mounting conditions.
6. Only valid if pins 3 and 4 are connected in parallel (SOT666 package).
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
PMEG2010BEA/ PMEG3010BEA/ PMEG4010BEA/
PMEG2010BEV PMEG3010BEV PMEG4010BEV UNIT
TYP.
VF
IR
Cd
forward voltage
continuous
reverse current
diode capacitance
TYP.
MAX.
TYP.
MAX.
IF = 0.1 mA
90
130
90
130
95
130
mV
IF = 1 mA
150
190
150
200
155
210
mV
IF = 10 mA
210
240
215
250
220
270
mV
IF = 100 mA
280
330
285
340
295
350
mV
IF = 500 mA
355
390
380
430
420
470
mV
IF = 1 000 mA
420
500
450
560
540
640
mV
VR = 10 V; note 1
15
40
12
30
7
20
μA
VR = 20 V; note 1
40
200
−
−
−
−
μA
VR = 30 V; note 1
−
−
40
150
−
−
μA
VR = 40 V; note 1
−
−
−
−
30
100
μA
VR = 1 V; f = 1 MHz
66
80
55
70
43
50
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Jun 14
MAX.
4
NXP Semiconductors
Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
GRAPHICAL DATA
MHC673
104
handbook, halfpage
MHC674
105
handbook, halfpage
IF
(mA)
IR
(μA)
103
(1)
104
(1)
102
(2)
(3)
103
10
102
1
10
(2)
(3)
10−1
0
0.2
0.4
VF (V)
1
0.6
0
5
10
PMEG2010BEA/PMEG2010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
PMEG2010BEA/PMEG2010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.3
Fig.4
Forward current as a function of forward
voltage; typical values.
MHC675
140
15
20
Reverse current as a function of reverse
voltage; typical values.
MHC676
104
handbook, halfpage
Cd halfpage
handbook,
VR (V)
IF
(mA)
(pF)
120
103
100
(1)
102
80
60
(2)
(3)
10
40
1
20
10−1
0
0
5
10
15
VR (V)
20
0
0.2
PMEG2010BEA/PMEG2010BEV
Tamb = 25 °C; f = 1 MHz.
PMEG3010BEA/PMEG3010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.5
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
2004 Jun 14
5
0.4
VF (V)
0.6
Forward current as a function of forward
voltage; typical values.
NXP Semiconductors
Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
MHC677
105
MHC678
120
d
(pF)
100
handbook,
C halfpage
IR
(μA)
(1)
104
80
103
(2)
60
102
40
(3)
10
1
20
0
5
10
15
20
0
25
30
VR (V)
0
5
10
PMEG3010BEA/PMEG3010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
PMEG3010BEA/PMEG3010BEV
Tamb = 25 °C; f = 1 MHz.
Fig.7
Fig.8
Reverse current as a function of reverse
voltage; typical values.
MHC679
104
handbook, halfpage
20
MHC680
IR
(μA)
103
VR (V)
Diode capacitance as a function of reverse
voltage; typical values.
105
handbook, halfpage
IF
(mA)
(1)
104
(1)
102
(2)
(3)
103
10
102
1
10
10−1
15
0
0.2
0.4
VF (V)
1
0.6
(2)
(3)
0
10
20
30
VR (V)
40
PMEG4010BEA/PMEG4010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
PMEG4010BEA/PMEG4010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(3) Tamb = 25 °C.
Fig.9
Fig.10 Reverse current as a function of reverse
voltage; typical values.
Forward current as a function of forward
voltage; typical values.
2004 Jun 14
6
NXP Semiconductors
Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
MHC681
100
Cd
(pF)
handbook, halfpage
80
60
40
20
0
0
5
10
15
VR (V)
20
PMEG4010BEA/PMEG4010BEV
Tamb = 25 °C; f = 1 MHz.
Fig.11 Diode capacitance as a function of reverse
voltage; typical values.
2004 Jun 14
7
NXP Semiconductors
Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
PACKAGE OUTLINES
Plastic surface-mounted package; 2 leads
SOD323
A
D
E
X
v
HD
M
A
Q
1
2
bp
A
A1
(1)
c
Lp
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
HD
Lp
Q
v
mm
1.1
0.8
0.05
0.40
0.25
0.25
0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.45
0.15
0.25
0.15
0.2
Note
1. The marking bar indicates the cathode
OUTLINE
VERSION
SOD323
2004 Jun 14
REFERENCES
IEC
JEDEC
JEITA
SC-76
8
EUROPEAN
PROJECTION
ISSUE DATE
03-12-17
06-03-16
NXP Semiconductors
Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
Plastic surface-mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
ISSUE DATE
04-11-08
06-03-16
SOT666
2004 Jun 14
EUROPEAN
PROJECTION
9
NXP Semiconductors
Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Jun 14
10
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/04/pp11
Date of release: 2004 Jun 14
Document order number: 9397 750 13234
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