Transistor 2SA1512 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC1788 Unit: mm 3.0±0.2 4.0±0.2 ■ Features ■ Absolute Maximum Ratings (Ta=25˚C) marking Parameter Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –7 V Peak collector current ICP –1 A Collector current IC – 0.5 A Collector power dissipation PC 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 1 2 3 2.0±0.2 ● 15.6±0.5 ● Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converters. Allowing supply with the radial taping. Optimum for high-density mounting. 0.7±0.1 ● +0.2 0.45–0.1 ● 1.27 1.27 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package (Ta=25˚C) Parameter Symbol Conditions min typ max Unit ICBO VCB = –25V, IE = 0 –100 nA ICEO VCE = –20V, IB = 0 –1 µA Collector to base voltage VCBO IC = –10µA, IE = 0 –25 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –20 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 hFE1*1 VCE = –2V, IC = –0.5A*2 90 hFE2 VCE = –2V, IC = –1A*2 25 VCE(sat) IC = –500mA, IB = –50mA*2 Base to emitter saturation voltage VBE(sat) IC = –500mA, IB = –50mA*2 Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 150 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 15 Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage V 220 – 0.4 –1.2 FE1 V MHz 25 *2 *1h V pF Pulse measurement Rank classification Rank Q R hFE1 90 ~ 155 130 ~ 220 1 Transistor 2SA1512 PC — Ta IC — VCE IB=–10µA –1.0 400 –9µA –8µA –7µA 350 – 0.8 300 –6µA –5µA – 0.6 250 200 –4µA –3µA – 0.4 150 100 –2µA –1µA – 0.2 –10 –3 –1 – 0.3 Ta=75˚C 25˚C –25˚C – 0.03 0 40 60 80 100 120 140 160 0 –1 –10 –3 25˚C 75˚C – 0.3 – 0.1 – 0.03 –1 –3 –10 Collector current IC (A) Cob — VCB IE=0 f=1MHz Ta=25˚C 60 50 40 30 20 10 –3 –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –30 –100 Collector to base voltage VCB (V) –1 VCB=–10V Ta=25˚C 400 Ta=75˚C 25˚C 200 –10 320 500 300 –3 Collector current IC (A) fT — IE –25˚C 100 280 240 200 160 120 80 40 0 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Collector current IC (A) 80 0 –1 –6 VCE=–2V Forward current transfer ratio hFE –30 70 –5 600 IC/IB=10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –4 hFE — IC –100 –1 –3 Collector to emitter voltage VCE (V) VBE(sat) — IC Ta=–25˚C –2 Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 –30 – 0.1 50 0 Collector output capacitance Cob (pF) Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C 450 0 2 VCE(sat) — IC –100 –1.2 Collector current IC (mA) Collector power dissipation PC (mW) 500 –10 0 0.1 0.3 1 3 10 30 Emitter current IE (mA) 100