Data Sheet

SO
D
123
W
PMEG10010ELR
100 V, 1 A low leakage current Schottky barrier rectifier
7 May 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD123W small and flat
lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
•
•
•
•
•
•
•
Average forward current: IF(AV) ≤ 1 A
Reverse voltage: VR ≤ 100 V
Low forward voltage: VF = 710 mV
High power capability due to clip-bonding technology
Extremely low leakage current IR = 40 nA
High temperature Tj ≤ 175 °C
AEC-Q101 qualified
3. Applications
•
•
•
•
•
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption applications
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF(AV)
average forward
current
δ = 0.5; f = 20 kHz; Tsp ≤ 170 °C;
-
-
1
A
VR
reverse voltage
Tj = 25 °C
-
-
100
V
VF
forward voltage
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02;
-
710
770
mV
-
40
150
nA
square wave
Tj = 25 °C
IR
reverse current
VR = 100 V; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
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PMEG10010ELR
NXP Semiconductors
100 V, 1 A low leakage current Schottky barrier rectifier
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
K
cathode[1]
2
A
anode
[1]
Simplified outline
1
Graphic symbol
2
SOD123W
1
2
sym001
The marking bar indicates the cathode.
6. Ordering information
Table 3.
Ordering information
Type number
PMEG10010ELR
Package
Name
Description
Version
SOD123W
plastic surface mounted package; 2 leads
SOD123W
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMEG10010ELR
K7
PMEG10010ELR
Product data sheet
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PMEG10010ELR
NXP Semiconductors
100 V, 1 A low leakage current Schottky barrier rectifier
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
Tj = 25 °C
-
100
V
IF
forward current
Tsp = 165 °C; δ = 1
-
1.4
A
IF(AV)
average forward current
δ = 0.5; f = 20 kHz; Tamb ≤ 135 °C;
-
1
A
-
1
A
-
50
A
[2]
-
680
mW
[3]
-
1150
mW
[1]
-
2140
mW
[1]
square wave
δ = 0.5; f = 20 kHz; Tsp ≤ 170 °C;
square wave
IFSM
non-repetitive peak forward
current
tp = 8 ms; Tj(init) = 25 °C; square wave
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
junction temperature
-
175
°C
Tamb
ambient temperature
-55
175
°C
Tstg
storage temperature
-65
175
°C
[1]
[2]
[3]
Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[2]
[3]
[4]
[5]
PMEG10010ELR
Product data sheet
Min
Typ
Max
Unit
[1][2]
-
-
220
K/W
[1][3]
-
-
130
K/W
[1][4]
-
-
70
K/W
[5]
-
-
18
K/W
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Device mounted on a ceramic PCB, Al2O3, standard footprint.
Soldering point of cathode tab.
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PMEG10010ELR
NXP Semiconductors
100 V, 1 A low leakage current Schottky barrier rectifier
006aab649
103
duty cycle =
Zth(j-a)
(K/W)
1
102
0.5
0.25
0.1
10
0.02
1
0.75
0.33
0.2
0.05
0.01
0
10- 1
10- 3
10- 2
10- 1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab650
103
Zth(j-a)
(K/W)
duty cycle =
102
1
0.5
0.25
10
0.1
0.02
1
0.75
0.33
0.2
0.05
0.01
0
10- 1
10- 3
10- 2
10- 1
FR4 PCB, mounting pad for cathode 1 cm
Fig. 2.
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG10010ELR
Product data sheet
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PMEG10010ELR
NXP Semiconductors
100 V, 1 A low leakage current Schottky barrier rectifier
102
006aab651
duty cycle =
1
Zth(j-a)
(K/W)
0.5
0.25
10
0.1
0.02
0.75
0.33
0.2
0.05
0.01
1
0
10- 1
10- 3
10- 2
10- 1
1
10
102
tp (s)
103
Ceramic PCB, Al2O3, standard footprint
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG10010ELR
Product data sheet
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PMEG10010ELR
NXP Semiconductors
100 V, 1 A low leakage current Schottky barrier rectifier
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)R
reverse breakdown
voltage
IR = 1 mA; Tj = 25 °C; tp = 300 µs;
100
-
-
V
forward voltage
IF = 0.1 A; tp ≤ 300 µs; δ ≤ 0.02;
-
505
565
mV
-
640
710
mV
-
675
740
mV
-
710
770
mV
-
575
680
mV
-
4
-
nA
-
12
-
nA
-
40
150
nA
-
70
500
µA
VR = 1 V; f = 1 MHz; Tj = 25 °C
-
70
-
pF
VR = 4 V; f = 1 MHz; Tj = 25 °C
-
42
-
pF
VR = 10 V; f = 1 MHz; Tj = 25 °C
-
28
-
pF
IF = 0.5 A; IR = 1 A; IR(meas) = 0.25 A;
-
3.7
-
ns
-
690
-
V
VF
δ = 0.02
Tj = 25 °C
IF = 0.5 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IF = 0.7 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 125 °C
IR
reverse current
VR = 10 V; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
VR = 60 V; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
VR = 100 V; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
VR = 100 V; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 125 °C
Cd
trr
diode capacitance
reverse recovery time
Tj = 25 °C
VFRM
peak forward recovery
voltage
PMEG10010ELR
Product data sheet
IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C
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PMEG10010ELR
NXP Semiconductors
100 V, 1 A low leakage current Schottky barrier rectifier
aaa-016946
10
IF
(A)
IR
(A)
(1)
1
10-3
(1)
(2)
10-4
(2)
(3)
10-5
(3)
10-1
aaa-016947
10-2
(4)
10-6
10-7
10-2
(5)
10-8
(4)
10-3
(5)
(6)
10-9
(6)
10-10
10-4
Fig. 4.
0
0.4
0.8
VF (V)
10-11
1.2
0
20
40
(1) Tj = 175 °C
(1) Tj = 175 °C
(2) Tj = 150 °C
(2) Tj = 150 °C
(3) Tj = 125 °C
(3) Tj = 125 °C
(4) Tj = 85 °C
(4) Tj = 85 °C
(5) Tj = 25 °C
(5) Tj = 25 °C
(6) Tj = −40 °C
(6) Tj = −40 °C
Forward current as a function of forward
voltage; typical values
Fig. 5.
aaa-016948
125
Cd
(pF)
60
80
100
Reverse current as a function of reverse
voltage; typical values
aaa-016955
0.8
(4)
PF(AV)
(W)
100
VR (V)
0.6
(3)
75
0.4
(2)
50
(1)
0.2
25
0
Fig. 6.
0
20
40
60
80
VR (V)
0.0
100
0
f = 1 MHz; Tamb = 25 °C
Tj = 175 °C
Diode capacitance as a function of reverse
voltage; typical values
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig. 7.
PMEG10010ELR
Product data sheet
1.0
IF(AV) (A)
1.5
Average forward power dissipation as a
function of average forward current; typical
values
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0.5
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PMEG10010ELR
NXP Semiconductors
100 V, 1 A low leakage current Schottky barrier rectifier
aaa-016956
30
(1)
PR(AV)
(mW)
aaa-016957
1.5
(1)
IF(AV)
(A)
20
1.0
(2)
(2)
10
(3)
0.5
(4)
(3)
0
(4)
0
20
40
60
80
VR (V)
0
100
Tj = 150 °C
Average reverse power dissipation as a
function of reverse voltage; typical values
Fig. 9.
1.0
aaa-016959
(1)
IF(AV)
(A)
1.0
(2)
(3)
0.5
(2)
(3)
0.5
(4)
0
0
(4)
50
100
0
150
200
Tamb (°C)
FR4 PCB, mounting pad for cathode 1 cm
Tj = 175 °C
Fig. 10. Average forward current as a function of
ambient temperature; typical values
Product data sheet
0
50
100
150
200
Tamb (°C)
Ceramic PCB, Al2O3, standard footprint
2
Tj = 175 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
PMEG10010ELR
150
200
Tamb (°C)
Average forward current as a function of
ambient temperature; typical values
1.5
(1)
IF(AV)
(A)
100
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
aaa-016958
1.5
50
FR4 PCB, standard footprint
Tj = 175 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 8.
0
Fig. 11. Average forward current as a function of
ambient temperature; typical values
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PMEG10010ELR
NXP Semiconductors
100 V, 1 A low leakage current Schottky barrier rectifier
aaa-016960
1.5
(1)
IF(AV)
(A)
1.0
(2)
(3)
0.5
(4)
0
0
50
100
150
200
Tamb (°C)
Tj = 175 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 12. Average forward current as a function of solder point temperature; typical values
11. Test information
IF
IR(meas)
time
IR
trr
006aad022
Fig. 13. Reverse recovery definition
PMEG10010ELR
Product data sheet
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PMEG10010ELR
NXP Semiconductors
100 V, 1 A low leakage current Schottky barrier rectifier
IF
time
VF
VFRM
VF
time
001aab912
Fig. 14. Forward recovery definition
P
tcy
duty cycle δ =
tp
tcy
tp
t
006aac658
Fig. 15. Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations:
IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with
IRMS defined as RMS current.
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PMEG10010ELR
Product data sheet
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PMEG10010ELR
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100 V, 1 A low leakage current Schottky barrier rectifier
12. Package outline
1.9
1.5
1.1
0.9
1
0.6
0.3
3.7
3.3
2.8
2.4
2
1.05
0.75
0.22
0.10
Dimensions in mm
08-11-06
Fig. 16. Package outline SOD123W
13. Soldering
4.4
2.9
2.8
solder lands
1.1 1.2
(2×) (2×)
2.1 1.6
solder resist
solder paste
occupied area
1.1
(2×)
1.2
(2×)
Dimensions in mm
sod123w_fr
Fig. 17. Reflow soldering footprint for SOD123W
PMEG10010ELR
Product data sheet
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PMEG10010ELR
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100 V, 1 A low leakage current Schottky barrier rectifier
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMEG10010ELR v.2
20150507
Product data sheet
-
PMEG10010ELR v.1
Modifications:
•
PMEG10010ELR v.1
20150220
-
-
PMEG10010ELR
Product data sheet
Product status changed
Preliminary data sheet
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PMEG10010ELR
NXP Semiconductors
100 V, 1 A low leakage current Schottky barrier rectifier
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PMEG10010ELR
Product data sheet
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
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agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
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applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
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PMEG10010ELR
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100 V, 1 A low leakage current Schottky barrier rectifier
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
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Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMEG10010ELR
Product data sheet
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PMEG10010ELR
NXP Semiconductors
100 V, 1 A low leakage current Schottky barrier rectifier
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................3
10
Characteristics ....................................................... 6
11
11.1
Test information ..................................................... 9
Quality information ............................................. 10
12
Package outline ................................................... 11
13
Soldering .............................................................. 11
14
Revision history ................................................... 12
15
15.1
15.2
15.3
15.4
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 7 May 2015
PMEG10010ELR
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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