Power Transistors 2SD1742, 2SD1742A Silicon NPN triple diffusion planar type Unit: mm For low-freauency power amplification Complementary to 2SB1172 and 2SB1172A 7.0±0.3 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 60 2SD1742 emitter voltage 2SD1742A 80 6 V Peak collector current ICP 5 A Collector current IC 3 A Ta=25°C Junction temperature Tj Storage temperature Tstg 15 2.5 +0.3 0.75±0.1 W 1.3 1 150 ˚C –55 to +150 ˚C Symbol Collector cutoff 2SD1742 current 2SD1742A Collector cutoff 2SD1742 current 2SD1742A ICES ICEO IEBO Emitter cutoff current Collector to emitter 2SD1742 voltage 2SD1742A Forward current transfer ratio Conditions 3 2.3±0.2 typ 1:Base 2:Collector 3:Emitter I Type Package (Y) max 200 VCE = 80V, VBE = 0 200 VCE = 30V, IB = 0 300 VCE = 60V, IB = 0 300 VEB = 6V, IC = 0 1 60 IC = 30mA, IB = 0 hFE1* VCE = 4V, IC = 1A 70 10 hFE2 VCE = 4V, IC = 3A VBE VCE = 4V, IC = 3A Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.375A Transition frequency fT VCE = 10V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf FE1 min VCEO IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V 0.9±0.1 0 to 0.15 2 VCE = 60V, VBE = 0 Base to emitter voltage *h 0.5 max. 1.1±0.1 Electrical Characteristics (TC=25˚C) Parameter 0 to 0.15 3.0±0.2 4.6±0.4 ■ Unit: mm V VEBO dissipation 3.5±0.2 2.0±0.2 60 PC 1.0±0.2 7.0±0.3 Emitter to base voltage Collector power TC=25°C 10.0 –0. V 80 VCEO 1:Base 2:Collector 3:Emitter I Type Package 3 1.0 VCBO 2 Unit 2.5±0.2 2SD1742A Ratings 4.6±0.4 1 1.0 2SD1742 base voltage Collector to (TC=25˚C) Symbol Collector to 2.3±0.2 2.5±0.2 Parameter 0.4±0.1 1.0 max. ■ Absolute Maximum Ratings 0.85±0.1 0.75±0.1 7.2±0.3 ● 1.1±0.1 10.2±0.3 ● 0.8±0.2 7.2±0.3 ■ Features ● 3.5±0.2 3.0±0.2 Unit µA µA mA V 80 250 1.8 1.2 V V 30 MHz 0.5 µs 2.5 µs 0.4 µs Rank classification Rank Q P hFE1 70 to 150 120 to 250 1 Power Transistors 2SD1742, 2SD1742A PC — Ta IC — VCE 8 TC=25˚C (1) TC=Ta (2) Without heat sink (PC=1.3W) (1) 10 5 4 IB=100mA 90mA 80mA 70mA 60mA 50mA 40mA 3 30mA 2 20mA 1 40 60 80 100 120 140 160 2 4 6 8 10 0 25˚C 3000 1 –25˚C 0.1 0.03 0.1 0.3 1 3 300 100 1000 TC=100˚C 25˚C –25˚C 30 10 3 Collector current IC (A) 0.1 0.3 1 3 IC 1ms 300ms 0.3 0.01 3 10 30 2SD1742A 2SD1742 0.1 0.03 100 300 Collector to emitter voltage VCE 10 1000 (V) 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C t=10ms 30 1 0.01 0.03 10 103 ICP 100 3 Area of safe operation (ASO) 30 300 Collector current IC (A) 100 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–4 2.4 VCE=10V f=10MHz TC=25˚C 3000 1 0.01 0.03 10 2.0 fT — IC Transition frequency fT (MHz) Forward current transfer ratio hFE TC=100˚C 0.3 1.6 10000 1000 3 0.8 Base to emitter voltage VBE (V) VCE=4V 10 1 2 Collector to emitter voltage VCE (V) IC/IB=8 1 1.2 3 hFE — IC 30 3 0.4 4 12 10000 10 –25˚C 5 0 0 VCE(sat) — IC 100 0.01 0.01 0.03 TC=100˚C 1 0 20 25˚C 6 10mA (2) Ambient temperature Ta (˚C) Collector current IC (A) Collector current IC (A) 15 0 2 VCE=4V 7 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE 5 Collector current IC (A) Collector power dissipation PC (W) 20 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10