Power Transistors 2SC3978, 2SC3978A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ● ■ Absolute Maximum Ratings Parameter (TC=25˚C) Symbol Collector to 2SC3978 base voltage 2SC3978A Collector to 2SC3978 emitter voltage 2SC3978A Ratings Unit 900 VCBO 1000 800 V VEBO 7 V Peak collector current ICP 3 A Collector current IC 2 A Base current IB 0.5 A 35 PC Junction temperature Tj Storage temperature Tstg 2SC3978 current 2SC3978A 4.2±0.2 7.5±0.2 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Collector cutoff 2.54±0.25 W 2 ■ Electrical Characteristics 0.5 +0.2 –0.1 V VCEO Ta=25°C 0.8±0.1 1.3±0.2 5.08±0.5 Emitter to base voltage dissipation 1.4±0.1 1 900 Collector to emitter voltage Collector power TC=25°C φ3.1±0.1 V 1000 VCES 16.7±0.3 ● 2.7±0.2 4.0 ● High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 4.2±0.2 5.5±0.2 Solder Dip ● 10.0±0.2 0.7±0.1 ■ Features Symbol ICBO Conditions min typ max VCB = 900V, IE = 0 50 VCB = 1000V, IE = 0 50 µA µA Emitter cutoff current IEBO VEB = 7V, IC = 0 Collector to emitter voltage VCEO IC = 10mA, IB = 0 hFE1 VCE = 5V, IC = 0.1A 8 hFE2 VCE = 5V, IC = 0.5A 6 Collector to emitter saturation voltage VCE(sat) IC = 0.5A, IB = 0.1A 1.5 V Base to emitter saturation voltage VBE(sat) IC = 0.5A, IB = 0.1A 1.5 V Transition frequency fT VCE = 10V, IC = 0.1A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio IC = 0.5A, IB1 = 0.1A, IB2 = – 0.2A, VCC = 250V 50 Unit 800 V MHz 15 0.7 µs 2.5 µs 0.3 µs 1 Power Transistors 2SC3978, 2SC3978A PC — Ta IC — VCE 50 40 (1) 2.5 30 20 (2) 10 IB=500mA 400mA 300mA 2.0 200mA 1.5 100mA 1.0 50mA 0.5 (4) (3) 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 Forward current transfer ratio hFE 3 TC=–25˚C 100˚C 25˚C 0.3 1 3 100 30 TC=100˚C 10 25˚C –25˚C 3 0.1 0.3 1 3 0.1 TC=100˚C 0.03 –25˚C 0.01 0.01 0.03 30 10 3 tstg 0.3 ton 0.1 tf 3 1 0.3 100 Collector to base voltage VCB (V) 0.1 0.3 1 3 10 Non repetitive pulse TC=25˚C ICP IC 1 t=1ms 10ms DC 0.3 0.1 0.03 0.01 0.001 0.01 30 10 0.003 0.03 1 3 10 3 3 1 1 Area of safe operation (ASO) Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=200V TC=25˚C 10 0.3 30 10 30 Switching time ton,tstg,tf (µs) 100 0.1 Collector current IC (A) ton, tstg, tf — IC IE=0 f=1MHz TC=25˚C 25˚C VCE=10V f=1MHz TC=25˚C 0.1 0.01 0.03 10 100 10 0.3 Collector current IC (A) Cob — VCB 3 1 fT — IC 300 1 0.01 0.03 10 1000 1 3 100 VCE=5V Collector current IC (A) 300 10 Collector current IC (A) Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 10 0.1 12 IC/IB=5 30 hFE — IC 30 0.1 0.01 0.03 10 1000 IC/IB=5 0.3 8 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 1 6 Transition frequency fT (MHz) 0 Collector output capacitance Cob (pF) Collector to emitter saturation voltage VCE(sat) (V) TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 2 VCE(sat) — IC 3.0 Collector current IC (A) Collector power dissipation PC (W) 60 0 0.4 0.8 1.2 Collector current IC (A) 1.6 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SC3978, 2SC3978A Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit 4.0 Lcoil=100µH IC/IB=5 (IB1=–IB2) TC=25˚C ICP 3.0 L coil IB1 2.5 T.U.T –IB2 Vin IC 2.0 IC VCC 1.5 1.0 0.5 0 0 Vclamp tW 2SC3978A 2SC3978 Collector current IC (A) 3.5 200 400 600 800 1000 1200 1400 1600 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3