Power Transistors 2SD2465, 2SD2465A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1603 Unit: mm ■ Features Parameter (TC=25˚C) Symbol Collector to 2SD2465 base voltage 2SD2465A Collector to 2SD2465 Ratings 40 VCBO Unit V 50 20 VCEO emitter voltage 2SD2465A VEBO 5 V Peak collector current ICP 8 A Collector current IC 4 A dissipation 25 PC Ta=25°C Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics 150 ˚C –55 to +150 ˚C Symbol 2SD2465 current 2SD2465A 3.0±0.2 2.54±0.2 5.08±0.4 7° 1 2 3 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package (TC=25˚C) Parameter Collector cutoff 2.6±0.1 0.7±0.1 0.75±0.1 W 2 2.9±0.2 1.2±0.15 1.45±0.15 V 40 Emitter to base voltage Collector power TC=25°C 15.0±0.3 ■ Absolute Maximum Ratings 9.9±0.3 4.1±0.2 8.0±0.2 Solder Dip ● φ3.2±0.1 +0.5 ● 4.6±0.2 Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package superior in insulation, which can be installed to the heat sink with one screw 13.7–0.2 ● Conditions min typ max Unit VCB = 40V, IE = 0 50 VCB = 50V, IE = 0 50 IEBO VEB = 5V, IC = 0 50 VCEO IC = 10mA, IB = 0 hFE1 VCE = 2V, IC = 0.1A 45 hFE2* VCE = 2V, IC = 1A 90 Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 0.1A 0.5 V Base to emitter saturation voltage VBE(sat) IC = 2A, IB = 0.1A 1.5 V Transition frequency fT VCE = 5V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf Emitter cutoff current Collector to emitter 2SD2465 voltage 2SD2465A Forward current transfer ratio *h FE2 ICBO IC = 2A, IB1 = 0.2A, IB2 = – 0.2A, VCC = 20V 20 µA µA V 40 260 120 MHz 0.2 µs 0.5 µs 0.1 µs Rank classification Rank Q P hFE2 90 to 180 130 to 260 1 Power Transistors 2SD2465, 2SD2465A IC — VCE 30 (1) 25 TC=25˚C 5 Collector current IC (A) 20 15 (2) 10 40mA 4 30mA 3 20mA 2 10mA 1 (3) 5 IB=60mA 50mA 5mA (4) 0 0 25 50 75 100 125 150 0 Ambient temperature Ta (˚C) 2 4 VBE(sat) — IC 10 12 25˚C TC=–25˚C 100˚C 0.1 0.03 0.3 3000 1 3 TC=100˚C 300 25˚C 100 –25˚C 30 10 3 0.3 1 3 10 30 100 Area of safe operation (ASO) Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=20V TC=25˚C Non repetitive pulse TC=25˚C ton tf 0.1 10 ICP t=1ms IC 3 10ms 1 DC 0.3 0.1 2SD2465 Collector current IC (A) 30 tstg 0.03 0.03 0.01 0.01 1 2 3 4 5 6 7 Collector current IC (A) 0.1 0.3 1 8 3 10 VCE=5V f=10MHz TC=25˚C 300 100 30 10 1 3 10 30 100 300 1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 100 0 0.01 0.01 0.03 3 Collector current IC (A) ton, tstg, tf — IC 0.3 0.03 1000 1 0.1 10 10 1 –25˚C 0.1 3000 Collector current IC (A) 3 TC=100˚C 25˚C 0.3 Collector current IC (A) Transition frequency fT (MHz) 3 0.1 1 fT — IC 1000 0.01 0.01 0.03 3 VCE=2V 10 0.3 10 10000 IC/IB=10 30 1 IC/IB=10 30 hFE — IC 10000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 8 100 Collector to emitter voltage VCE (V) 100 Switching time ton,tstg,tf (µs) 6 2SD2465A Collector power dissipation PC (W) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2.0W) 35 0 2 VCE(sat) — IC 6 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 40 1000 Collector to emitter voltage VCE (V) 10 Power Transistors 2SD2465, 2SD2465A Rth(t) — t Thermal resistance Rth(t) (˚C/W) 102 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3