AON7230 100V N-Channel MOSFET General Description Product Summary • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Logic level driven VDS Applications ID (at VGS=10V) 100V 47A RDS(ON) (at VGS=10V) < 11.5mΩ RDS(ON) (at VGS=4.5V) < 15.5mΩ 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • Synchronous Rectification in cell phone Quick Charger DFN 3.3x3.3 Top View D Bottom View Top View Pin 1 1 8 2 7 3 6 4 5 G S Pin 1 Orderable Part Number Package Type Form Minimum Order Quantity AON7230 DFN 3.3x3.3 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy VDS Spike Power Dissipation B L=0.1mH C 10µs TC=25°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: October 2015 IAS 33 A EAS 54 mJ VSPIKE 120 V 54 Steady-State Steady-State W 21 4.1 RθJA RθJC W 2.6 TJ, TSTG Symbol t ≤ 10s A 10 PDSM TA=70°C A 13 PD TC=100°C V 125 IDSM TA=70°C ±20 30 IDM TA=25°C Continuous Drain Current Units V 47 ID TC=100°C Maximum 100 -55 to 150 Typ 25 50 1.8 www.aosmd.com Max 30 60 2.3 °C Units °C/W °C/W °C/W Page 1 of 6 AON7230 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C 1.5 ±100 nA 1.95 2.5 V 9.5 11.5 18 22 15.5 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=11A 12 gFS Forward Transconductance VDS=5V, ID=13A 55 VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz f=1MHz µA 5 VGS=10V, ID=13A Coss Units V VDS=100V, VGS=0V IDSS Max mΩ S 1 V 47 A 2320 pF 175 pF 11 pF 1.4 2.1 Ω SWITCHING PARAMETERS Total Gate Charge Qg(10V) 30 45 nC Qg(4.5V) Total Gate Charge 13 21 Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=50V, ID=13A 0.7 mΩ nC 7 nC Gate Drain Charge 3 nC Turn-On DelayTime 8 ns 4 ns 27 ns VGS=10V, VDS=50V, RL=3.85Ω, RGEN=3Ω 5 ns IF=13A, di/dt=500A/µs 25 Body Diode Reverse Recovery Charge IF=13A, di/dt=500A/µs 120 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: October 2015 www.aosmd.com Page 2 of 6 AON7230 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 10V VDS=5V 4.5V 60 60 3.5V 40 ID (A) ID (A) 80 4V 40 125°C 20 20 25°C VGS=3V 0 0 0 1 2 3 4 1 5 3 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 16 2.4 2.2 Normalized On-Resistance 14 VGS=4.5V RDS(ON) (mΩ) 2 12 10 8 VGS=10V 6 2 VGS=10V ID=13A 1.8 1.6 1.4 1.2 VGS=4.5V ID=11A 1 0.8 4 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 30 1.0E+01 ID=13A 25 1.0E+00 20 1.0E-01 IS (A) RDS(ON) (mΩ) 125°C 15 10 125°C 1.0E-02 25°C 1.0E-03 25°C 5 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: October 2015 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7230 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3000 VDS=50V ID=13A Capacitance (pF) VGS (Volts) Ciss 2500 8 6 4 2 2000 1500 1000 500 Coss Crss 0 0 0 5 10 15 20 25 30 35 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10µs 100 100µs 1ms 10ms 1.0 300 200 DC TJ(Max)=150°C TC=25°C 0.0 0.01 TJ(Max)=150°C TC=25°C 400 Power (W) ID (Amps) 80 10µs RDS(ON) limited 0.1 ZθJC Normalized Transient Thermal Resistance 60 500 100.0 10 40 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 10.0 20 100 0.1 1 10 100 1000 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=2.3°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: October 2015 www.aosmd.com Page 4 of 6 AON7230 Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 50 50 Current rating ID (A) 40 30 20 10 40 30 20 10 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: October 2015 www.aosmd.com Page 5 of 6 AON7230 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: October 2015 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6