Automotive Memory Products Serial EEPROM Powered for Automotive www.microchip.com/memory Microchip Serial Memory Products Microchip Technology has developed industry-leading processes for each step in the design, manufacturing and testing phases of its serial EEPROMs, and has become one of the most respected leaders in supply of these devices to the automotive industry – worldwide. Serial EEPROMs All Major Bus Types SPI I2C™ Microwire UNI/O® Extended Temperatures H-Temp E-Temp I-Temp -40ºC to 150ºC -40ºC to 125ºC -40ºC to 85ºC 25LCXX 24LCXX 93LCXX 11LCXX Serial EEPROM Tools MPLAB® Starter Kit for Serial Memory Products Total Endurance™ Software Verilog and IBIS Models Microchip Advanced Parts Selector (MAPS) Complete Product Lines Density: Speed: 128 bits to 1 Mbit Up to 20 MHz Highest Quality QS9000; ISO/TS16949 AEC-Q100 Compliant Pb-Free Parts Halogen Free Parts RoHS Compliant Long Product Life Cycles Operating Voltages Innovative Packages and Die PDIP, SOIC, TSSOP, T-DFN, MSOP, SOT-23, SC70, WLCSP, Die and Wafer Reliability High Endurance: 1 Million E/W Cycles Data Retention: Over 200 Years Serial SRAM Looking for RAM memory also? Microchip’s SPI Serial SRAM products offer: ■ A quick and easy way to add external RAM ■ 4-pin SPI interface ■ 8 and 32 Kbyte options ■ 20 MHz clock speed ■ No write cycle time LC: AA: C: VL: 2.5-5.5V 1.7-5.5V 4.5-5.5V 1.5V-3.6V Robust Design ■ ESD Protection > 4000V Human Body Model (HBM) > 400V Machine Model (MM) > 1000V Charged Device Model ■ Latch-up protection > 200 mA on all pins ■ ESD Induced Latch-up > 100V (MM) on VDD; >400V on all I/O > 1M cycles Endurance and > 200 years data retention ■ Up to 150°C Operation (reads and writes) ■ Power-On Reset (POR) and Brown-Out Reset (BOR) – Effective protection against noisy automotive environments – Eliminates false writes ■ Schmitt Trigger input filters for noise reduction ■ Complete traceability including die location on wafer Wafer-level Burn-in Microchip’s Triple Test Flow is currently the most robust testing procedure for serial EEPROM devices in the industry. It tests each cell of each die three times and also performs extensive endurance and data retention tests to ensure quality and reliability. Infant mortality of Microchip serial EEPROMs is among the lowest in the industry due to this extensive testing, excellent fabrication and highly reliable memory cell design. Microchip’s Triple Test and Wafer-level Burn-in Procedure Traditional Burn-in (Old Technology) General purpose non-specific testing procedure for random logic cells ■ Non-specific and untargeted testing mechanism – Increases failure rates. ■ Expensive, time consuming and inefficient. ■ Introduces defect modes like bent leads and EOS that sometimes go undetected. Moving beyond traditional burn-in to wafer level burn-in with the Triple Test Flow specifically targeted for memory cells has helped create the industry’s most reliable memory products. ■ Extensive Testing – Every cell in every die is tested three times, including specific endurance and data retention tests to ensure highest quality. ■ HVST, LVHF and TVPP tests target specific defects. ■ Maverick, SBY and GBN target overall failure patterns and trends. ■ Insight into failure modes along with flexible test flow ensures continues improvement. Triple Test Flow Microchip tests every cell in wafer form twice, then performs a final test after assembly. Retention Bake 1: Wafer Probe Full functional tests on 100% of die and bits; 85ºC or 125ºC 5000 erase/write cycles on all bits 2: Wafer Probe 2nd 100% bit test (25ºC) full-functional screen 3: Assembly & Final Test • 250ºC up to 24 hours • Equivalent to 100 years at 85ºC Key Aspects: Endurance Testing MAVERICK HVST TVPP Any die with charge loss in any cell between the 2 probes is rejected to prevent infant mortality Key Aspects: Functional Test Verify Margins GBN EDIO LVHF SBY Main Goals – Zero Defects ■ Full verification of data sheet parameters for functional compliance at die and package level. ■ Removal of manufacturing defects to ensure highest quality and reliability. ■ Screening out of functional devices that may fail in the future. Wafer Probe Quality Screens Microchip performs additional in-house testing during wafer probe to ensure all parts are of the highest quality and to eliminate any devices that are outside the normal distribution or might possibly fail in the future. High Voltage Stress Test (HVST) HVST targets weak devices with oxide defects in RAM and logic circuits. HVST is a targeted test that eliminates these devices by stressing the oxides at higher than normal voltages. Time at Vpp (TVPP) TVPP targets oxide defects in EEPROM cells, charge pumps and other high-voltage circuits. Programming voltages (VPP) are applied to the memory array for an extended period of time in order to highlight any weak devices. Low Voltage High Frequency (LVHF) LVHF targets signal paths that are partially blocked and therefore more resistive than normal. LVHF eliminates these devices by requiring them to operate faster than specified and at voltages lower than specified. Good Die in a Bad Neighborhood (GBN) and Edge Die Ink Out (EDIO) Special algorithms target devices that function, but are suspect because of their proximity to clusters of failing devices or edge die. Failing Die Rejected by GBN screen Passing Die Rejected by EDIO screen Rejected by EDIO screen (Concept) Maverick Test Maverick test targets wafer lots with unusual parametric performance and/or yields. Separate from device data sheet parameters, intrinsic parameters such as transistor thresholds or thin film resistances are measured. Maverick testing rejects wafer lots with values outside the normal range. Statistical Bin Yield (SBY) SBY targets individual wafers with yields outside the normal range. Within a wafer lot, occasionally an individual wafer will differ significantly from the yield of all the other wafers. SBY rejects that entire wafer. Automotive Grade Quality and Tools Microchip’s best-in-class field performance is the combined result of Wafer Level Burn-In and Wafer Probe Quality Screens. Microchip Serial EEPROM Field Return Data 24C16 Competitive Endurance Data 2 100 Bit Fails (Bad Bits) Oxide Fails 1.6 Logic Fails (Die Level) 1.4 Supplier ‘A’ Supplier ‘B’ Supplier ‘C’ Supplier ‘D’ MICROCHIP 90 Percentage of Defective Units (Sample Size = 128 Units) 1.8 PPM (Field Returns) QUALITY Microchip Serial EEPROM Endurance 1.2 1 0.8 0.6 0.4 0.2 0 PPM 80 70 60 50 40 30 20 10 0 1H-2005 2H-2005 1H-2006 2H-2006 1H-2007 2H-2007 1H-2008 2H-2008 0 Year ■ Industry lowest field return numbers – best suited for automotive applications Total Endurance™ Software Total Endurance Software provides a comprehensive model that helps estimate the endurance and reliability of Microchip Serial EEPROM devices. By providing operating conditions based on your application, all design tradeoffs affecting reliability can be accurately estimated both graphically and numerically in PPM, FIT and MTBF modes, saving time and ensuring a truly robust design. No Fails 0 500,000 1,000,000 1,500,000 2,000,000 E/W Cycles at 85°C ■ All devices from supplier A and B failed ■ Testing shows zero Microchip EEPROM fails even at 2 million E/W cycles at 85ºC Automotive Grade* ■ ISO TS-16949 (inc. VDA6.1) compliant quality manufacturing systems ■ Restricted site assembly ■ Production Parts Approval Process (PPAP) ■ Exceeds AEC Q-100 product qualification requirements ■ Special screening and test methods including Maverick lot testing ■ Long product life cycle in support of automotive industry 15 year supply requirement ® MICROCHIP *Automotive grade criteria will evolve as market requirements change. Now Offering I2C™ and SPI Serial EEPROMs with Optional Range from -55°C to +150°C 150oC ■ Automotive Turbo Chargers and Exhaust Gas Recirculation ■ Automotive fan motors, air valves, flaps and spark plugs ■ Areas under the vehicle hood Additional Resources Verilog and IBIS Models Microchip Advanced Part Selector (MAPS): www.microchip.com/maps Memory Products Webinars: http://techtrain.microchip.com/webseminars Over 50 different application notes, many with source code options can be found at: www.microchip.com/appnotes Get started with Microchip’s Serial EEPROMs in four easy steps: www.microchip.com/eeprom MPLAB Starter Kit for Serial Memory Products (Part Number DV243003) and PIM Packs (AC243003) Product Specifications I2C™ Memory Products Device Density (Organization) 24XX00 Max Clock Frequency Operating Voltage (AA, LC, C) Temperature (I, E, H) Endurance (E/W Cycles) Data Retention Write Protect (Hardware) Packages 128 bits (x8) 400 kHz 1.7V-5.5V -40°C to +125ºC 1M 200 years No 24XX01/014 1 Kbit (x8) 400 kHz 1.7V-5.5V -40°C to +150ºC 1M 200 years W, ½ PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP, SC70 24XX02/024 2 Kbits (x8) 400 kHz 1.7V-5.5V -40°C to +125ºC 1M 200 years W, ½ PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP, SC70 24XX04 4 Kbits (x8) 400 kHz 1.7V-5.5V -40°C to +125ºC 1M 200 years W, ½ PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP, WLCSP 24XX08 8 Kbits (x8) 400 kHz 1.7V-5.5V -40°C to +125ºC 1M 200 years W, ½ PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP 24XX16 16 Kbits (x8) 400 kHz 1.7V-5.5V -40°C to +125ºC 1M 200 years W, ½ PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP, WLCSP 24XX32 32 Kbits (x8) 400 kHz 1.7V-5.5V -40°C to +125ºC 1M 200 years W, ¼ PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP, WLCSP 24XX64/65 64 Kbits (x8) 1 MHz 1.7V-5.5V -40°C to +125ºC 1M/10M 200 years W, ¼ PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP, WLCSP 24XX128 128 Kbits (x8) 1 MHz 1.7V-5.5V -40°C to +125ºC 1M 200 years Yes PDIP, SOIC, TSSOP, 2x3 T-DFN, 6x5 DFN, MSOP, WLCSP 24XX256 256 Kbits (x8) 1 MHz 1.7V-5.5V -40°C to +125ºC 1M 200 years Yes PDIP, SOIC, TSSOP, 6x5 DFN, MSOP, WLCSP 24XX512 512 Kbits (x8) 1 MHz 1.7V-5.5V -40°C to +125ºC 1M 200 years Yes PDIP, SOIC, TSSOP, 6x5 DFN, WLCSP 24XX1025 1 Mbit (x8) 1 MHz 1.7V-5.5V -40°C to +125ºC 1M 200 years Yes PDIP, SOIC, SOIJ, 6x5 DFN UNI/O® Bus Memory Products Device Density (Organization) Max Clock Frequency Operating Voltage (AA, LC) Temperature (I, E) Endurance (E/W Cycles) Data Retention Write Protect (Software) Max Standby Current Packages 11XX010 1 Kbit (x8) 100 kHz 1.8V-5.5V -40°C to +125ºC 1M 200 years W, ½, ¼ 1 μA PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP 11XX020 2 Kbits (x8) 100 kHz 1.8V-5.5V -40°C to +125ºC 1M 200 years W, ½, ¼ 1 μA PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP 11XX040 4 Kbits (x8) 100 kHz 1.8V-5.5V -40°C to +125ºC 1M 200 years W, ½, ¼ 1 μA PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP 11XX080 8 Kbits (x8) 100 kHz 1.8V-5.5V -40°C to +125ºC 1M 200 years W, ½, ¼ 1 μA PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP 11XX160 16 Kbits (x8) 100 kHz 1.8V-5.5V -40°C to +125ºC 1M 200 years W, ½, ¼ 1 μA PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP Packages Microwire Memory Products Density (x8 or x16) Max Clock Frequency Operating Voltage (AA, LC, C) Temperature (I, E) Endurance (E/W Cycles) Data Retention Write Protect (Hardware) Read Current 93XX46A/B/C 1 Kbit 3 MHz 1.8V-5.5V -40°C to +125ºC 1M 200 years No 1 mA PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP 93XX56A/B/C 2 Kbits 3 MHz 1.8V-5.5V -40°C to +125ºC 1M 200 years No 1 mA PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP 93XX66A/B/C 4 Kbits 3 MHz 1.8V-5.5V -40°C to +125ºC 1M 200 years No 1 mA PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP 93XX76A/B/C 8 Kbits 3 MHz 1.8V-5.5V -40°C to +125ºC 1M 200 years Yes 1 mA PDIP, SOIC, TSSOP, 2x3 T-DFN, MSOP 93XX86A/B/C 16 Kbits 3 MHz 1.8V-5.5V -40°C to +125ºC 1M 200 years Yes 1 mA PDIP, SOIC, TSSOP, 2x3 T-DFN, MSOP Device A: x8 Organization, B: x16 Organization, C: Selectable x8 or x16 Organization SPI Memory Products Device Density (Organization) Max Clock Frequency Operating Voltage (AA, LC) Temperature (I, E, H) Endurance (E/W Cycles) Data Retention Write Protect (Software) Packages 25XX010A 1 Kbit (x8) 10 MHz 1.8V-5.5V -40°C to +150ºC 1M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, 2x3 T-DFN, MSOP, SOT-23 25XX020A 2 Kbits (x8) 10 MHz 1.8V-5.5V -40°C to +150ºC 1M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, 2x3 T-DFN, MSOP, SOT-23 25XX040A 4 Kbits (x8) 10 MHz 1.8V-5.5V -40°C to +150ºC 1M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, 2x3 T-DFN, MSOP, SOT-23 25XX080C/D 8 Kbits (x8) 10 MHz 1.8V-5.5V -40°C to +150ºC 1M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, MSOP, 2x3 T-DFN 25XX160C/D 16 Kbits (x8) 10 MHz 1.8V-5.5V -40°C to +150ºC 1M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, MSOP, 2x3 T-DFN 25XX320A 32 Kbits (x8) 10 MHz 1.8V-5.5V -40°C to +150ºC 1M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, MSOP, 2x3 T-DFN 25XX640A 64 Kbits (x8) 10 MHz 1.8V-5.5V -40°C to +150ºC 1M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, MSOP, 2x3 T-DFN 25XX128 128 Kbits (x8) 10 MHz 1.8V-5.5V -40°C to +150ºC 1M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, 6x5 DFN 25XX256 256 Kbits (x8) 10 MHz 1.8V-5.5V -40°C to +150ºC 1M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, 6x5 DFN 25XX512 512 Kbits (x8) 20 MHz 1.8V-5.5V -40°C to +125ºC 1M 200 years W, ½, ¼ PDIP, SOIC, 6x5 DFN 25XX1024 1 Mbit (x8) 20 MHz 1.8V-5.5V -40°C to +125ºC 1M 200 years W, ½, ¼ PDIP, SOIJ, 6x5 DFN 1. Voltage Range: AA = 1.7- 5.5V; LC = 2.5-5.5V; C = 4.5-5.5V 2. I = -40ºC to 85ºC; E = -40ºC to 125ºC; H = -40ºC to 150ºC 3. Pb-Free, Halogen Free and RoHS Compliant 4. Write Protect: W = Whole Array, ½ = Half Array, ¼ = Quarter Array 5. ESD protection > 4 kV (HBM); > 400V (MM) on all pins 6. H Temp is SOIC only SRAM Memory Products Device Density (Organization) Max Clock Frequency Operating Voltage (A, K) Temperature (I, E) Read Current (mA) Max Standby Current Packages 23x640 8KB (64 Kbits) 20 MHz 1.8V, 3V -40°C to +125ºC 3 mA 4 μA PDIP, SOIC, TSSOP 23X256 32 KB (256 Kbits) 20 MHz 1.8V, 3V -40°C to +125ºC 3 mA 4 μA PDIP, SOIC, TSSOP 1. Voltage Range: A = 1.5- 1.95V; K = 2.7V-3.6V 2. All Devices are Pb-Free, RoHS Compliant and Halogen Free For up to date product information visit: www.microchip.com/memory Support Training Microchip is committed to supporting its customers in developing products faster and more efficiently. We maintain a worldwide network of field applications engineers and technical support ready to provide product and system assistance. In addition, the following service areas are available at www.microchip.com: ■ Support link provides a way to get questions answered fast: http://support.microchip.com ■ Sample link offers evaluation samples of any Microchip device: http://sample.microchip.com ■ Forum link provides access to knowledge base and peer help: http://forum.microchip.com ■ Buy link provides locations of Microchip Sales Channel Partners: www.microchip.com/sales If additional training interests you, then Microchip can help. 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Total Endurance is a trademark of Microchip Technology Incorporated in the U.S.A. and other countries. All other trademarks mentioned herein are property of their respective companies. © 2009, Microchip Technology Incorporated, All Rights Reserved. Printed in the U.S.A. 9/09 DS22078C *DS22078D* www.microchip.com Microchip Technology Inc. 2355 W. Chandler Blvd. Chandler, AZ 85224-6199