BSC016N06NS

BSC016N06NS
OptiMOSTM Power-MOSFET
Product Summary
Features
• Optimized for synchronous rectification
• 100% avalanche tested
• Superior thermal resistance
• N-channel
VDS
60
V
RDS(on),max
1.6
mW
ID
100
A
QOSS
81
nC
QG(0V..10V)
71
nC
1)
• Qualified according to JEDEC for target applications
PG-TDSON-8 FL
enlarged source interconnection
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
• Higher solder joint reliability due to enlarged source interconnection
Type
Package
Marking
BSC016N06NS
PG-TDSON-8 FL
016N06NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
100
V GS=10 V, T C=100 °C
100
V GS=10 V, T A=25 °C,
R thJA=50 K/W 2)
30
Unit
A
Pulsed drain current3)
I D,pulse
T C=25 °C
400
Avalanche energy, single pulse4)
E AS
I D=50 A, R GS=25 W
380
mJ
Gate source voltage
V GS
±20
V
1)
J-STD20 and JESD22
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
3)
4)
See figure 3 for more detailed information
See figure 13 for more detailed information
Rev. 2.1
page 1
2013-01-29
BSC016N06NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Operating and storage temperature
Value
T C=25 °C
139
T A=25 °C,
R thJA=50 K/W
2.5
T j, T stg
W
-55 ... 150
IEC climatic category; DIN IEC 68-1
Parameter
Unit
°C
55/150/56
Values
Symbol Conditions
Unit
min.
typ.
max.
bottom
-
-
0.9
top
-
-
20
6 cm2 cooling area2)
-
-
50
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R thJC
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=95 µA
2.1
2.8
3.3
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.5
1
V DS=60 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=50 A
-
1.4
1.6
mW
V GS=6 V, I D=12.5 A
-
1.9
2.4
-
1.9
2.9
W
70
140
-
S
Gate resistance
RG
Transconductance
g fs
Rev. 2.1
|V DS|>2|I D|R DS(on)max,
I D=50 A
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2013-01-29
BSC016N06NS
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
3900
5200
6500
900
1200
1500
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
14
48
96
Turn-on delay time
t d(on)
-
19
38
Rise time
tr
-
9
18
Turn-off delay time
t d(off)
-
35
70
Fall time
tf
-
9
18
V GS=0 V, V DS=30 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=30 A, R G,ext=1.6 W
pF
ns
Gate Charge Characteristics5)
Gate to source charge
Q gs
16
22
30
Gate charge at threshold
Q g(th)
10
14
19
Gate to drain charge
Q gd
8.8
13
20
Switching charge
Q sw
14
21
30
Gate charge total
Qg
58
71
95
Gate plateau voltage
V plateau
3.7
4.3
4.9
V
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 10 V
49
62
86
nC
Output charge
Q oss
V DD=30 V, V GS=0 V
60
81
102
-
-
100
-
-
400
V DD=30 V, I D=50 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continuous forward current
IS
A
T C=25 °C
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=50 A,
T j=25 °C
-
0.9
1.2
V
Reverse recovery time
t rr
V R=30 V, I F=50A,
di F/dt =100 A/µs
24
61
98
ns
Reverse recovery charge
Q rr
39
78
156
nC
5)
See figure 16 for gate charge parameter definition
Rev. 2.1
page 3
2013-01-29
BSC016N06NS
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
160
120
140
100
120
80
ID [A]
Ptot [W]
100
80
60
60
40
40
20
20
0
0
0
40
80
120
160
0
40
80
TC [°C]
120
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D=0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
160
101
limited by on-state
resistance
1 µs
10 µs
102
100
100 µs
0.5
ZthJC [K/W]
1 ms
ID [A]
10 ms
101
DC
0.2
0.1
10-1
0.05
0.02
0.01
100
10-2
10-1
10-3
10-1
100
101
102
VDS [V]
Rev. 2.1
single pulse
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
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2013-01-29
BSC016N06NS
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
400
10 V
8V
350
6V
5V
3
300
5.5 V
2.5
5.5 V
RDS(on) [mW]
ID [A]
250
200
150
6V
2
8V
1.5
5V
10 V
100
1
50
0
0.5
0.0
1.0
2.0
0
50
100
150
VDS [V]
200
250
300
350
400
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
200
320
160
240
120
ID [A]
gfs [S]
400
160
80
80
40
150 °C
25 °C
0
0
0
1
2
3
4
5
6
VGS [V]
Rev. 2.1
0
20
40
60
80
100
ID [A]
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2013-01-29
BSC016N06NS
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=50 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
3.5
4
3
3.5
3
950 µA
2.5
2
max
VGS(th) [V]
RDS(on) [mW]
2.5
1.5
typ
95 µA
2
1.5
1
1
0.5
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
1000
10000
Ciss
25 °C
Coss
100
1000
150 °C
IF [A]
C [pF]
103
102
10
100
Crss
101
1
10
0
10
20
30
40
50
60
VDS [V]
Rev. 2.1
0.0
0.5
1.0
1.5
VSD [V]
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2013-01-29
BSC016N06NS
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=50 A pulsed
parameter: T j(start)
parameter: V DD
100
12
30 V
10
12 V
25 °C
48 V
100 °C
8
VGS [V]
IAV [A]
125 °C
10
6
4
2
1
0
1
10
100
1000
0
20
tAV [µs]
40
60
80
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
70
V GS
68
Qg
66
VBR(DSS) [V]
64
62
60
V gs(th)
58
56
54
Q g(th)
Q sw
52
Q gs
50
-60
-20
20
60
100
Q gate
Q gd
140
Tj [°C]
Rev. 2.1
page 7
2013-01-29
BSC016N06NS
Package Outline
PG-TDSON-8 FL
PG-TDSON-8 FL: Outline
Rev. 2.1
page 8
2013-01-29
BSC016N06NS
Package Outline
PG-TDSON-8: Tape
Dimensions in mm
Rev. 2.1
page 9
2013-01-29
BSC016N06NS
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
This preliminary specification is subject to subsequent changes by Infineon Technologies
AG which are released on www.infineon.com/optimos only.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.1
page 10
2013-01-29
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